IDT IDT74LVC125APY 3.3v cmos quadruple bus buffer gate with 3-state outputs and 5 volt tolerant i/o Datasheet

IDT74LVC125A
3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS QUADRUPLE
BUS BUFFER GATE
WITH 3-STATE OUTPUTS
AND 5 VOLT TOLERANT I/O
IDT74LVC125A
DESCRIPTION:
FEATURES:
The LVC125A quadruple bus buffer gate is built using advanced dual
metal CMOS technology. The LVC125A features independent line drivers
with 3-state outputs. Each output is disabled when the associated outputenable (OE) input is high.
To ensure the high impedance state during power up or power down,
OE should be tied to Vcc through a pullup resistor; the minimum value of the
resistor is determined by the current-sinking capability of the driver.
Inputs can be driven from either 3.3V or 5V devices. This feature allows
the use of this device as a translator in a mixed 3.3V/5V system environment.
The LVC125A has been designed with a ±24mA output driver. This
driver is capable of driving a moderate to heavy load while maintaining
speed performance.
• 0.5 MICRON CMOS Technology
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
• VCC = 3.3V ± 0.3V, Normal Range
• VCC = 2.7V to 3.6V, Extended Range
µ W typ. static)
• CMOS power levels (0.4µ
• Rail-to-Rail output swing for increased noise margin
• All inputs, outputs, and I/Os are 5V tolerant
• Supports hot insertion
• Available in SOIC, SSOP, and TSSOP packages
DRIVE FEATURES:
• High Output Drivers: ±24mA
• Reduced system switching noise
APPLICATIONS:
• 5V and 3.3V mixed voltage systems
• Data communication and telecommunication systems
FUNCTIONAL BLOCK DIAGRAM
1OE
1A
2OE
2A
1
2
3OE
3
1Y
3A
4
5
4OE
6
2Y
4A
10
9
8
3Y
13
12
11
4Y
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
FEBRUARY 2000
1
©2000 Integrated Device Technology, Inc.
DSC-4557/1
IDT74LVC125A
3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS
PIN CONFIGURATION
INDUSTRIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
1OE
1
14
VCC
1A
2
13
4OE
1Y
3
12
4A
2OE
4
11
4Y
2A
5
10
3OE
2Y
6
GND
7
9
3A
8
3Y
Description
Max
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to +6.5
V
TSTG
Storage Temperature
–65 to +150
°C
IOUT
DC Output Current
–50 to +50
mA
IIK
IOK
Continuous Clamp Current,
VI < 0 or VO < 0
–50
mA
ICC
ISS
Continuous Current through each
VCC or GND
±100
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
SOIC/ SSOP/ TSSOP
TOP VIEW
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Parameter(1)
Symbol
Conditions
Typ.
Max.
CIN
Input Capacitance
VIN = 0V
4.5
6
pF
COUT
Output Capacitance
VOUT = 0V
5.5
8
pF
CI/O
I/O Port Capacitance
VIN = 0V
6.5
8
pF
NOTE:
1. As applicable to the device type.
PIN DESCRIPTION
Pin Names
xOE
Description
Output-Enable Inputs (Active LOW)
xA
Data Inputs
xY
3-State Outputs
FUNCTION TABLE (EACH BUFFER)(1)
Inputs
Outputs
xOE
xA
xY
L
H
H
L
L
L
H
X
Z
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
Z = High-Impedance
2
Unit
IDT74LVC125A
3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Operating Condition: TA = –40°C to +85°C
Symbol
VIH
VIL
Min.
Typ.(1)
Max.
Unit
VCC = 2.3V to 2.7V
1.7
—
—
V
VCC = 2.7V to 3.6V
2
—
—
VCC = 2.3V to 2.7V
—
—
0.7
VCC = 2.7V to 3.6V
—
—
0.8
Parameter
Input HIGH Voltage Level
Input LOW Voltage Level
Test Conditions
V
Input Leakage Current
VCC = 3.6V
VI = 0 to 5.5V
—
—
±5
µA
IOZH
High Impedance Output Current
VCC = 3.6V
VO = 0 to 5.5V
—
—
±10
µA
IOZL
(3-State Output pins)
IOFF
Input/Output Power Off Leakage
VCC = 0V, VIN or VO ≤ 5.5V
—
—
±50
µA
VIK
Clamp Diode Voltage
VCC = 2.3V, IIN = –18mA
—
–0.7
–1.2
V
VH
ICCL
ICCH
ICCZ
∆ICC
Input Hysteresis
Quiescent Power Supply Current
VCC = 3.3V
VCC = 3.6V, VIN = GND or VCC
—
—
100
—
—
10
mV
µA
Quiescent Power Supply Current
Variation
One input at VCC - 0.6V, other inputs at VCC or GND
—
—
500
µA
IIH
IIL
NOTE:
1. Typical values are at VCC = 3.3V, +25°C ambient.
OUTPUT DRIVE CHARACTERISTICS
Symbol
VOH
Test Conditions(1)
Parameter
Output HIGH Voltage
Unit
—
V
VCC = 2.3V
IOH = – 6mA
2
—
VCC = 2.3V
IOH = – 12mA
1.7
—
2.2
—
VCC = 3V
Output LOW Voltage
Max.
IOH = – 0.1mA
VCC = 2.7V
VOL
Min.
VCC – 0.2
VCC = 2.3V to 3.6V
2.4
—
VCC = 3V
IOH = – 24mA
2.2
—
VCC = 2.3V to 3.6V
IOL = 0.1mA
—
0.2
VCC = 2.3V
IOL = 6mA
—
0.4
IOL = 12mA
—
0.7
VCC = 2.7V
IOL = 12mA
—
0.4
VCC = 3V
IOL = 24mA
—
0.55
V
NOTE:
1. VIH and VIL must be within the min. or max. range shown in the DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE table for the appropriate VCC range.
TA = – 40°C to + 85°C.
3
IDT74LVC125A
3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
OPERATING CHARACTERISTICS, TA = 25°C
Symbol
CPD
VCC = 2.5V±0.2V
VCC = 3.3V±0.3V
Test Conditions
Typical
Typical
Unit
CL = 0pF, f = 10Mhz
11.3
15
pF
Parameter
Power Dissipation Capacitance per gate
SWITCHING CHARACTERISTICS(1)
VCC = 2.5V ± 0.2V
Symbol
Parameter
VCC = 2.7V
VCC = 3.3V ± 0.3V
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tPLH
tPHL
Propagation Delay
xA to xY
1
6.3
—
5.5
1
4.8
ns
tPZH
tPZL
Output Enable Time
xOE to xY
1
7.4
—
6.6
1
5.4
ns
tPHZ
tPLZ
Output Disable Time
xOE to xY
1
5.6
—
5
1
4.6
ns
tSK(o)
Output Skew(2)
—
—
—
—
—
1
ns
NOTES:
1. See TEST CIRCUITS AND WAVEFORMS. TA = – 40°C to + 85°C.
2 Skew between any two outputs of the same package and switching in the same direction.
4
IDT74LVC125A
3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS
TEST CIRCUITS AND WAVEFORMS
VCC(1)= 2.5V±0.2V
VLOAD
VIH
VCC(2)= 3.3V±0.3V & 2.7V
Unit
2 x Vcc
6
V
Vcc
2.7
V
VT
Vcc / 2
1.5
V
VLZ
150
300
mV
VHZ
150
300
mV
CL
30
50
pF
tPHL
tPLH
tPHL
VIH
VT
0V
OPPOSITE PHASE
INPUT TRANSITION
LVC QUAD Link
Propagation Delay
VIN
tPZL
VOUT
D.U.T.
OUTPUT
SWITCH
NORMALLY CLOSED
LOW
tPZH
OUTPUT
SWITCH
NORMALLY
OPEN
HIGH
500Ω
RT
CL
LVC QUAD Link
Test Circuit for All Outputs
VIH
VT
0V
CONTROL
INPUT
GND
500Ω
DISABLE
ENABLE
Open
(1, 2)
tPLH
OUTPUT
VLOAD
VCC
Pulse
Generator
VIH
VT
0V
VOH
VT
VOL
SAME PHASE
INPUT TRANSITION
TEST CONDITIONS
Symbol
INDUSTRIAL TEMPERATURE RANGE
DEFINITIONS:
CL = Load capacitance: includes jig and probe capacitance.
RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
tPLZ
VLOAD/2
VT
VLOAD/2
VLZ
VOL
tPHZ
VOH
VHZ
0V
VT
0V
LVC QUAD Link
NOTE:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
NOTES:
1. Pulse Generator for All Pulses: Rate ≤ 10MHz; tF ≤ 2ns; tR ≤ 2ns.
2. Pulse Generator for All Pulses: Rate ≤ 10MHz; tF ≤ 2.5ns; tR ≤ 2.5ns.
Enable and Disable Times
SWITCH POSITION
Test
Switch
Open Drain
Disable Low
Enable Low
VLOAD
Disable High
Enable High
GND
All Other Tests
Open
INPUT
OUTPUT 1
tPLH1
tSK (x)
tPLH2
tH
tREM
SYNCHRONOUS
CONTROL
ASYNCHRONOUS
CONTROL
tSU
tH
LVC QUAD Link
Set-up, Hold, and Release Times
VOH
VT
VOL
LOW-HIGH-LOW
PULSE
VOH
VT
VOL
OUTPUT 2
tSU
VIH
VT
0V
VIH
VT
0V
VIH
VT
0V
VIH
VT
0V
TIMING
INPUT
VIH
VT
0V
tPHL1
tSK (x)
DATA
INPUT
VT
tW
HIGH-LOW-HIGH
PULSE
tPHL2
VT
LVC QUAD Link
tSK(x) = tPLH2 - tPLH1 or tPHL2 - tPHL1
Pulse Width
LVC QUAD Link
Output Skew - tSK(X)
NOTES:
1. For tSK(o) OUTPUT1 and OUTPUT2 are any two outputs.
2. For tSK(b) OUTPUT1 and OUTPUT2 are in the same bank.
5
IDT74LVC125A
3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
ORDERING INFORMATION
XX
XX
XXXX
IDT
LVC
Temp. Range
Device Type Package
DC
PY
PG
Small Outline IC
Shrink Small Outline Package
Thin Shrink Small Outline Package
125A
Quaduple Bus Buffer Gate with 3-State Outputs, ±24mA
74
–40°C to +85°C
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6
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