CHENDA ES5ABF Surface mount superfast recovery rectifier Datasheet

ES5ABF THRU ES5JBF
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts
SMBF
FEATURES
Cathode Band
Top View
0.146(3.70)
0.138(3.50)
Forward Current - 5.0 Amperes
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Superfast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU diretives
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.043(1.10)
MECHANICAL DATA
0.051(1.30)
0.039(1.0)
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=100 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=125 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
VRRM
VRMS
VDC
ES5ABF
ES5BBF
ES5DBF
ES5GBF
ES5JBF
E5AB
E5BB
E5DB
E5GB
E5JB
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
I(AV)
IFSM
VF
IR
trr
CJ
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range TJ,TSTG
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
150
135
1.25
10.0
100.0
35
95
45
-55 to +150
VOLTS
VOLTS
VOLTS
Amps
5.0
1.0
UNITS
Amps
1.7
Volts
µA
ns
pF
C/W
C
RATINGS AND CHARACTERISTIC CURVES ES5ABF THRU ES5JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t rr
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
OSCILLOSCOPE
Note 1
NonInductive
-1.0
Note:1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
6
300
5
100
I R- Reverse Current ( μ A)
Average Forward Current (A)
Fig.2 Maximum Average Forward Current Rating
4
3
2
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7×12.7mm ) pad areas.
1
T J =125°C
10
T J =75°C
1.0
T J =25°C
0.1
0
25
50
75
100
125
150
175
0
100
Fig.5 Typical Junction Capacitance
150
10
T J =25°C
Junction Capacitance ( pF)
Instaneous Forward Current (A)
80
60
% of PIV.VOLTS
Fig.4 Typical Forward Characteristics
1.0
ES5ABF~ES5DBF
ES5EBF/ ES5GBF
0.1
ES5JBF
0.01
0.001
0
0.5
1.5
1.0
2.0
2.5
125
100
75
50
T J =25°C
f = 1.0MHz
V sig = 50mV p-p
25
0.1
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
175
ES5ABF~ES5DBF
150
ES5EBF/ ES5JBF
125
100
75
50
25
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
1
10
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Peak Forward Surage Current (A)
40
20
Lead Temperature (°C)
100
Number of Cycles
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
100
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