UTC DTC143E Npn digital transistor (built-in resistors) Datasheet

UNISONIC TECHNOLOGIES CO.,
DTC143E
NPN EPITAXIAL SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
FEATURES
1
2
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input
resistors (see the equivalent circuit).
*The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input
They also have the advantage of almost completely
eliminating parasitic effects.
*Only the on / off conditions need to be set for operation,
making device design easy.
EQUIVALENT CIRCUIT
*Pb-free plating product number:DTC143EL
CE3
R2
PIN CONFIGURATION
PIN NO.
PIN NAME
1
GND
2
IN
3
OUT
GND
IN
SOT-323
MARKING
OUT
R1
IN
3
OUT
GND
ORDERING INFORMATION
Order Number
Normal
Lead free
DTC143E-AL3-R DTC143EL-AL3-R
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
Package
Packing
SOT-323
Tape Reel
1
QW-R220-015.A
DTC143E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCC
VIN
IC
PD
TJ
TSTG
RATINGS
50
-10 ~ +30
100
200
150
-40 ~ +150
UNIT
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
VI(off)
Input Voltage
VI(ON)
Output Voltage
VO(ON)
Input Current
II
Output Current
IO(off)
DC Current Gain
GI
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
*Transition frequency of the device
TEST CONDITIONS
VCC= 5V, IO=100μA
VO= 0.3V, IO= 20mA
IO/II= 10mA / 0.5 mA
VI= 5V
VCC= 50V , VI=0V
VO= 5V, IO= 10mA
VCE= 10 V, IE= -5mA, f=100MHz *
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
0.5
UNIT
0.1
0.3
1.8
0.5
V
mA
μA
4.7
1
250
6.11
1.2
kΩ
3
20
3.29
0.8
V
MHz
2
QW-R220-015.A
DTC143E
TYPICAL CHARACTERICS
Fig.1 Input voltage vs.output current
(ON characterristics)
100
Fig.2 Output current vs Input voltage
(OFF characterristics)
10m
Vo=0.3V
5m
50
20
Output Current :Io (A)
Input Voltage :VI(ON)
(V)
2m
10
Ta=-40℃
25℃
100℃
5
2
1
1m
Vcc=5V
Ta=100℃
25℃
-40℃
500μ
200μ
100μ
50μ
20μ
10μ
500m
5μ
200m
2μ
100m
100μ 200μ
500μ 1m
2m
5m
10m 20m
1μ
0
50m 100m
0.5
Output Current :Io (A)
1
Vo=5V
Ta=100℃
25℃
-40℃
50
20
10
5
3.0
Io/II=20
Ta=100℃
25℃
-40℃
200m
100m
50m
20m
2
1
100μ 200μ
2.5
500m
Output Voltage :VO(ON) V
100
2.0
1.5
Fig.4 Output voltage vs. output current
500
200
-1.0
INPUT VOLTAGE: Vi(off) (V)
Fig.3 DC current gain vs.output current
1K
DC Current Gain: GI
■
NPN EPITAXIAL SILICON TRANSISTOR
10m
5m
2m
500μ 1m
2m
5m
10m 20m
50m 100m
Output Current :Io(A)
1m
100μ 200μ
500μ 1m
2m
5m
10m 20m
50m 100m
Output Current :Io (A)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R220-015.A
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