Vishay ICTE12 Transzorb transient voltage suppressor Datasheet

ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
Case Style 1.5KE
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
VBR (uni-directional)
6.0 V to 21.2 V
VBR (bi-directional)
9.2 V to 21.2 V
PPPM
1500 W
PD
6.5 W
IFSM
200 A
TJ max.
175 °C
Polarity
Uni-directional, bi-directional
Package
1.5KE
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Base P/NHE3 - RoHS compliant and AEC-Q101 qualified
DEVICES FOR BI-DIRECTION APPLICATIONS
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
PPPM
1500
W
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
IPPM
See next table
A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
PD
6.5
W
IFSM
200
A
VF
3.5
V
TJ, TSTG
- 55 to + 175
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
Revision: 18-Sep-12
Document Number: 88356
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
CLAMPING
VOLTAGE AT
IPP = 10 A
VC (V)
MAXIMUM
PEAK
PULSE
CURRENT
IPP (A)
7.1
7.5
160
11.3
11.5
100
13.7
14.1
90
2.0
16.1
16.5
70
2.0
20.1
20.6
60
21.2
2.0
24.2
25.2
50
STAND-OFF
VOLTAGE
VWM (V)
MINIMUM
BREAKDOWN
VOLTAGE
AT 1.0 mA
VBR (V)
ICTE5 (2)
5.0
6.0
300
1N6374
ICTE8
8.0
9.4
25.0
1N6375
ICTE10
10.0
11.7
2.0
1N6376
ICTE12
12.0
14.1
1N6377
ICTE15
15.0
17.6
1N6378
ICTE18
18.0
JEDEC
TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
MAXIMUM
CLAMPING
VOLTAGE
AT IPP = 1.0 A
VC (V)
UNI-DIRECTIONAL TYPES
1N6373 (2)
BI-DIRECTIONAL TYPES
1N6382
ICTE8C
8.0
9.4
50
11.4
11.6
100
1N6383
ICTE10C
10.0
11.7
2.0
14.1
14.5
90
1N6384
ICTE12C
12.0
14.1
2.0
16.7
17.1
70
1N6385
ICTE15C
15.0
17.6
2.0
20.8
21.4
60
1N6386
ICTE18C
18.0
21.2
2.0
24.8
25.5
50
Notes
(1) “C” suffix indicates bi-directional
(2) ICTE5 and 1N6373 are not available as bi-directional
(3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual V (clamping voltage) to the V
C
BR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ICTE5-E3/54
0.968
54
1400
13" diameter paper tape and reel
ICTE5HE3/54 (1)
0.968
54
1400
13" diameter paper tape and reel
Note
(1) AEC-Q101 qualified
Revision: 18-Sep-12
Document Number: 88356
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
10
1
Measured at
Zero Bias
10 000
Measured at Stand-Off
Voltage VWM
1000
0.1
100
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
100
200
VBR - Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance Uni-Directional
100
100 000
CJ - Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
10
1.0
td - Pulse Width (s)
75
50
25
Measured at
Zero Bias
Bi-Directional Type
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10 000
1000
Measured at Stand-Off
Voltage VWM
100
0
0
25
50
75
100
125
150
175
1.0
200
TJ - Initial Temperature (°C)
150
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
100
200
Fig. 5 - Typical Junction Capacitance
IFSM - Peak Forward Surge Current (A)
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
10
VBR - Breakdown Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
IPPM - Peak Pulse Current, % IRSM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10/1000 µs Waveform
as defined by R.E.A.
td
0
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
10
0
1.0
2.0
3.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 18-Sep-12
4.0
1
5
10
50
100
Number of Cycles at 60 Hz
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Document Number: 88356
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
8.0
Uni-Directional Only
TA = 25 °C
PD - Power Dissipation (W)
7.0
ICTE18
ICTE15
ICTE12
ICTE10
ICTE8
10
ICTE5
IPP - Peak Pulse Current (A)
50
6.0
5.0
4.0
3.0
L = 0.375" (9.5 mm)
Lead Lengths
2.0
1.0
1
0
6
8
10
12
14
16
18
20
22
24
26
28
0
25
50
75
100
125
150
175
VC - Clamping Voltage (V)
TL - Lead Temperature (°C)
Fig. 7 - Typical Characteristics Clamping Voltage
Fig. 8 - Power Derating Curve
200
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Revision: 18-Sep-12
Document Number: 88356
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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