LRC L2SD1781KQLT1 Medium power transistor(32v, 0.8a) Datasheet

LRC
LESHAN RADIO COMPANY,LTD.
Medium Power Transistor
(32V, 0.8A)
L2SD1781K*LT1
FFeatures
1) Very low VCE(sat).
VCE(sat) t 0.4 V (Typ.)
(IC / IB = 500mA / 50mA)
2) High current capacity in compact
package.
3) Complements the L2SB1197K*LT1
4) Pb Free Package is Available.
L2SD1781K*LT1
3
1
2
SOT-23 /TO-236AB
FStructure
Epitaxial planar type
NPN silicon transistor
COLLECTOR
3
FAbsolute maximum ratings (Ta = 25_C)
1
BASE
2
EMITTER
ORDERING INFORMATION
Device
L2SD1781KQLT1
Marking
AFQ
L2SD1781KQLT1G AFQ(Pb-Free)
L2SD1781KRLT1
AFR
L2SD1781KRLT1G AFR(Pb-Free)
Shipping
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
L2SD1781K*LT1-1/4
LRC
LESHAN RADIO COMPANY,LTD.
L2SD1781K*LT1
FElectrical characteristics (Ta = 25_C)
DEVICE MARKING
L2SD1781KQLT1=AFQ
L2S1781KRLT1=AFR
ltem
Q
R
hFE
120~270
180~390
Electrical characteristic curves
L2SD1781K*LT1-2/4
LRC
LESHAN RADIO COMPANY,LTD.
L2SD1781K*LT1
L2SD1781K*LT1-3/4
LRC
LESHAN RADIO COMPANY,LTD.
L2SD1781K*LT1
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
L2SD1781K*LT1-4/4
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