Toshiba CMS17 Toshiba schottky barrier diode Datasheet

CMS17
TOSHIBA Schottky Barrier Diode
CMS17
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
•
•
•
•
Unit: mm
Forward voltage: VFM = 0.48 V (max)
Average forward current: IF (AV) = 2.0 A
Repetitive peak reverse voltage: VRRM = 30 V
Suitable for compact assembly due to a small surface-mount package:
“M−FLATTM” (Toshiba package name)”
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Repetitive peak reverse voltage
VRRM
Average forward current
IF (AV)
Nonrepetitive peak surge current
Junction temperature
Storage temperature range
Rating
Unit
30
V
2.0 (Note 1)
A
IFSM
30 (50 Hz)
A
Tj
−40~150
°C
Tstg
−40~150
°C
Note 1: Ta = 77°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
Soldering size: 2 mm × 2 mm
Board thickness: 0.64 t
Rectangular waveform (α = 180°), VR = 15 V
JEDEC
⎯
JEITA
⎯
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Peak forward voltage
Peak repetitive reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
Test Condition
Min
Typ.
Max
VFM (1)
IFM = 1.0 A (pulse test)
⎯
0.42
⎯
VFM (2)
IFM = 2.0 A (pulse test)
⎯
0.45
0.48
IRRM (1)
VRRM = 5 V (pulse test)
⎯
0.8
⎯
IRRM (2)
VRRM = 30 V (pulse test)
⎯
10
100
VR = 10 V, f = 1.0 MHz
⎯
90
⎯
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 t)
⎯
⎯
60
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 t)
⎯
⎯
135
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 t)
⎯
⎯
210
⎯
⎯
16
Cj
Rth (j-a)
⎯
Rth (j-ℓ)
Unit
V
μA
pF
°C/W
°C/W
Start of commercial production
1
2004-09
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CMS17
Marking
Abbreviation Code
Part No.
SG
CMS17
Standard Soldering Pad
2.1
Unit: mm
1.4
3.0
1.4
Handling Precaution
1)
Schottky barrier diodes have reverse current characteristics compared to other diodes. SBDs can cause thermal
runaway when used under high temperature or high voltage conditions. Be sure to take forward and reverse
loss into consideration during design.
2)
The absolute maximum ratings denote the absolute maximum ratings, which are rated values that must not be
exceeded during operation, even for an instant. The following are the general derating methods that we
recommend for designing a circuit incorporating this device.
VRRM: Use this rating with reference to (1) above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account when designing a device for operation at low
temperature.
IF (AV): We recommend that the worst case current be no greater than 80% of the absolute maximum
rating of
IF (AV) and that Tj be below 120°C. When using this device, take the margin into consideration by
using an allowable Tamax-IF (AV) curve.
IFSM: This rating specifies the nonrepetitive peak current. This is applied only for abnormal operation,
which seldom occurs during the lifespan of the device.
Tj:
Derate this rating when using the device to ensure high reliability.
We recommend that the device be used at a Tj of below 120°C.
3)
Thermal resistance between junction and ambient fluctuates depending on the mounting condition of the
device. When using the device, design the circuit board and soldering land size to match the appropriate
thermal resistance value.
4)
Refer to the Rectifiers databook for further information.
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iF – vF
PF (AV) – IF (AV)
1.2
Pulse test
DC
Average forward power dissipation
PF (AV) (W)
Instantaneous forward current
iF (A)
10
3
Tj = 150°C
125°C
1
25°C
75°C
0.3
0.1
0.03
1.0
180°
120°
0.8
α = 60°
0.6
Rectangular
waveform
0.4
0° α 360°
0.2
Conduction angle α
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
Instantaneous forward voltage
0.7
vF
0
0.0
0.8
0.4
(V)
0.8
Maximum allowable lead temperature
Tℓ max (°C)
α = 60°
80
Rectangular
waveform
120°
180°
DC
60
40
0° α 360°
IF (AV)
20 Conduction
angle α
VR = 15 V
0
0.0
0.4
0.8
1.2
1.6
Average forward current
2.0
2.4
IF (AV)
2.8
3.2
(A)
Tℓ max – IF (AV)
100
2.4
IF (AV)
2.8
140
120
100
80
α = 60°
Rectangular
waveform
180°
120°
DC
60
40
0° α 360°
IF (AV)
20 Conduction
angle α
VR = 15 V
0
0.0
0.4
0.8
3.2
(A)
1.2
1.6
2.0
Average forward current
2.4
IF (AV)
2.8
3.2
(A)
rth (j-a) – t
1000
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 2.1 mm × 1.4 mm
board thickness: 1.6 t
500
Transient thermal impedance
rth (j-a) (°C/W)
Maximum allowable temperature
Ta max (°C)
120
2.0
160
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
soldering land:
2 mm × 2 mm
board thickness:
0.64 t
140
1.6
Average forward current
Ta max – IF (AV)
160
1.2
300
100
50
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 t
30
10
5
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: 2.0 mm × 2.0 mm
board thickness: 0.64 t
3
1
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
30
100
300
1000
Time t (s)
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Surge forward current
C j – VR
Ta = 25°C
Cj (pF)
Ta = 25°C
f = 50 Hz
30
20
10
0
1
3
5
10
30
50
f = 1 MHz
500
300
100
50
30
10
1
100
3
5
IR – Tj
(typ.)
0.8
Average reverse power dissipation
PR (AV) (W)
10
(mA)
VR = 30 V
1
20 V
10 V
5V
3V
0.001
0.0001
0
20
40
60
80
100
Junction temperature Tj
120
140
VR
0.7
(°C)
0.5
0.4
VR
(V)
(typ.)
DC
α
300°
Conduction angle α
Tj = 150°C
240°
180°
0.3
120°
60°
0.2
0.1
4
8
12
16
Reverse voltage
4
100
0.6
0
0
160
50
Rectangular
waveform
0°
360°
Pulse test
0.01
30
PR (AV) – VR
100
0.1
10
Reverse voltage
Number of cycles
Reverse current IR
(typ.)
1000
Junction capacitance
Peak surge forward current
IFSM
(A)
(nonrepetitive)
40
20
VR
24
28
(V)
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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