Renesas M6MGD137W34DWG 134,217,728-bit (8,388,608-word by 16-bit) cmos flash memory & 33,554,432-bit (2,097,152-word by 16-bit) cmos mobile ram Datasheet

Renesas LSIs
RENESAS
CONFIDENTIAL
M6MGD137W34DWG
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
Description
The M6MGD137W34DWG is a Stacked Chip Scale Package
(S-CSP) that contents 128M-bit Flash memory and 32M-bit
Mobile RAM in a 72-pin Stacked CSP for lead free use.
128M-bit Flash memory is a 8,388,608 words, single power
supply and high performance non-volatile memory fabricated
by CMOS technology for the peripheral circuit and DINOR IV
(Divided bit-line NOR IV) architecture for the memory cell. All
memory blocks are locked and can not be programmed or
erased, when F-WP# is Low. Using Software Lock Release
function, program or erase operation can be executed.
32M-bit Mobile RAM is a 2,097,152 words high density RAM
fabricated by CMOS technology for the peripheral circuit and
DRAM cell for the memory array. The interface is compatible
to an asynchronous SRAM.
The M6MGD137W34DWG is suitable for a high performance
cellular phone and a mobile PC that are required to be small
mounting area, weight and small power dissipation.
Features
Access Time
Flash
70ns (Max.)
Mobile RAM
80ns (Max.)
Supply Voltage
FM-VCC=2.7 ~ 3.0V
Ambient Temperature
Ta= -40 ~ 85 degree
Package
72pin S-CSP,
Ball pitch 0.80mm
Outer-ball:Su-Ag-Cu
The cells are automatically refreshed and the refresh control is
not required for system. The device also has the partial block
refresh scheme and the power down mode by writing the
command.
Application
Mobile communication products
PIN CONFIGURATION (TOP VIEW)
INDEX(Laser Marking)
1
3
4
5
6
7
8
NC
NC
A
NC
NC
B
FCE2#
10.8 mm
2
GND
FWE#
A16
A20
C
FRP#
FRY/BY#
A8
A11
D
A19
NC
FA21
A10
A15
E
MOE#
DQ11
NC
NC
A9
A14
F
DQ12
DQ13
DQ15
A13
G
A18
MLB#
FWP#
A5
A17
MUB#
MWE#
A4
A7
NC
A6
A0
FCE1#
A3
DQ9
FMVCC
GND
A2
DQ8
DQ10
DU
DQ6
NC
A12
H
A1
DQ0
DQ2
NC
DQ4
DQ14
GND
J
DQ3
FMVCC
DQ5
DQ7
NC
K
NC
L
NC
M
FOE#
MCE#
NC
DQ1
NC
NC
(Top View)
8.5 mm
FM-VCC
GND
A0-A20
F-A21
DQ0-DQ15
F-CE1#
F-CE2#
F-OE#
F-WE#
1
: VCC for Flash / Mobile RAM
: GND for Flash / Mobile RAM
: Common address for Flash/Mobile RAM
: Address for Flash
: Data I/O
: Flash chip enable 1
: Flash chip enable 2
: Output enable for Flash Memory
: Write enable for Flash Memory
F-RP#
F-WP#
F-RY/BY#
M-CE#
M-OE#
M-WE#
M-LB#
M-UB#
NC
DU
: Reset power down for Flash
: Write protect for Flash
: Flash Memory Ready /Busy
: Mobile RAM chip enable
: Output enable for Mobile RAM
: Write enable for Mobile RAM
: Lower byte control for Mobile RAM
: Upper byte control for Mobile RAM
: Non Connection
: Don’t Use
Rev.1.2_48a_bezc
Renesas LSIs
RENESAS
CONFIDENTIAL
M6MGD137W34DWG
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
MCP Block Diagram
FM-Vcc GND
A0 to F-A21
F-RY/BY#
A0 to F-A21
128Mbit DINOR IV
Flash Memory
F-CE1#
F-CE2#
F-WP#
F-RP#
F-WE#
F-OE#
DQ0 to DQ15
A0 to A20
M-WE#
M-OE#
M-UB#
M-LB#
M-CE#
32Mbit
Mobile RAM
Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#=“L” and upper 64Mbit is done
by F-CE2#=“L”. Never select each chip at the same time.
In the data sheet there are “VCC”s which mean “FM-VCC” (Common Vcc for Flash / Mobile RAM).
In the Flash Memory part they mean A21, OE# and WE# are F-A21, F-OE# and F-WE#.
In the Mobile RAM part UB# , LB#, OE# and WE# are M-UB# , M-LB#, M-OE# and M-WE#, respectively.
Capacitance
Symbol
2
Parameter
CIN
Input
capacitance
F-A21-A0, F-OE#, F-WE#, F-CE1#,
F-CE2#, F-WP#, F-RP#, M-OE#,
M-WE#, M-CE#, M-LB#, M-UB#
COUT
Output
Capacitance
DQ15-DQ0, F-RY/BY#
Conditions
Ta=25°C, f=1MHz,
Vin=Vout=0V
Min.
Limits
Typ.
Max.
Unit
26
pF
34
pF
Rev.1.2_48a_bezc
Renesas LSIs
M6MGD137W34DWG
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan
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REJ03C0064
© 2003 Renesas Technology Corp.
New publication, effective April 2003.
Specifications subject to change without notice
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