PHILIPS BZB784-C12 Voltage regulator double diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BZB784 series
Voltage regulator double diodes
Product specification
Supersedes data of 2000 May 24
2001 Feb 27
Philips Semiconductors
Product specification
Voltage regulator double diodes
BZB784 series
FEATURES
PINNING SOT323 (SC-70)
• Total power dissipation: max. 350 mW
PIN
DESCRIPTION
• Approx. 5% VZ tolerance
1
cathode
• Working voltage range: nom. 2.4 to 15 V (E24 range).
2
cathode
3
common anode
APPLICATIONS
• General regulation functions
handbook, halfpage
• ESD and surge protection.
3
3
DESCRIPTION
1
2
Low-power voltage regulator diodes in a small SOT323
(SC-70) package.
1
2
MAM407
Top view
Fig.1 Simplified outline and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZB784-C2V4
91
BZB784-C3V9
96
BZB784-C6V2
9B
BZB784-C10
9G
BZB784-C2V7
92
BZB784-C4V3
97
BZB784-C6V8
9C
BZB784-C11
9H
BZB784-C3V0
93
BZB784-C4V7
98
BZB784-C7V5
9D
BZB784-C12
9J
BZB784-C3V3
94
BZB784-C5V1
99
BZB784-C8V2
9E
BZB784-C13
9K
BZB784-C3V6
95
BZB784-C5V6
9A
BZB784-C9V1
9F
BZB784-C15
9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
IF
continuous forward current
IZSM
non-repetitive peak reverse current
Ptot
total power dissipation; note 1
CONDITIONS
MIN.
−
MAX.
200
tp = 100 µs; square wave;
Tamb = 25 °C; prior to surge
see Table 1
UNIT
mA
Tamb = 25 °C; 2 diodes loaded
−
350
mW
Tamb = 25 °C; 1 diode loaded
−
180
mW
tp = 100 µs; square wave;
Tamb = 25 °C; prior to surge
−
40
W
PZSM
non-repetitive peak reverse
dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2001 Feb 27
2
Philips Semiconductors
Product specification
Voltage regulator double diodes
BZB784 series
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
VALUE
UNIT
2 diodes loaded; note 1
140
K/W
1 diode loaded; note 1
265
K/W
2 diodes loaded; note 2
355
K/W
1 diode loaded; note 2
680
K/W
Notes
1. Solder points on cathode tabs.
2. Device mounted on a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Total BZB784-C series
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
2001 Feb 27
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
BZB784-C2V4
VR = 1 V
50
µA
BZB784-C2V7
VR = 1 V
20
µA
BZB784-C3V0
VR = 1 V
10
µA
BZB784-C3V3
VR = 1 V
5
µA
BZB784-C3V6
VR = 1 V
5
µA
BZB784-C3V9
VR = 1 V
3
µA
BZB784-C4V3
VR = 1 V
3
µA
BZB784-C4V7
VR = 2 V
3
µA
BZB784-C5V1
VR = 2 V
2
µA
BZB784-C5V6
VR = 2 V
1
µA
BZB784-C6V2
VR = 4 V
3
µA
BZB784-C6V8
VR = 4 V
2
µA
BZB784-C7V5
VR = 5 V
1
µA
BZB784-C8V2
VR = 5 V
700
nA
BZB784-C9V1
VR = 6 V
500
nA
BZB784-C10
VR = 7 V
200
nA
BZB784-C11
VR = 8 V
100
nA
BZB784-C12
VR = 8 V
100
nA
BZB784-C13
VR = 8 V
100
nA
BZB784-C15
VR = 10.5V
50
nA
3
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Tol. ≈5%
DIFFERENTIAL RESISTANCE
rdif (Ω)
at IZ = 1 mA
MIN.
MAX.
TYP.
MAX.
2V4
2.2
2.6
275
600
2V7
2.5
2.9
300
3V0
2.8
3.2
325
3V3
3.1
3.5
3V6
3.4
3V9
3.7
4V3
at IZ = 5 mA
TYP.
TEMP.
DIODE CAP.
COEFFICIENT
Cd (pF)
SZ (mV/K)
at f = 1 MHz;
at IZtest = 5 mA
VR = 0 V
(see Figs 3 and 4)
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
Tamb = 25 °C
4
TYP.
MAX.
MAX.
70
100
−1.3
450
6.0
600
75
100
−1.4
450
6.0
600
80
95
−1.6
450
6.0
350
600
85
95
−1.8
450
6.0
3.8
375
600
85
90
−1.9
450
6.0
4.1
400
600
85
90
−1.9
450
6.0
4.0
4.6
410
600
80
90
−1.7
450
6.0
4V7
4.4
5.0
425
500
50
80
−1.2
300
6.0
5V1
4.8
5.4
400
480
40
60
−0.5
300
6.0
5V6
5.2
6.0
80
400
15
40
1.0
300
6.0
6V2
5.8
6.6
40
150
6
10
2.2
200
6.0
6V8
6.4
7.2
30
80
6
15
3.0
200
6.0
7V5
7.0
7.9
30
80
6
15
3.6
150
4.0
8V2
7.7
8.7
40
80
6
15
4.3
150
4.0
9V1
8.5
9.6
40
100
6
15
5.2
150
3.0
10
9.4
10.6
50
150
8
20
6.0
90
3.0
11
10.4
11.6
50
150
10
20
6.9
90
2.5
12
11.4
12.7
50
150
10
25
7.9
85
2.5
13
12.4
14.1
50
170
10
30
8.8
80
2.5
15
13.8
15.6
50
200
10
30
10.7
75
2.0
Product specification
BZB784 series
MAX.
Philips Semiconductors
BZB784-C
XXX
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA
Voltage regulator double diodes
2001 Feb 27
Table 1 Per type BZB784-C2V4 to C15
Tj = 25 °C; unless otherwise specified.
Philips Semiconductors
Product specification
Voltage regulator double diodes
BZB784 series
GRAPHICAL DATA
MLD362
300
MLD363
0.5
handbook, halfpage
handbook, halfpage
SZ
(mV/K)
IF
(mA)
4V7
0
4V3
200
−0.5
2V4
2V7
3V9
−1
100
3V6
−1.5
0
0.6
0.7
0.8
0.9
VF (V)
3V3
3V0
−2
10−1
1
Tj = 25 °C.
BZB784-C2V4 to C4V7.
Tj = 25 to 150 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MLD364
12
handbook, halfpage
15
SZ
(mV/K)
13
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
8
4
0
−4
10−1
1
10
IZ (mA)
102
BZB784-C5V1 to C15.
Tj = 25 to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
2001 Feb 27
5
1
10
IZ (mA)
102
Temperature coefficient as a function of
working current; typical values.
Philips Semiconductors
Product specification
Voltage regulator double diodes
BZB784 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 Feb 27
REFERENCES
IEC
JEDEC
EIAJ
SC-70
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
Voltage regulator double diodes
BZB784 series
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
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these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Feb 27
7
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Date of release: 2001
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