ON NSI45030AZT1G Constant current regulator & led driver Datasheet

NSI45030AZT1G
Constant Current Regulator
& LED Driver
45 V, 30 mA + 10%, 1.4 W Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs. The CCR is based on patent-pending
Self-Biased Transistor (SBT) technology and regulates current over a
wide voltage range. It is designed with a negative temperature
coefficient to protect LEDs from thermal runaway at extreme voltages
and currents.
The CCR turns on immediately and is at 25% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator. The high anode-cathode
voltage rating withstands surges common in Automotive, Industrial
and Commercial Signage applications. The CCR comes in thermally
robust packages and is qualified to AEC-Q101 standard.
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Ireg(SS) = 30 mA
@ Vak = 7.5 V
Anode 1
Features
•
•
•
•
•
•
•
•
Cathode 2/4
Robust Power Package: 1.4 Watts
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
AEC-Q101 Qualified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−223
CASE 318E
STYLE 2
MARKING DIAGRAM
C
Applications
• Automobile: Chevron Side Mirror Markers, Cluster, Display &
•
•
•
•
Instrument Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Switch Contact Wetting
Application Note AND8391/D − Power Dissipation Considerations
Application Note AND8349/D − Automotive CHMSL
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Anode−Cathode Voltage
Reverse Voltage
Operating and Storage Junction
Temperature Range
ESD Rating:
Human Body Model
Machine Model
Symbol
Value
Unit
Vak Max
45
V
VR
500
mV
TJ, Tstg
−55 to +150
°C
ESD
Class 1C
Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 1
1
AYW
AAHG
G
1
A
C
NC
A
= Assembly Location
Y
= Year
W
= Work Week
AAH
= Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NSI45030AZT1G
SOT−223
(Pb−Free)
Shipping†
1000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSI45030AZ/D
NSI45030AZT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
1.
2.
3.
4.
Symbol
Min
Typ
Max
Unit
Ireg(SS)
27
30
33
mA
Voverhead
Pulse Current @ Vak = 7.5 V (Note 3)
Ireg(P)
Capacitance @ Vak = 7.5 V (Note 4)
C
Capacitance @ Vak = 0 V (Note 4)
C
1.8
28.4
Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300
Voverhead = Vin − VLEDs. Voverhead is typical value for 70% Ireg(SS).
Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.
f = 1 MHz, 0.02 V RMS.
mm2
31.55
V
34.7
mA
2.6
pF
6.9
pF
2 oz. Copper traces, in still air.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
PD
954
7.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
RθJA
131
°C/W
RψJL4
40.8
°C/W
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
PD
1074
8.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
RθJA
116
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 6)
RψJL4
39.9
°C/W
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
PD
1150
9.2
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
RθJA
109
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 7)
RψJL4
42
°C/W
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
PD
1300
10.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
RθJA
96
°C/W
RψJL4
39.4
°C/W
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
PD
1214
9.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
RθJA
103
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 9)
RψJL4
40.2
°C/W
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
PD
1389
11.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
RθJA
90
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 10)
RψJL4
37.7
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Thermal Reference, Junction−to−Lead 4 (Note 5)
Thermal Reference, Junction−to−Lead 4 (Note 8)
5. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 100 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
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2
NSI45030AZT1G
TYPICAL PERFORMANCE CURVES
Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air
Ireg(SS), STEADY STATE CURRENT (mA)
Ireg, CURRENT REGULATION (mA)
60
50
40
30
20
10
0
VR
−10
−20
−10
0
10
20
30
40
50
60
35
TA = −40°C
30
TA = 25°C
25
TA = 85°C
[ −0.088 mA/°C
typ @ Vak = 7.5 V
[ −0.072 mA/°C
typ @ Vak = 7.5 V
TA = 125°C
[ −0.061 mA/°C
typ @ Vak = 7.5 V
20
15
10
5
0
DC Test Steady State, Still Air
0
1
6
7
8
9
Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
Ireg(SS), STEADY STATE CURRENT (mA)
TA = 25°C
30
29
28
27
26
3.0
Non−Repetitive Pulse Test
4.0
5.0
6.0
7.0
8.0
9.0
10
Vak @ 7.5 V
TA = 25°C
32
31
30
29
28
27
28
29
30
Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)
Vak @ 7.5 V
TA = 25°C
POWER DISSIPATION (mW)
30
15
20
25
33
35
34
30
500 mm2/2 oz
2000
31
10
32
Figure 4. Steady State Current vs. Pulse
Current Testing
2200
5
31
Ireg(P), PULSE CURRENT (mA)
32
300 mm2/2 oz
1800
1600
100 mm2/2 oz
1400
1200
1000
500 mm2/1 oz
800
300 mm2/1 oz
600
400
−40
35
100 mm2/1 oz
−20
0
20
40
60
TA, AMBIENT TEMPERATURE (°C)
TIME (s)
Figure 6. Power Dissipation vs. Ambient
Temperature @ TJ = 1505C
Figure 5. Current Regulation vs. Time
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3
10
33
Vak, ANODE−CATHODE VOLTAGE (V)
Ireg, CURRENT REGULATION (mA)
5
Figure 1. General Performance Curve for CCR
31
0
4
Vak, ANODE−CATHODE VOLTAGE (V)
32
29
3
2
Vak, ANODE−CATHODE VOLTAGE (V)
33
Ireg(P), PULSE CURRENT (mA)
40
80
NSI45030AZT1G
APPLICATIONS
D1
Anode
D1
Q1
Q2
Qx
LED
LED
LED
Anode
Cathode
+
−
Vin
Q1
Q2
Qx
Cathode
HF3−R5570
HF3−R5570
+
−
HF3−R5570
Vin
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
LED
HF3−R5570
HF3−R5570
LED
LED
HF3−R5570
HF3−R5570
Figure 7. Typical Application Circuit
(30 mA each LED String)
Figure 8. Typical Application Circuit
(90 mA each LED String)
Number of LED’s that can be connected is determined by:
D1 is a reverse battery protection diode
LED’s = ((Vin − QX VF + D1 VF)/LED VF)
Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V
LED VF = 2.2 Vdc @ 30 mA
(12 Vdc − 4.2 Vdc)/2.2 Vdc = 3 LEDs in series.
Number of LED’s that can be connected is determined by:
D1 is a reverse battery protection diode
Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V
LED VF = 2.6 Vdc @ 90 mA
(12 Vdc − (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series.
Number of Drivers = LED current/30 mA
90 mA/30 mA = 3 Drivers (Q1, Q2, Q3)
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4
NSI45030AZT1G
Comparison of LED Circuit using CCR vs. Resistor Biasing
ON Semiconductor CCR Design
Resistor Biased Design
Constant brightness over full Automotive Supply Voltage
(more efficient), see Figure 9
Large variations in brightness over full Automotive Supply Voltage
Little variation of power in LEDs, see Figure 10
Large variations of current (power) in LEDs
Constant current extends LED strings lifetime, see Figure 9
High Supply Voltage/ Higher Current in LED strings limits lifetime
Current decreases as voltage increases, see Figure 9
Current increases as voltage increases
Current supplied to LED string decreases as temperature
increases (self-limiting), see Figure 2
LED current decreases as temperature increases
No resistors needed
Requires costly inventory
(need for several resistor values to match LED intensity)
Fewer components, less board space required
More components, more board space required
Surface mount component
Through-hole components
40
35
200
Pd LEDs (mW)
25
Circuit Current
with 250 W
20
Representative Test Data
for Figure 7 Circuit, Current
of LEDs, FR−4 @ 300 mm2,
2 oz Copper Area
15
10
9
10
TA = 25°C
220
Circuit Current with
CCR Device
30
I (mA)
240
TA = 25°C
11
12
13
14
15
LED Power with
CCR Device
180
160
140
LED Power
with 250 W
120
100
Representative Test Data
for Figure 7 Circuit, Pd of
LEDs, FR−4 @ 300 mm2,
2 oz Copper Area
80
60
16
9
10
11
12
13
14
Vin (V)
Vin (V)
Figure 9. Series Circuit Current
Figure 10. LED Power
Current Regulation: Pulse Mode (Ireg(P)) vs DC
Steady-State (Ireg(SS))
15
16
Ireg(SS) for stated board material, size, copper area and
copper thickness. Ireg(P) will always be greater than Ireg(SS)
due to the die temperature rising during Ireg(SS). This heating
effect can be minimized during circuit design with the
correct selection of board material, metal trace size and
weight, for the operating current, voltage, board operating
temperature (TA) and package. (Refer to Thermal
Characteristics table).
There are two methods to measure current regulation:
Pulse mode (Ireg(P)) testing is applicable for factory and
incoming inspection of a CCR where test times are a
minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is
applicable for application verification where the CCR will
be operational for seconds, minutes, or even hours. ON
Semiconductor has correlated the difference in Ireg(P) to
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5
NSI45030AZT1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE M
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
HE
E
1
2
3
b
e1
e
0.08 (0003)
C
q
A
A1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
q
STYLE 2:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
ANODE
CATHODE
NC
CATHODE
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
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