Sanken FMX-G26S Ultrafast recovery diode Datasheet

Ultrafast Recovery Diode
FMXA-1106S
■General Description
November, 2005
■Package---TO220F-2Pin
Shorter trr at high temperature has been realized by employing
the new life time control technology.
This is the optimum characteristic as a fast recovery diode
(FRD) for a continuous-current-mode PFC circuit.
■Applications
■Key Specifications
● PDP panel driver circuit.
● Continuous-current-mode PFC circuit.
● An output rectifier for SMPS, UPS, DC-DC converter.
●Absolute maximum ratings
Parameter
Symbol
Unit
Rating
Transient Peak Reverse Voltage
VRSM
V
600
Peak Reverse Voltage
VRM
V
600
Average Forward Current
IF(AV)
A
10
Peak Surge Forward Current
IFSM
A
100
● A Flywheel diode for the inverter and chopper.
■Features
●Electrical characteristics
● The shortest trr characteristic in the world at high
temperature (100°C).
Realized to shorten the trr at 100°C by 26% compared to
the conventional device.
(73ns => 54ns (typ), IF=IRP=500/500mA. Compared to
the SK’s conventional device FMX-G26S)
Parameter
Symbol Unit
Rating
Conditions
Forward Voltage Drop
VF
V
1.98 max. IF=10A
Reverse Leakage Current
IR
μA
100 max. VR=VRM
Reverse Leakage Current
Under High Temperature
H•IR
mA
30 max.
Reverse Recovery Time
trr
ns
28 max.
VR=VRM,
Tj=150°C
IF=IRP=500mA
90%Recovery point
Typical Current Waveform, mounted on the power supply
FMX-G26S (Conventional device)
IRP
Qrr
FMXA-1106S (New device)
trr = 65ns
IRP = 7.07A
Qrr = 229.1nC
IRP
Measurement condition: FCC power supply, f=160kHz, Load 5A (DC12V)
Qrr
trr = 50ns
IRP = 5.85A
Qrr = 147.3nC
Horiz:40ns/div, Vert:2A/div
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D01-002EA-051128
Ultrafast Recovery Diode
FMXA-1106S
November, 2005
Die Structure: Silicon Planer Diode (FRD)
§1. Absolute Maximum Ratings and Electrical Characteristics
•Absolute Maximum Ratings
No.
Item
Symbol
Unit
Rating
Conditions
1
Transient Peak Reverse Voltage
VRSM
V
600
2
Peak Reverse Voltage
VRM
V
600
3
Average Forward Current
IF(AV)
A
10
4
Peak Surge Forward Current
IFSM
A
100
10msec. Half sine-wave, one shot
2
2
1msec ≤ t ≤ 10msec
2
5
I t Limiting Value
It
AS
50
6
Junction Temperature
Tj
°C
-40 to +150
7
Storage Temperature
Tstg
°C
-40 to+150
Symbol
Unit
Rating
• Electrical Characteristics
No.
Item
Conditions
1
Forward Voltage Drop
VF
V
1.98 max.
IF=10A
2
Reverse Leakage Current
IR
µA
100 max.
VR=VRM
H•IR
mA
30 max.
trr
ns
28 max
Rth(j-c)
°C/W
4.0 max.
3
Reverse Leakage Current Under
High Temperature
4
Reverse Recovery Time
5
Thermal Resistance
VR=VRM, Tj=150°C
IF=IRP=500mA
90% Recovery point
Between Junction and case
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Ultrafast Recovery Diode
FMXA-1106S
November, 2005
§2. Package information
2-1 Package type, physical dimensions and material
4.4 4.0
*1
*2
*3
1.35
13.5±0.5
3.9
0.8
16.9
φ3.3
4.2
2.8
C0.5
10.0
0.85
0.45
+0.2
-0.1
指示なき公差±0.2
tolerance:
±0.2
tolerance±0.2
5.08
2.4
Unit: ㎜
2-2 Marking
Marking
Part Number
Type Name
Polarity
Lot number
1st letter: Last digit of year
FMXA-1106S
XA1106
2nd letter: Month From 1 to 9 for Jan. to Sep.,
O for Oct., N for Nov., D for Dec.
S
3rd & 4th letter: Day
e.g.: 5O06 (October 6, 2005)
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Ultrafast Recovery Diode
FMXA-1106S
November, 2005
§3. Characteristics
IF(AV) - PF
Forward Power Dissipation PF (W)
35
Tj=150°C
t/T=1/6
30
25
t
T
t/T=1/3,Sine-wave
20
t/T=1/2
15
10
DC
5
0
0
2
4
6
8
10
Average Forward Current IF(AV) (A)
V R - PR
Reverse Power Dissipation PR (W)
14
Tj=150°C
12
10
1-t/T=5/6
t
T
1-t/T=2/3
8
6
1-t/T=1/2
4
2
Sine-wave
0
0
100
200
300
400
500
600
Reverse Voltage VR (V)
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Ultrafast Recovery Diode
FMXA-1106S
November, 2005
§4. Derating
Tc - IF(AV)
VR=0 (V)
10
Average Forward Current
IF(AV) (A)
DC
8
t/T=1/2
t/T=1/3, Sine-wave
6
t/T=1/6
4
Tj=150°C
2
t
T
0
0
50
100
150
Case Temperature Tc (°C)
Tc - IF(AV)
VR=600 (V)
Average Forward Current
IF(AV) (A)
10
D.C.
8
Sine wave
6
t/T=1/6
4
Tj=150°C
t/T=1/2
t/T=1/3
2
t
T
0
0
50
100
150
Case Temperature Tc (°C)
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Ultrafast Recovery Diode
FMXA-1106S
November, 2005
<Worldwide Contacts>
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262
Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.
Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: 86-21-5208-1177
Fax: 86-21-5208-1757
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161
Fax: 886-2-2356-8261
India
Saket Devices Pvt. Ltd.
Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India
Tel: 91-20-5621-2340
91-20-2528-5449
Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters
Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Tel: 81-3-3986-6164
Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700
Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West, Singapore 189720
Tel: 65-6291-4755
Fax: 65-6297-1744
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Ultrafast Recovery Diode
FMXA-1106S
November, 2005
Europe
United Kingdom
Sanken Power Systems (UK) Limited
Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK
Tel: 44-1656-869-100
Fax: 44-1656-869-162
North America
United States
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000
Fax: 1-508-853-3353
Allegro MicroSystems, Inc. (Southern California)
14 Hughes Street, Suite B105, Irvine, CA 92618
Tel: 1-949-460-2003
Fax: 1-949-460-7837
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Ultrafast Recovery Diode
FMXA-1106S
November, 2005
CAUTION / WARNING
●The information in this publication has been carefully checked and is believed to be accurate; however, no
responsibility is assumed for inaccuracies.
● Sanken reserves the right to make changes without further notice to any products herein in the interest of
improvements in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify
that the information being relied upon is current.
● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use
of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights,
intellectual property rights or any other rights of Sanken or any third party which may result from its use.
● When using the products herein, the applicability and suitability of such products for the intended purpose or object
shall be reviewed at the users’ responsibility.
● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect
of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own
risk, preventative measures including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
● Sanken products listed in this catalog are designed and intended for the use as components in general purpose
electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring
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is strictly prohibited.
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