1.6X0.8mm PHOTOTRANSISTOR AP1608P1C Features Description 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. Made with NPN silicon phototransistor chips. MECHANICALLY AND SPECTRALLY MATCHED TO THE AP1608 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL . RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3.Specifications are subject to change without notice. SPEC NO: DSAD1363 REV NO: V.4 DATE: AUG/13/2005 PAGE: 1 OF 4 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: W.J.ZHU ERP: 1203000037 Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. Typ. Max. Units Test Conditions VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V IC=100uA Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V IE=100uA Ee=0mW/cm2 VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V IC=2mA Ee=20mW/cm2 Collector Dark Current - - 100 nA VCE=10V Ee=0mW/cm2 TR Rise Time (10％ to 90％ ) - 3 - us TF Fall Time (90％ to 10％ ) - 3 - us 0.1 0.3 - mA VCE = 5V, Ee=1mW/cm2, λ=940nm - 120 - deg - I CEO I (ON) On State Collector Current 2θ1/2 Viewing Angle VCE = 5V IC=1mA RL=1000Ω Absolute Maximum Ratings at TA=25°C Parameter Max.Ratings Collector-to-Emitter Breakdown Voltage 30V Emitter-to-Collector Breakdown Voltage 5V Power Dissipation at (or below) 25°C Free Air Temperature 100mW Operating Temperature Range -40°C ~ +85°C Storage Temperature Range -40°C ~ +85°C SPEC NO: DSAD1363 REV NO: V.4 DATE: AUG/13/2005 PAGE: 2 OF 4 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: W.J.ZHU ERP: 1203000037 AP1608P1C Recommended Soldering Pattern (Units : mm) Tape Specifications (Units : mm) SPEC NO: DSAD1363 REV NO: V.4 DATE: AUG/13/2005 PAGE: 3 OF 4 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: W.J.ZHU ERP: 1203000037 PACKING & LABEL SPECIFICATIONS AP1608P1C SPEC NO: DSAD1363 REV NO: V.4 DATE: AUG/13/2005 PAGE: 4 OF 4 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: W.J.ZHU ERP: 1203000037