DATA SHEET 2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature UNITS VCBO VCEO VEBO IC PD PD 25 15 5.0 100 0.5 1.2 TJ,Tstg -65 to +200 ΘJA ΘJC Thermal Resistance Thermal Resistance V V V mA W W °C 350 °C/W 146 °C/W ELECTRICAL CHARACTERISTICS: 2N2411 MIN MAX SYMBOL TEST CONDITIONS ICES ICES IEBO VCE=15V VCE=15V, TA=150°C VEB=5.0V BVCBO BVCEO VCE(SAT) VBE(SAT) hFE hFE hFE hFE hfe Cob Cib IC=10µA IC=10mA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=0.5V, IC=50µA VCE=0.5V, IC=10mA VCE=0.5V, IC=10mA, TA=-55°C VCE=1.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz UNITS 10 10 nA 10 10 10 µA µA 0.2 0.9 V V V V 25 15 0.7 10 20 2N2412 MIN MAX 25 15 0.2 0.9 60 10 10 1.4 0.7 20 40 120 20 20 1.4 5.0 8.0 5.0 8.0 pF pF (CONTINUED ON REVERSE SIDE) R0 2N2411 / 2N2412 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) SYMBOL 2N2411 MIN MAX TEST CONDITIONS td tr ton VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω ts tf toff 2N2412 MIN MAX UNITS 10 10 ns 20 20 ns 25 25 ns IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω 90 90 ns 20 20 ns IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω 100 100 ns JEDEC TO-18 CASE - MECHANICAL OUTLINE A B D SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J C E F LEAD #2 LEAD #1 I 45° G H LEAD #3 J R1 Lead Code: 1) Emitter 2) Base 3) Collector DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.030 0.76 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.019 0.41 0.48 0.100 2.54 0.050 1.27 0.036 0.046 0.91 1.17 0.028 0.048 0.71 1.22 TO-18 (REV: R1)