NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U █ APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-251 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………20W VCBO ——Collector-Base Voltage………………………………100V 1―Base，B 2―Collector，C 3―Emitter，E VCEO ——Collector-Emitter Voltage……………………………100V VE B O —— Emitter - Base Voltage………………………………5 V IC——Collector Current（DC）………………………………………5A ICP ——Collector Current（Pulse）……………………………………8A Ib——Base Current………………………………………………120mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage １００ Ｖ IC=1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage １００ Ｖ IC=5mA, IB=0 HFE（1） DC Current Gain １０００ VCE=3V, IC=0.5A HFE（2） １０００ VCE=3V, IC=3A VCE(sat1) Collector- Emitter Saturation Voltage ２．０ Ｖ IC=3A, IB =12mA VCE(sat2) Collector- Emitter Saturation Voltage ４．０ Ｖ IC=3A, IB =20mA VBE(ON) Base-Emitter On Voltage ２．５ Ｖ VCE=3V, IC=3A ICEO Collector Cut-off Current ０．５ ｍＡ VCB=50V, IB=0 ICBO Collector Cut-off Current ０．２ ｍＡ VCB=100V, IE=0 IEBO Emitter Cut-off Current Output Capacitance ｍＡ ｐＦ VEB=5V, IC=0 Cob ２．０ ２００ VCB=10V, IE=0，f=0.1ＭＨｚ NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U