IXYS CMA30E1600PN Single thyristor Datasheet

CMA30E1600PN
Thyristor
VRRM
=
1600 V
I TAV
=
23 A
VT
=
1.42 V
Single Thyristor
Part number
CMA30E1600PN
Backside: Isolated
2
1
3
Features / Advantages:
Applications:
Package: TO-220FP
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121c
CMA30E1600PN
Ratings
Thyristor
Conditions
Symbol
V RSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
max.
1700
Unit
V
V RRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1600
V
I R/D
reverse current, drain current
VR/D = 1600 V
TVJ = 25°C
10
µA
VR/D = 1600 V
TVJ = 125°C
2
mA
TVJ = 25°C
1.42
V
1.80
V
1.42
V
VT
IT =
forward voltage drop
30 A
IT =
60 A
IT =
30 A
IT =
60 A
I TAV
average forward current
TC = 40°C
180° sine
I T(RMS)
RMS forward current
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
total power dissipation
I TSM
max. forward surge current
value for fusing
typ.
TVJ = 125 °C
for power loss calculation only
Ptot
I²t
min.
1.92
V
T VJ = 150 °C
23
A
36
A
TVJ = 150 °C
0.90
V
50
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
260
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
280
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
220
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
240
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
340
A²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
325
A²s
TVJ = 150 °C
240
A²s
240
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 150 °C
9
t P = 300 µs
average gate power dissipation
critical rate of rise of current
K/W
0.50
junction capacitance
(di/dt) cr
mΩ
K/W
TC = 25°C
CJ
PGAV
17
2.5
TVJ = 125°C; f = 50 Hz
repetitive, IT =
90 A
non-repet., IT =
30 A
pF
10
W
5
W
0.5
W
150 A/µs
t P = 200 µs; di G /dt = 0.2 A/µs;
IG =
(dv/dt) cr
critical rate of rise of voltage
VGT
gate trigger voltage
I GT
gate trigger current
0.2 A; VD = ⅔ VDRM
500 A/µs
TVJ = 125°C
500 V/µs
VD = 6 V
TVJ = 25 °C
1.3
TVJ = -40 °C
1.6
V
VD = 6 V
TVJ = 25 °C
28
mA
TVJ = -40 °C
50
mA
TVJ = 125 °C
0.2
V
1
mA
TVJ = 25 °C
90
mA
VD = ⅔ VDRM
R GK = ∞; method 1 (linear voltage rise)
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
VD = ⅔ VDRM
t p = 10 µs
IG =
0.2 A; di G /dt =
V
0.2 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
80
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG =
0.5 A; di G /dt =
0.5 A/µs
VR = 100 V; I T = 30 A; VD = ⅔ VDRM TVJ = 150 °C
di/dt = 10 A/µs; dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
150
µs
20 V/µs; t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121c
CMA30E1600PN
Package
Ratings
TO-220FP
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
Tstg
storage temperature
T VJ
virtual junction temperature
min.
typ.
max.
35
Unit
A
-55
150
°C
-40
150
°C
Weight
2
MD
mounting torque
FC
mounting force with clip
d Spp/App
d Spb/Apb
VISOL
Product Marking
Part Number
Logo
DateCode
Assembly Code
0.6
20
60
Nm
N
1.6
1.0
mm
terminal to backside
2.5
2.5
mm
2500
V
2080
V
t = 1 second
t = 1 minute
0.4
terminal to terminal
creepage distance on surface | striking distance through air
isolation voltage
g
50/60 Hz, RMS; IISOL ≤ 1 mA
Part number
C
M
A
30
E
1600
PN
abcdef
=
=
=
=
=
=
=
Thyristor (SCR)
Thyristor
(up to 1800V)
Current Rating [A]
Single Thyristor
Reverse Voltage [V]
TO-220ABFP (3)
YYWW Z
XXXXXX
Assembly Line
Ordering
Standard
Part Number
CMA30E1600PN
Similar Part
CMA30E1600PB
CS22-12io1M
CLA30E1200PB
CLA30E1200PC
CLA30E1200HB
CS22-08io1M
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
CMA30E1600PN
Package
TO-220AB (3)
TO-220ABFP (3)
TO-220AB (3)
TO-263AB (D2Pak) (2)
TO-247AD (3)
TO-220ABFP (3)
* on die level
Delivery Mode
Tube
Code No.
505254
Voltage class
1600
1200
1200
1200
1200
800
T VJ = 150°C
Thyristor
V 0 max
threshold voltage
0.9
V
R 0 max
slope resistance *
14
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
50
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121c
CMA30E1600PN
Outlines TO-220FP
E
A
ØP
A1
Q
H
Dim.
D
A
A1
A2
b
c
D
E
e
H
L
L1
ØP
Q
1 2 3
L1
A2
L
b1
c
b
e
2
Millimeters
min
max
4.50
4.90
2.34
2.74
2.56
2.96
0.70
0.90
0.45
0.60
15.67 16.07
9.96 10.36
2.54 BSC
6.48
6.88
12.68 13.28
3.03
3.43
3.08
3.28
3.20
3.40
Inches
min
max
0.177 0.193
0.092 0.108
0.101 0.117
0.028 0.035
0.018 0.024
0.617 0.633
0.392 0.408
0.100 BSC
0.255 0.271
0.499 0.523
0.119 0.135
0.121 0.129
0.126 0.134
1
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121c
CMA30E1600PN
Thyristor
250
60
1000
VR = 0 V
50 Hz, 80% VRRM
50
TVJ = 45°C
200
40
IT
ITSM
2
It
30
[A]
TVJ = 45°C
[A]
20
2
[A s]
150
TVJ =
125°C
10
TVJ = 125°C
150°C
0
0.5
TVJ = 25°C
1.0
100
1.5
10
2.0
0.01
0.1
VT [V]
1
IGD: TVJ = -40°C
IGD: TVJ = 0°C
IGD: TVJ = 25°C
[V]
Fig. 3 I t versus time (1-10 s)
tgd
ITAVM
[μs]
[A]
20
lim.
100
10
typ.
50
-2
75
10-1
100
0
101
0
40
IG [A]
IG [mA]
Fig. 4 Gate voltage & gate current
Fig. 5 Gate controlled delay time tgd
dc =
1
0.5
0.4
0.33
0.17
0.08
P(AV)
i Rthi (K/W)
1
0.1
2
0.06
3
0.2
4
0.35
5
1.79
2.5
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
80
120
160
Tcase [°C]
Triggering: A = no; B = possible; C = safe
30
dc =
1
0.5
0.4
0.33
0.17
0.08
30
TVJ = 125°C
10-1
40
4 5 6 7 8 910
t [ms]
IGD: TVJ = 25°C
25
3
40
101
0
0
2
2
102
3
2
1
Fig. 2 Surge overload current
ITSM: crest value, t: duration
IGD: TVJ = 125°C
VG
1
t [s]
Fig. 1 Forward characteristics
4
TVJ = 125°C
100
2.0
1.5
Fig. 6 Max. forward current at
case temperature
ti (s)
0.01
0.0001
0.02
0.4
0.15
ZthJC
20
[W]
1.0
[K/W]
10
0.5
0
0.0
0
10
20
30
IF(AV) [A]
0
50
100
150
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Tamb [°C]
Fig. 7 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20130121c
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