NTE NTE283 Silicon npn transistor horizontal output, switch Datasheet

NTE283
Silicon NPN Transistor
Horizontal Output, Switch
Description:
The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high–
speed, power switching in inductive circuits where fall time is critical. Typical applications include
switching regulators, PWM inverters, solenoid and relay drivers.
Absolute Maximum Ratings:
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (tp ≤ 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Power Dissipation (TC ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICES
VCEV = 800V, VBE = 0
–
–
1
mA
Emitter Cutoff Current
IEBO
VEB = 8V, IC = 0
–
–
1
mA
Collector–Base Voltage
VCBO
IC = 1mA, IE = 0
800
–
–
V
IC = 100mA, IB = 0, Note 1
325
–
–
V
Collector–Emitter Sustaining Voltage
VCEO(su
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 2.5A, Note 1
–
–
3.3
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 8A, IB = 2.5A, Note 1
–
–
2.2
V
VCE = 10V, IC = 2.5A, Note 1
15
–
–
VCE = 10V, IC = 500mA
–
10
–
MHz
VCE = 25V, Note 2
4
–
–
A
s)
DC Current Gain
Current Gain–Bandwidth Product
Second Breakdown Collector Current
hFE
fT
IS/b
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 1.5%.
Note 2. Pulsed: 1sec, non–repetitive pulse.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Turn–On Time
ton
VCC = 250V, IC = 5A, IB1 = 1A
–
0.2
–
µs
Storage Time
ts
–
1.7
–
µs
Fall Time
tf
VCC = 250V, IC = 5A,
IB1 = –IB2 = 1A
–
0.3
–
µs
Fall Time
tf
VCC = 40V, IC = 8A,
IB1 = –IB2 = 2.5A
–
–
1.0
µs
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
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