IXYS IXGT16N170AH1 High voltage igbt Datasheet

Advance Technical Data
High Voltage
IGBT
IXGH/IXGT 16N170A
VCES
IXGH/IXGT 16N170AH1 IC25
VCE(sat)
tfi(typ)
= 1700 V
=
16 A
= 5.0 V
=
40 ns
H1
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
16
A
IC90
TC = 90°C
8
A
ICM
TC = 25°C, 1 ms
40
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10Ω
Clamped inductive load
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω
10
PC
TC = 25°C
190
W
-55 ... +150
°C
ICM = 40
@ 0.8 VCES
TJ
µs
150
°C
-55 ... +150
°C
TO-247
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Weight
Symbol
= 250 µA, VGE = 0 V
= 250 µA, VCE = VGE
IC
IC
ICES
VCE = 0.8 • VCES
16N170A
VGE = 0 V, Note 1
16N170AH1
TJ = 125°C 16N170A
16N170AH1
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
© 2004 IXYS All rights reserved
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
= IC90, VGE = 15 V
°C
250
TO-247
TO-268
Test Conditions
°C
300
1700
3.0
TJ = 125°C
4.0
4.8
E
C (TAB)
TO-247 AD (IXGH)
G
Tstg
Mounting torque (M3)
G
A
TJM
Md
TO-268 (IXGT)
5.0
V
V
50
100
750
1.5
µA
µA
µA
mA
±100
nA
5.0
V
V
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL 94 V-0
flammability classification
z
SONICTM fast recovery copack diode
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS99235(10/04)
IXGH/IXGT
IXGH/IXGT
Symbol
Test Conditions
gfs
IC = IC25; VCE = 10 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
6
10
S
1700
pF
83
125
pF
pF
Cres
30
pF
Qg
65
nC
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qge
16N170A
16N170AH1
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
tri
IC = IC25, VGE = 15 V
td(off)
RG = 10 Ω, VCE = 0.5 VCES
Note 3
tfi
24
nC
36
ns
57
ns
350
ns
40
150
ns
Inductive load, TJ = 125°°C
IC = IC25, VGE = 15 V
tri
nC
200
Eoff
td(on)
13
0.9
1.5 mJ
38
ns
59
ns
1.5
2.5
200
mJ
mJ
ns
tfi
55
ns
Eoff
1.1
mJ
0.25
0.65 K/W
K/W
RG = 10 Ω, VCE = 0.5 VCES
Note 3
Eon
16N170A
16N170AH1
td(off)
RthJC
RthCK
(TO-247)
Reverse Diode (FRED)
Symbol
Test Conditions
IF = 20 A, VGE = 0 V
IRM
IF = 20 A; -diF/dt = 150 A/µs
t rr
VGE = 0 V; VR = 1200 V
IRM
2.5
2.5
TJ = 125°C
t rr
2.95
V
V
15
A
80
ns
20
A
200
ns
TJ = 125°C
0.9 K/W
RthJC
2.
3.
TO-247 AD Outline
∅P
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
TO-268 Outline
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
Notes: 1.
16N170A
16N170AH1
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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