IXYS IXBF9N140 High voltage bimosfet Datasheet

Advanced Technical Information
IXBF 9N140 IC25
IXBF 9N160 VCES
High Voltage
BIMOSFETTM
VCE(sat)
tf
in High Voltage
ISOPLUS i4-PACTM
=
=
=
=
7A
1400/1600 V
4.9V
40 ns
Monolithic Bipolar MOS Transistor
1
5
Features
IGBT
Conditions
VCES
TVJ = 25°C to 150°C
Maximum Ratings
IXBF 9N140
IXBF 9N160
VGES
IC25
IC90
TC = 25°C
TC = 90°C
ICM
VCEK
VGE = 15/0 V; RG = 100 W; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
Ptot
TC = 25°C
Symbol
Conditions
VCE(sat)
IC = 5 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
V
V
± 20
V
7
4
A
A
12
0.8VCES
A
70
W
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VGE(th)
IC = 0.5 mA; VGE = VCE
ICES
VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IGES
1400
1600
4.9
5.6
4
7
8
V
0.1
mA
mA
500
nA
0.1
VCE = 0 V; VGE = ± 20 V
V
V
td(on)
tr
td(off)
tf
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 5 A
VGE = 15/0 V; RG = 100 W
200
60
180
40
ns
ns
ns
ns
C ies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 7 A
550
44
pF
nC
VF
(reverse conduction); IF = 5 A
3.6
V
RthJC
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
• ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
1.75 K/W
031
Symbol
1-4
IXBF 9N140
IXBF 9N160
Component
Symbol
Dimensions in mm (1 mm = 0.0394")
Conditions
Maximum Ratings
TVJ
Tstg
VISOL
IISOL £ 1 mA; 50/60 Hz
FC
mounting force with clip
Symbol
Conditions
dS,dA
dS,dA
C pin - E pin
pin - backside metal
RthCH
with heatsink compound
Weight
© 2000 IXYS All rights reserved
-55...+150
-55...+125
°C
°C
2500
V~
20...120
N
Characteristic Values
min.
typ. max.
7
5.5
mm
mm
0.15
K/W
9
g
2-4
IXBF 9N140
IXBF 9N160
30
30
VGE = 17V
TJ = 25°C
VGE = 17V
TJ = 125°C
15V
25
15V
25
13V
IC - Amperes
IC - Amperes
13V
20
15
10
20
15
10
5
5
0
0
0
2
4
6
8
10
12
14
16
0
18
2
4
6
8
10
12
14
16
18
VCE - Volts
VCE - Volts
Fig. 1 Typ. Output Characteristics
Fig. 2 Typ. Output Characteristics
30
30
VCE = 20V
25
25
TJ = 25°C
TJ = 125°C
IF - Amperes
IC - Amperes
TJ = 25°C
20
15
10
TJ = 125°C
20
15
10
5
5
0
0
4
6
8
10
12
0
14
2
4
6
8
10
VGE - Volts
VF - Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse
Conduction
16
15
VCE = 600V
IC = 5A
14
ICM - Amperes
VGE - Volts
12
10
8
6
10
TJ = 125°C
VCEK < VCES
5
IXBF 9N140
IXBF 9N160
4
2
0
0
10
20
30
40
50
QG - nanocoulombs
Fig. 5 Typ. Gate Charge characteristics
© 2000 IXYS All rights reserved
0
0
400
800
1200
1600
VCE - Volts
Fig. 6 Reverse Biased Safe Operating Area
RBSOA
3-4
IXBF 9N140
IXBF 9N160
70
250
VCE = 960V
VGE = 15V
td(off )- nanoseconds
tfi - nanoseconds
60 RG = 100W
TJ = 125°C
50
40
30
20
VCE = 960V
VGE = 15V
200 IC = 5A
TJ = 125°C
150
100
50
0
0
2
4
6
8
10
12
14
16
0
IC - Amperes
20
40
60
80
100 120 140 160
Rg - Ohms
Fig. 7 Typ. Fall Time
Fig. 8 Typ. Turn Off Delay Time
10
ZthJC - K/W
1
0.1
Single Pulse
0.01
0.001
0.0001
IXBF09
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Fig. 9 Typ. Transient Thermal Impedance
© 2000 IXYS All rights reserved
4-4
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