Renesas BCR08AM-14A-TB Triac low power use Datasheet

BCR08AM-14A
Triac
Low Power Use
REJ03G1200-0200
Rev.2.00
Nov 30, 2007
Features
•
•
•
•
IT (RMS) : 0.8 A
VDRM : 700 V
IFGT I, IRGT I, IRGT III : 5 mA
Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
3
2
Applications
Washing machine, electric fan, air cleaner, other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G1200-0200
Page 1 of 6
Rev.2.00
Nov 30, 2007
VDRM
VDSM
Voltage class
14
700
840
Unit
V
V
BCR08AM-14A
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
0.8
Unit
A
Surge on-state current
ITSM
8
A
I2 t
0.26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
W
W
V
A
°C
°C
g
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
1.0
2.0
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 67°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Unit
mA
V
Ι
VFGTΙ
—
—
2.0
V
ΙΙ
VRGTΙ
—
—
2.0
V
ΙΙΙ
VRGTΙΙΙ
—
—
2.0
V
Gate trigger voltageNote2
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
IFGTΙ
—
—
5
mA
ΙΙ
IRGTΙ
—
—
5
mA
ΙΙΙ
IRGTΙΙΙ
—
—
5
mA
VGD
Rth (j-c)
0.1
—
—
—
—
50
V
°C/W
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
0.5
—
—
V/µs
Tj = 125°C
Note2
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G1200-0200
Page 2 of 6
Rev.2.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply
Voltage
Main
Current
Main
Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
BCR08AM-14A
Performance Curves
Rated Surge On-State Current
Maximum On-State Characteristics
10
Tc = 25°C
9
Surge On-State Current (A)
On-State Current (A)
101
7
5
3
2
100
7
5
3
2
8
7
6
5
4
3
2
1
1.5
2.0
2.5
3.0
3.5
100
7
5
3
2
10–1
7
5
3
5 7 102
Gate Trigger Current vs.
Junction Temperature
VGM = 6V
103
7
5
Typical Example
PGM = 1W
PG(AV) =
0.1W
VGT
IGM =
0.5A
IFGT I, IRGT I, IRGT III
VGD = 0.1V
3 5 7 101 2 3
5 7 102 23
5 7103
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Gate Trigger Voltage vs.
Junction Temperature
103
7
5
Typical Example
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.2.00
Nov 30, 2007
102 2 3 5 7 103 2 3 5 7104 2 3 5 7105
3
Transient Thermal Impedance (°C/W)
100 (%)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
2 3
Gate Characteristics
Gate Current (mA)
REJ03G1200-0200
Page 3 of 6
5 7 101
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
7
5
3
2
2 3
On-State Voltage (V)
3
2
101
0
100
4.0
100 (%)
10–1
1.0
2
Junction to ambient
102
7
5
Junction to case
3
2
101
7
5
3
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR08AM-14A
Allowable Case Temperature vs.
RMS On-State Current
2.0
160
1.8
140
1.6
1.4
1.2
1.0
0.8
0.6
360°
Conduction
Resistive,
inductive loads
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Case Temperature (°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
120
100
80
60
40
20
0
1.4
Curves apply regardless of
conduction angle
360°
Conduction
Resistive,
inductive loads
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
160
Ambient Temperature (°C)
140
120
Curves apply regardless
of conduction angle
Natural Convection
No Fins
100
80
360°
Conduction
Resistive,
inductive loads
60
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
RMS On-State Current (A)
100 (%)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature
100 (%)
Holding Current vs.
Junction Temperature.
103
7
5
Laching Current (mA)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature
REJ03G1200-0200
Page 4 of 6
Laching Current vs.
Junction Temperature
Typical Example
3
Rev.2.00
(°C)
Nov 30, 2007
(°C)
102
7
5
3
2
Distribution
T2+, G–
Typical Example
101
7
5
3
2
100
7 + +
5 T2 , G
3 Typical
2 Example
10–1
–40
0
T2– , G–
Typical Example
40
80
120
Junction Temperature
(°C)
160
BCR08AM-14A
100 (%)
160
Typical Example
140
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs)
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
Typical Example
Tj = 125°C
140
120
100
80
I Quadrant
III Quadrant
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Trigger Current vs.
Gate Current Pulse Width
100 (%)
Commutation Characteristics
Conditions
VD = 200V
IT = 1A
τ = 500µs
Tj = 125°C
3
2
Minimum
Characteristics
Value
3
2
2
5 7 100
3
I Quadrant
2
3
6
A
Test Procedure I
V
Test Procedure II
6
A
6V
V
RG
Test Procedure III
Rev.2.00
A
6V
RG
V
Nov 30, 2007
RGT III
III
IIRGT
102
7
5
IFGT I
IRGT I
3
2
2 3
5 7 101
2 3
5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6V
Typical Example
2
101 0
10
5 7 101
Rate of Decay of On-State
Commutating Current (A/ms)
6
103
7
5
3
III Quadrant
100
7
5
REJ03G1200-0200
Page 5 of 6
160
Rate Of Rise Of Off-State Voltage (V/µs)
101
7 Typical Example
5
10–1
10–1
Breakover Voltage vs.
Rate Of Rise Of Off-State Voltage
Junction Temperature (°C)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Critical Rate Of Rise Of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
100 (%)
Breakover Voltage vs.
Junction Temperature
RG
BCR08AM-14A
Package Dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code

MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Order Code
Lead form
Straight type
Lead form
Form A8
Standard packing
Vinyl sack
Vinyl sack
Taping
Quantity
500
500
2000
Standard order code
Type name
Type name – Lead forming code
Type name – TB
Note : Please confirm the specification about the shipping in detail.
REJ03G1200-0200
Page 6 of 6
Rev.2.00
Nov 30, 2007
Standard order
code example
BCR08AM-14A
BCR08AM-14A-A6
BCR08AM-14A-TB
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2377-3473
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2
Similar pages