® FQD6N60C 600V N-Channel MOSFET Features Description • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • Low gate charge ( typical 16 nC ) • Low Crss ( typical 7 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability D ! D ● ◀ G G! D-PAK S FQD Series ▲ ● ● ! S Absolute Maximum Ratings Symbol Parameter FQD6N60C Units 600 V 4 A 2.4 A 16 A VDSS Drain-Source Voltage ID Drain Current IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 8.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 80 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) - Derate above 25°C 0.78 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter Typ Max Units -- 1.56 °C/W RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FQD6N60C Rev. A 1 www.fairchildsemi.com FQD6N60C 600V N-Channel MOSFET QFET Device Marking Device Package Reel Size Tape Width Quantity FQD6N60C FQD6N60CTM DPAK 380mm 16mm 2500 FQD6N60C FQD6N60CTF DPAK 380mm 16mm 2000 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 1.7 2.0 Ω -- 4.8 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.0 A gFS Forward Transconductance VDS = 40 V, ID = 2.0 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 620 810 pF -- 65 85 pF -- 7 10 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 5.5 A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 5.5 A, VGS = 10 V (Note 4, 5) -- 15 40 ns -- 45 100 ns -- 45 100 ns -- 45 100 ns -- 16 20 nC -- 3.5 -- nC -- 6.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.0 A -- -- 1.4 V trr Reverse Recovery Time -- 310 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs -- 2.1 -- µC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQD6N60C Rev. A 2 www.fairchildsemi.com FQD6N60C 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 0 10 10 ID, Drain Current [A] 1 10 ID, Drain Current [A] Figure 2. Transfer Characteristics -1 10 1 o 150 C o -55 C 10 0 o 25 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 10 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test -1 -2 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1 5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 6 VGS = 10V 4 3 VGS = 20V 2 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 0 0 2 4 6 8 10 12 -1 10 14 0.2 0.4 0.6 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 600 Coss 400 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 200 1.2 1.4 1.6 1.8 2.0 12 VDS = 120V 10 800 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 5.5A 0 -1 10 0 10 0 1 10 VDS, Drain-Source Voltage [V] FQD6N60C Rev. A 0 4 8 12 16 QG, Total Gate Charge [nC] 3 www.fairchildsemi.com FQD6N60C 600V N-Channel MOSFET Typical Performance Characteristics FQD6N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2 10 4.5 ID, Drain Current [A] ID, Drain Current [A] Operation in This Area is Limited by R DS(on) 10 µs 1 10 100 µs 1 ms 10 ms DC 0 10 3.0 1.5 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 2 10 0.0 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [℃] Zθ JC(t), Thermal Response Figure 11. Transient Thermal Response Curve 10 0 D = 0 .5 0 .2 ※ N o te s : 1 . Z θ J C( t) = 1 .5 6 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) 0 .1 10 0 .0 5 -1 0 .0 2 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FQD6N60C Rev. A 4 www.fairchildsemi.com FQD6N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp FQD6N60C Rev. A VDS (t) VDD DUT 10V ID (t) tp 5 Time www.fairchildsemi.com FQD6N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQD6N60C Rev. A 6 www.fairchildsemi.com FQD6N60C 600V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FQD6N60C Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 8 FQD6N60C Rev. A www.fairchildsemi.com FQD6N60C 600V N-Channel MOSFET TRADEMARKS