ON CAT660EVA-GT3 100 ma cmos charge pump inverter/doubler Datasheet

CAT660
100 mA CMOS Charge Pump
Inverter/Doubler
Description
The CAT660 is a charge−pump voltage converter. It will invert a
1.5 V to 5.5 V input to a −1.5 V to −5.5 V output. Only two external
capacitors are needed. With a guaranteed 100 mA output current
capability, the CAT660 can replace a switching regulator and its
inductor. Lower EMI is achieved due to the absence of an inductor.
In addition, the CAT660 can double a voltage supplied from a
battery or power supply. Inputs from 2.5 V to 5.5 V will yield a
doubled, 5 V to 11 V output voltage.
A Frequency Control pin (BOOST/FC) is provided to select either a
high (80 kHz) or low (10 kHz) internal oscillator frequency, thus
allowing quiescent current vs. capacitor size trade−offs to be made.
The 80 kHz frequency is selected when the FC pin is connected to V+.
The operating frequency can also be adjusted with an external
capacitor at the OSC pin or by driving OSC with an external clock.
8−pin SOIC package is available in the industrial temperature range.
The CAT660 replaces the MAX660 and the LTC®660. In addition,
the CAT660 is pin compatible with the 7660/1044, offering an easy
upgrade for applications with 100 mA loads.
•
•
•
•
•
Replaces MAX660 and LTC®660
Converts V+ to V− or V+ to 2V+
Low Output Resistance, 4 W Typical
High Power Efficiency
Selectable Charge Pump Frequency
− 10 kHz or 80 kHz
− Optimize Capacitor Size
Low Quiescent Current
Pin−compatible, High−current Alternative to 7660/1044
Industrial Temperature Range
Available in 8−pin SOIC Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
July, 2012 − Rev. 26
BOOST/FC
1
V+
CAP+
OSC
GND
LV
OUT
(Top View)
MARKING DIAGRAMS
CAT660EVA
CAT660EVA = CAT660EVA−GT3
ORDERING INFORMATION
CAT660EVA−GT3
Negative Voltage Generator
Voltage Doubler
Voltage Splitter
Low EMI Power Source
GaAs FET Biasing
Lithium Battery Power Supply
Instrumentation
LCD Contrast Bias
Cellular Phones, Pagers
© Semiconductor Components Industries, LLC, 2012
PIN CONFIGURATION
Device
Applications
•
•
•
•
•
•
•
•
•
SOIC−8
V SUFFIX
CASE 751BD
CAP−
Features
•
•
•
•
•
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Package
Shipping
SOIC−8
(Pb−Free)
3,000 /
Tape & Reel
1. All packages are RoHS−compliant (Lead−free,
Halogen−free).
2. For information on tape and reel specifications, including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
3. For detailed information and a breakdown of
device nomenclature and numbering systems,
please see the ON Semiconductor Device Nomenclature document, TND310/D, available at
www.onsemi.com
1
Publication Order Number:
CAT660/D
CAT660
Typical Application
+VIN
1.5 V to 5.5 V
1
2
C1 +
1 mF to
150 mF
3
4
V+
BOOST/FC
CAP+
GND
CAT660
CAP−
OSC
LV
OUT
8
7
6
5
C2
1 mF to
150 mF
Inverted
Negative
Voltage
Output
C1
1
+
VIN = 2.5 V
to 5.5 V
1 mF to
150 mF
Figure 1. Voltage Inverter
2
3
4
BOOST/FC
CAP+
GND
CAP−
CAT660
V+
OSC
LV
OUT
8
7
6
Doubled
Positive
Voltage
C2 Output
1 mF to
150 mF
5
Figure 2. Positive Voltage Doubler
Table 1. PIN DESCRIPTIONS
Circuit Configuration
Pin Number
Name
Inverter Mode
1
Boost/FC
Frequency Control for the internal oscillator. With an external
oscillator BOOST/FC has no effect.
Boost/FC
Doubler Mode
Same as inverter.
Oscillator Frequency
Open
10 kHz typical, 5 kHz minimum
V+
80 kHz typical, 40 kHz minimum
2
CAP+
Charge pump capacitor. Positive terminal.
Same as inverter.
3
GND
Power supply ground.
Power supply. Positive voltage input.
4
CAP−
Charge pump capacitor. Negative terminal.
Same as inverter.
5
OUT
Output for negative voltage.
Power supply ground.
6
LV
Low−Voltage selection pin. When the input voltage is less
than 3 V, connect LV to GND. For input voltages above 3 V,
LV may be connected to GND or left open. If OSC is driven
externally, connect LV to GND.
LV must be tied to OUT for all input
voltages.
7
OSC
Oscillator control input. An external capacitor can be connected to lower the oscillator frequency. An external oscillator
can drive OSC and set the chip operating frequency. The
charge−pump frequency is one−half the frequency at OSC.
Same as inverter. Do not overdrive OSC
in doubling mode. Standard logic levels
will not be suitable. See the applications
section for additional information.
8
V+
Power supply. Positive voltage input.
Positive voltage output.
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2
CAT660
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
6
V
−0.3 to (V+ + 0.3)
V
The least negative of (Out − 0.3 V) or
(V+ − 6 V) to (V+ + 0.3 V)
V
1
sec.
730
500
1
mW
mW
W
−65 to +160
°C
300
°C
−40 to +85
°C
V+ to GND
Input Voltage (Pins 1, 6 and 7)
BOOST/FC and OSC Input Voltage
Output Short−circuit Duration to GND
(OUT may be shorted to GND for 1 sec without damage but shorting OUT
to V+ should be avoided.)
Continuous Power Dissipation (TA = 70°C)
Plastic DIP
SOIC
TDFN
Storage Temperature
Lead Soldering Temperature (10 sec)
Operating Ambient Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: TA = Ambient Temperature
Table 3. ELECTRICAL CHARACTERISTICS (V+ = 5 V, C1 = C2 = 150 mF, Boost/FC = Open, COSC = 0 pF, inverter mode with test
circuit as shown in Figure 3 unless otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.)
Parameter
Supply Voltage
Symbol
VS
Supply Current
IS
Output Current
IOUT
Conditions
Min
Inverter: LV = Open, RL = 1 kW
Max
Units
3.0
5.5
V
Inverter: LV = GND, RL = 1 kW
1.5
5.5
Doubler: LV = OUT, RL = 1 kW
2.5
5.5
BOOST/FC = open, LV = Open
BOOST/FC = V+, LV = Open
Output Resistance
RO
OUT is more negative than −4 V
Typ
0.09
0.5
0.3
3
100
mA
4
IL = 100 mA, C1 = C2 = 150 mF (Note 5)
BOOST/FC = V+ (C1, C2 ESR ≤ 0.5 W)
FOSC
OSC Input
Current
IOSC
Power Efficiency
PE
BOOST/FC = Open
5
10
BOOST/FC = V+
40
80
BOOST/FC = Open
BOOST/FC = V+
VEFF
W
mA
%
96
98
RL = 500 W connected between GND and OUT,
TA = 25°C (Inverter)
92
96
No load, TA = 25°C
kHz
±1
±5
RL = 1 kW connected between V+ and OUT,
TA = 25°C (Doubler)
IL = 100 mA to GND, TA = 25°C (Inverter)
Voltage Conversion
Efficiency
7
12
IL = 100 mA, C1 = C2 = 10 mF
Oscillator Frequency
(Note 6)
mA
88
99
99.9
%
4. In Figure 3, test circuit capacitors C1 and C2 are 150 mF and have 0.2 W maximum ESR. Higher ESR levels may reduce efficiency and output
voltage.
5. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency
keep external capacitor ESR under 0.2 W.
6. FOSC is tested with COSC = 100 pF to minimize test fixture loading. The test is correlated back to COSC = 0 pF to simulate the capacitance
at OSC when the device is inserted into a test socket without an external COSC.
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CAT660
Voltage Inverter
CAT660
1
V+
2
+
C1
150 mF
3
4
BOOST/FC
V+
OSC
CAP+
LV
GND
OUT
CAP−
8
IS
V+
5V
External
Oscillator
7
6
RL
COSC
IL
5
+
VOUT
C2
150 mF
Figure 3. Test Circuit
TYPICAL OPERATING CHARACTERISTICS
(Typical characteristic curves are generated using the test circuit in Figure 3. Inverter test conditions are: V+ = 5 V, LV = GND, BOOST/FC
= Open and TA = 25°C unless otherwise indicated. Note that the charge−pump frequency is one−half the oscillator frequency.)
120
120
90
No Load
60
30
0
1
2
3
4
5
60
VIN = 3 V
40
VIN = 2 V
0
−50
6
−25
0
25
50
75
100
INPUT VOLTAGE (V)
TEMPERATURE (°C)
Figure 4. Supply Current vs. Input Voltage
Figure 5. Supply Current vs. Temperature
(No Load)
125
8
OUTPUT RESISTANCE (W)
OUTPUT RESISTANCE (W)
80
20
10
8
6
100 W Load
4
2
0
VIN = 5 V
100
INPUT CURRENT (mA)
INPUT CURRENT (mA)
150
1
2
3
4
5
7
6
VIN = 2 V
5
VIN = 3 V
4
VIN = 5 V
3
2
−50
6
−25
0
25
50
75
100
125
INPUT VOLTAGE (V)
TEMPERATURE (°C)
Figure 6. Output Resistance vs. Input Voltage
Figure 7. Output Resistance vs. Temperature
(50 W Load)
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CAT660
5.0
1.0
4.8
0.8
OUTPUT VOLTAGE (V)
INV. OUTPUT VOLTAGE (V)
TYPICAL OPERATING CHARACTERISTICS
4.6
4.4
4.2
4.0
0
20
40
60
80
0.6
0.4
V+ = 5 V
0.2
0
100
V+ = 3 V
0
20
40
60
80
LOAD CURRENT (mA)
LOAD CURRENT (mA)
Figure 8. Inverted Output Voltage vs. Load,
V+ = 5 V
Figure 9. Output Voltage Drop vs. Load
Current
100
200
20
18
14
FREQUENCY (kHz)
LV = OPEN
LV = GND
12
10
8
6
4
2
0
150
LV = GND
100
LV = OPEN
50
BOOST = +V
BOOST = OPEN
2
3
4
5
0
6
2
3
4
5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 10. Oscillator Frequency vs. Supply
Voltage
Figure 11. Oscillator Frequency vs. Supply
Voltage
10,000
No Load
INPUT CURRENT (mA)
FREQUENCY (kHz)
16
1,000
V+ = 5 V
100
10
1
10
100
OSCILLATOR FREQUENCY (kHz)
Figure 12. Supply Current vs. Oscillator
Frequency
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5
1,000
6
CAT660
Application Information
Circuit Description and Operating Theory
nor does it include output voltage ripple. It does allow one
to understand the switch−capacitor topology and make
prudent engineering tradeoffs.
For example, power conversion efficiency is set by the
output impedance, which consists of REQ and switch
resistance. As switching frequency is decreased, REQ, the
1/FC1 term, will dominate the output impedance, causing
higher voltage losses and decreased efficiency. As the
frequency is increased quiescent current increases. At high
frequency this current becomes significant and the power
efficiency degrades.
The oscillator is designed to operate where voltage losses
are a minimum. With external 150 mF capacitors, the internal
switch resistances and the Equivalent Series Resistance
(ESR) of the external capacitors determine the effective
output impedance.
A block diagram of the CAT660 is shown in Figure 15.
The CAT660 is a replacement for the MAX660 and the
LTC660.
The CAT660 switches capacitors to invert or double an
input voltage.
Figure 13 shows a simple switch capacitor circuit. In
position 1 capacitor C1 is charged to voltage V1. The total
charge on C1 is Q1 = C1V1. When the switch moves to
position 2, the input capacitor C1 is discharged to voltage
V2. After discharge, the charge on C1 is Q2 = C1V2.
The charge transferred is:
DQ + Q1 * Q2 + C1
(V1 * V2)
If the switch is cycled “F” times per second, the current
(charge transfer per unit time) is:
I+F
DQ + F
C1 (V1 * V2)
Rearranging in terms of impedance:
I+
(V1 * V2)
+ V1 * V2
REQ
(1ńFC1)
The 1/FC1 term can be modeled as an equivalent
impedance REQ. A simple equivalent circuit is shown in
Figure 14. This circuit does not include the switch resistance
REQ
V2
V1
C1
C2
V2
V1
RL
C2
RL
REQ + 1
FC1
Figure 13. Switched−Capacitor Building Block
Figure 14. Switched−Capacitor Equivalent Circuit
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CAT660
Oscillator Frequency Control
By connecting the BOOST/FC pin to V+, the charge and
discharge currents are increased, and the frequency is
increased by approximately 8 times. Increasing the
frequency will decrease the output impedance and ripple
currents. This can be an advantage at high load currents.
Increasing the frequency raises quiescent current but allows
smaller capacitance values for C1 and C2.
If pin 7, OSC, is loaded with an external capacitor the
frequency is lowered. By using the BOOST/FC pin and an
external capacitor at OSC, the operating frequency can be
set.
Note that the frequency appearing at CAP+ or CAP− is
one−half that of the oscillator.
Driving the CAT660 from an external frequency source
can be easily achieved by driving Pin 7 and leaving the
BOOST pin open, as shown in Figure 16. The output current
from Pin 7 is small, typically 1 mA to 8 mA, so a CMOS can
drive the OSC pin. For 5 V applications, a TTL logic gate can
be used if an external 100 kΩ pull−up resistor is used as
shown in Figure 17.
The switching frequency can be raised, lowered or driven
from an external source. Figure 16 shows a functional
diagram of the oscillator circuit.
The CAT660 oscillator has four control modes:
Table 4.
OSC Pin
Connection
Nominal
Oscillator
Frequency
Open
Open
10 kHz
BOOST/FC = V+
Open
80 kHz
Open or
BOOST/FC = V+
External Capacitor
−
External Clock
Frequency of
external clock
BOOST/FC
Pin Connection
Open
If BOOST/FC and OSC are left floating (Open), the
nominal oscillator frequency is 10 kHz. The pump
frequency is one−half the oscillator frequency.
V+
(8)
SW1
BOOST/FC
f
8x
(1)
OSC
+
B2
CAP−
(4)
f
OSC
(7)
SW2
CAP+
(2)
C1
VOUT
(5)
C2
+
LV
(6)
CLOSED WHEN
V+ > 3.0 V
GND
(3)
Figure 15. CAT660 Block Diagram
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7
(N) = Pin Number
CAT660
Capacitor Selection
Output voltage ripple is determined by the value of C2 and
the load current. C2 is charged and discharged at a current
roughly equal to the load current. The internal switching
frequency is one−half the oscillator frequency.
Low ESR capacitors are necessary to minimize voltage
losses, especially at high load currents. The exact values of
C1 and C2 are not critical but low ESR capacitors are
necessary.
The ESR of capacitor C1, the pump capacitor, can have a
pronounced effect on the output. C1 currents are
approximately twice the output current and losses occur on
both the charge and discharge cycle. The ESR effects are
thus multiplied by four. A 0.5 Ω ESR for C1 will have the
same effect as a 2 Ω increase in CAT660 output impedance.
VRIPPLE + IOUTń(FOSC
C2) ) IOUT
ESRC2
For example, with a 10 kHz oscillator frequency (5 kHz
switching frequency), a 150 mF C2 capacitor with an ESR of
0.2 Ω and a 100 mA load peak−to−peak ripple voltage is
87 mV.
Table 5. VRIPPLE vs. FOSC
VRIPPLE (mV)
IOUT (mA)
FOSC (kHz)
C2 (mF)
C2 ESR (W)
87
100
10
150
0.2
28
100
80
150
0.2
V+
7.0 I
I
REQUIRED FOR TTL LOGIC
BOOST/FC
(1)
CAT660
NC
OSC
(7)
+
C1
~18 pF
LV
(6)
V+
7.0 I
1
8
V+
BOOST/FC
2
7
CAP+
OSC
3
6
GND
LV
4
5
CAP−
OUT
I
100 k
−V+
+
Figure 16. Oscillator
C2
Figure 17. External Clocking
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OSC
INPUT
CAT660
Capacitor Suppliers
The following manufacturers supply low−ESR capacitors:
Table 6. CAPACITOR SUPPLIERS
Manufacturer
Capacitor Type
Phone
WEB
Email
Comments
AVX/Kyocera
TPS/TPS3
843−448−9411
www.avxcorp.com
[email protected]
Tantalum
Vishay/Sprague
595
402−563−6866
www.vishay.com
−
Aluminum
Sanyo
MV−AX, UGX
619−661−6835
www.sanyo.com
[email protected]
Aluminum
Nichicon
F55
847−843−7500
www.nichicon−us.com
−
Tantalum
HC/HD
Aluminum
Capacitor manufacturers continually introduce new series and offer different package styles. It is recommended that before
a design is finalized capacitor manufacturers should be surveyed for their latest product offerings.
Controlling Loss in CAT660 Applications
3. Output or reservoir (C2) capacitor ESR:
VLOSSC2 = ESRC2 x ILOAD, where ESRC2 is
the ESR of capacitor C2.
Increasing the value of C2 and/or decreasing its ESR will
reduce noise and ripple.
The effective output impedance of a CAT660 circuit is
approximately:
There are three primary sources of voltage loss:
1. Output resistance:
VLOSSW = ILOAD x ROUT, where ROUT is the
CAT660 output resistance and ILOAD is the load
current.
2. Charge pump (C1) capacitor ESR:
VLOSSC1 ≈ 4 x ESRC1 x ILOAD, where
ESRC1 is the ESR of capacitor C1.
Rcircuit [ Rout 660 ) (4
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ESRC1) ) ESRC2
CAT660
Typical Applications
Voltage Inversion Positive−to−Negative
The CAT660 easily provides a negative supply voltage from a positive supply in the system. Figure 18 shows a typical circuit.
The LV pin may be left floating for positive input voltages at or above 3.3 V.
CAT660
NC
1
2
+
3
C1
4
V+
BOOST/FC
OSC
CAP+
LV
GND
OUT
CAP−
8
VIN
1.5 V to 5.5 V
7
6
5
+
VOUT = −VIN
C2
Figure 18. Voltage Inverter
Positive Voltage Doubler
The voltage doubler circuit shown in Figure 19 gives VOUT = 2 x VIN for input voltages from 2.5 V to 5.5 V.
1N5817*
CAT660
1
2
C1
150 mF
VIN
+
3
4
2.5 V to 5.5 V
BOOST/FC
CAP+
GND
V+
OSC
LV
CAP−
OUT
8
7
6
5
*SCHOTTKY DIODE IS FOR START−UP ONLY
Figure 19. Voltage Doubler
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10
+
VOUT = 2VIN
C2
150 mF
CAT660
Precision Voltage Divider
A precision voltage divider is shown in Figure 20. With very light load currents under 100 nA, the voltage at pin 2 will be
within 0.002% of V+/2. Output voltage accuracy decreases with increasing load.
CAT660
1
2
+
3
C1
150 mF
V ) ± 0.002%
2
IL ≤ 100 nA
4
BOOST/FC
V+
CAP+
OSC
GND
LV
CAP−
OUT
8
7
V+
3 V to 11 V
6
5
+
C2
150 mF
Figure 20. Precision Voltage Divider (Load 3 100 nA)
Battery Voltage Splitter
Positive and negative voltages that track each other can be obtained from a battery. Figure 21 shows how a 9 V battery can
provide symmetrical positive and negative voltages equal to one−half the battery voltage.
CAT660
BATTERY
9V
3 V ≤ VBAT ≤ 11 V
1
VBAT
C1
150 mF
2
+
3
4
BOOST/FC
CAP+
V+
OSC
GND
LV
CAP−
OUT
8
7
V
) BAT (4.5 V)
2
6
V
* BAT (−4.5 V)
2
5
+
Figure 21. Battery Splitter
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C2
150 mF
CAT660
Cascade Operation for Higher Negative Voltages
The CAT660 can be cascaded as shown in Figure 22 to generate more negative voltage levels. The output resistance is
approximately the sum of the individual CAT660 output resistance.
VOUT = −N x VIN, where N represents the number of cascaded devices.
+VIN
8
8
2
2
+
3
C1
CAT660
“1”
+
3
C1
5
4
CAT660
“N”
5
4
+
VOUT = −NVIN
+
C2
C2
Figure 22. Cascading to Increase Output Voltage
Parallel Operation
Paralleling CAT660 devices will lower output resistance. As shown in Figure 23, each device requires its own pump
capacitor, C2, but the output reservoir capacitor is shared with all devices. The value of C2 should be increased by a factor of
N, where N is the number of devices.
The output impedance of the combined CAT660’s is:
R OUT (Of “N” CAT660Ȁs) +
R OUT (Of the CAT660)
N (Number of devices)
+VIN
8
8
2
2
+
C1
3
4
CAT660
“1”
+
C1
5
3
4
CAT660
“N”
5
+
Figure 23. Paralleling Devices Reduce Output Resistance
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C2
CAT660
PACKAGE DIMENSIONS
SOIC 8, 150 mils
CASE 751BD−01
ISSUE O
E1
E
SYMBOL
MIN
A
1.35
1.75
A1
0.10
0.25
b
0.33
0.51
c
0.19
0.25
D
4.80
5.00
E
5.80
6.20
E1
3.80
MAX
4.00
1.27 BSC
e
PIN # 1
IDENTIFICATION
NOM
h
0.25
0.50
L
0.40
1.27
θ
0º
8º
TOP VIEW
D
h
A1
θ
A
c
e
b
L
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MS-012.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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CAT660/D
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