Diodes DDTA113TE Pnp pre-biased small signal sot-523 surface mount transistor Datasheet

SPICE MODELS: DDTA113TE DDTA123TE DDTA143TE DDTA114TE DDTA124TE DDTA144TE DDTA115TE DDTA125TE
DDTA (R1-ONLY SERIES) E
PNP PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
·
·
·
·
Epitaxial Planar Die Construction
A
Complementary NPN Types Available (DDTC)
SOT-523
C
Built-In Biasing Resistor, R1 only
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
G
C
1.45
1.75
1.60
H
D
¾
¾
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
B C
TOP VIEW
Lead Free/RoHS Compliant (Note 2)
B
Mechanical Data
·
·
Case: SOT-523
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
E
K
M
N
J
D
Terminals: Solderable per MIL-STD-202, Method 208
L
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
·
·
Terminal Connections: See Diagram
Marking: Date Code and Marking Code (See Diagrams
& Page 2)
·
·
Weight: 0.002 grams (approx.)
C
R1
B
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
a
0°
8°
¾
All Dimensions in mm
Ordering Information (See Page 2)
E
P/N
DDTA113TE
DDTA123TE
DDTA143TE
DDTA114TE
DDTA124TE
DDTA144TE
DDTA115TE
DDTA125TE
Maximum Ratings
R1 (NOM)
MARKING
1KW
2.2KW
4.7KW
10KW
22KW
47KW
100KW
200KW
P01
P03
P07
P12
P16
P19
P23
P25
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC (Max)
-100
mA
Power Dissipation
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
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DDTA (R1-ONLY SERIES) E
ã Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
Max Unit
Test Condition
-50
¾
¾
V
IC = -50mA
Collector-Emitter Breakdown Voltage
BVCEO
-50
¾
¾
V
IC = -1mA
Emitter-Base Breakdown Voltage
BVEBO
-5
¾
¾
V
IE = -50mA
Collector Cutoff Current
ICBO
¾
¾
-0.5
mA
VCB = -50V
Emitter Cutoff Current
IEBO
¾
¾
-0.5
mA
VEB = -4V
VCE(sat)
¾
¾
-0.3
V
IC/IB = -10mA/-1mA
IC/IB = -5mA/-0.5mA
IC/IB = -2.5mA/-.25mA
IC/IB = -1mA/-.1mA
IC/IB = -5mA/-0.5mA
IC/IB = -2.5mA/-.25mA
IC/IB = -1mA/-0.1mA
IC/IB = -.5mA/-.05mA
DC Current Transfer Ratio
hFE
100
250
600
¾
IC = -1mA, VCE = -5V
Gain-Bandwidth Product*
fT
¾
250
¾
MHz
VCE = -10V, IE = 5mA,
f = 100MHz
Collector-Emitter Saturation Voltage
DDTA113TE
DDTA123TE
DDTA143TE
DDTA114TE
DDTA124TE
DDTA144TE
DDTA115TE
DDTA125TE
* Transistor - For Reference Only
Ordering Information
Notes:
(Note 3)
Device
Packaging
Shipping
DDTA113TE-7-F
SOT-523
3000/Tape & Reel
DDTA123TE-7-F
SOT-523
3000/Tape & Reel
DDTA143TE-7-F
SOT-523
3000/Tape & Reel
DDTA114TE-7-F
SOT-523
3000/Tape & Reel
DDTA124TE-7-F
SOT-523
3000/Tape & Reel
DDTA144TE-7-F
SOT-523
3000/Tape & Reel
DDTA115TE-7-F
SOT-523
3000/Tape & Reel
DDTA125TE-7-F
SOT-523
3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code (See Page 1, e.g. P01 = DDTA113TE)
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXXYM
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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DDTA (R1-ONLY SERIES) E
VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V)
Pd, POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
0
-50
0
50
100
1
IC/IB = 10
25°C
0.1
-25°C
75°C
0.01
0.001
150
10
0
40
30
50
12
VCE = 10
IE = 0V
75°C
10
COB, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
1000
-25°C
20
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
25°C
100
10
8
6
4
2
0
0
1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
10
5
100
15
30
25
20
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
10
100
75°C
VO = 0.2
25°C
10
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
NEW PRODUCT
TYPICAL CURVES - DDTA114TE
-25°C
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
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-25°C
75°C
1
25°C
1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
DDTA (R1-ONLY SERIES) E
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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DDTA (R1-ONLY SERIES) E
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