D44C SERIES w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCES VCEO D44C1 D44C4 D44C2 D44C5 D44C3 D44C6 40 55 30 D44C7 D44C10 D44C8 D44C11 D44C9 D44C12 UNITS 70 90 V 45 60 80 V VEBO IC 5.0 V 4.0 A ICM PD 6.0 A 30 W TJ, Tstg ΘJC -65 to +150 °C Thermal Resistance 4.2 °C/W Thermal Resistance ΘJA 75 °C/W Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=Rated VCES IEBO VEB=5.0V MAX 10 UNITS μA 100 μA BVCEO BVCEO IC=100mA (D44C1, 2, 3) IC=100mA (D44C4, 5, 6) 30 V 45 V BVCEO BVCEO IC=100mA (D44C7, 8, 9) IC=100mA (D44C10, 11, 12) 60 V 80 V VCE(SAT) IC=1.0A, IB=50mA (D44C2, 3, 5, 6, 8, 9, 11, 12) 0.5 V VCE(SAT) VBE(SAT) IC=1.0A, IB=100mA (D44C1, 4, 7, 10) IC=1.0A, IB=100mA 0.5 V 1.3 V Cob fT VCB=10V, IE=0, f=1.0MHz VCE=4.0V, IC=20mA 100 pF 50 MHz td+tr ts IC=1.0A, IB1=100mA IC=1.0A, IB1=IB2=100mA 100 ns 500 ns tf IC=1.0A, IB1=IB2=100mA 75 ns R1 (4-March 2014) D44C SERIES SILICON NPN POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) D44C3 D44C2 D44C1 D44C6 D44C5 D44C4 D44C9 D44C8 D44C7 D44C12 D44C11 D44C10 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX hFE VCE=1.0V, IC=0.2A 40 120 100 220 25 hFE VCE=1.0V, IC=2.0A 20 20 hFE VCE=1.0V, IC=1.0A 10 - TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (4-March 2014) w w w. c e n t r a l s e m i . c o m