Fairchild FJP5021 High speed switching : tf = 0.1î¼s (typ.) Datasheet

FJP5021
FJP5021
High Voltage and High Reliability
• High Speed Switching : tF = 0.1µs (Typ.)
• Wide SOA
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
800
Units
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
2
A
50
W
Junction Temperature
150
°C
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
800
BVCEO
BVEBO
Typ.
Max.
Units
V
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
500
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
7
V
VCEX(sus)
Collector-Emitter Sustaining Voltage
IC = 2.5A, IB1 = -IB2 = 1A
L = 1mH, Clamped
500
V
V
ICBO
Collector Cut-off Current
VCB = 500V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
µA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.6A
VCE = 5V, IC = 3A
15
8
50
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 0.6A
1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 3A, IB = 0.6A
1.5
V
Cob
Output Capacitance
VCB = 10V, IE = 0, f=1MHz
80
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.6A
18
MHz
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
VCC = 200V
IC = 5IB1 = -2.5IB2 = 4A
RL = 50Ω
0.1
0.5
µs
3
µs
0.3
µs
hFE Classification
Classification
R
O
Y
hFE1
15 ~ 30
20 ~ 40
30 ~ 50
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJP5021
Typical Characteristics
100
5
4
IB = 600mA
VCE = 5V
IB = 400mA
IB = 1A
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = 800mA
IB = 1.2A
IB = 200mA
3
IB = 100mA
2
IB = 50mA
1
10
IB = 20mA
IB = 0
0
0
2
4
6
8
1
0.01
10
0.1
VCE [V], COLLECTOR-EMITTER VOLTAGE
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
6
10
IC = 5 IB
VCE = 5V
5
1
IC[A], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
V BE(sat)
0.1
VCE (sat)
0.01
0.01
0.1
1
4
3
2
1
0
0.0
10
0.2
IC[A], COLLECTOR CURRENT
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
0µ
s
IC[A], COLLECTOR CURRENT
50
s
tF
DC
s
tON
0.1
IC(max)
1m
1
50µs
ICP(max)
10
m
10
tON, tSTG, tF [µs], TIME
tSTG
1
0.1
0.01
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
©2003 Fairchild Semiconductor Corporation
10
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Forward Bias Safe Operating Area
Rev. A, May 2003
FJP5021
Typical Characteristics (Continued)
80
Vcc=50V,
IB1 =1A, IB2 = -1A
L = 1mH
10
1
0.1
70
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
100
60
50
40
30
20
10
0
0.01
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
©2003 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A, May 2003
FJP5021
Package Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2
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