ON MJF15031 Complementary silicon power transistors 8 amperes 150 volts, 36 watt Datasheet

MJF15030 (NPN),
MJF15031 (PNP)
Complementary Power
Transistors
For Isolated Package Applications
Designed for general−purpose amplifier and switching applications,
where the mounting surface of the device is required to be electrically
isolated from the heatsink or chassis.
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COMPLEMENTARY SILICON
POWER TRANSISTORS
8 AMPERES
150 VOLTS, 36 WATTS
Features
•
•
•
•
•
•
•
•
Electrically Similar to the Popular MJE15030 and MJE15031
150 VCEO(sus)
8 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High Current Gain−Bandwidth Product −
fT = 30 MHz (Min) @ IC
= 500 mAdc
UL Recognized, File #E69369, to 3500 VRMS Isolation
Pb−Free Packages are Available*
MARKING
DIAGRAM
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MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
RMS Isolation Voltage (Note 1)
Test No. 1 Per Figure 11
Test No. 2 Per Figure 12
Test No. 3 Per Figure 13
(for 1 sec, R.H. < 30%, TA = 25_C)
Collector Current
− Continuous
− Peak
Symbol
Value
Unit
VCEO
150
Vdc
VCB
150
Vdc
VEB
5
VISOL
IC
1
2
TO−220 FULLPACK
CASE 221D
STYLE 2
3
MJF1503xG
AYWW
Vdc
VRMS
4500
3500
1500
8
16
Adc
MJF1503x = Specific Device Code
x = 0 or 1
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
Base Current
IB
2
Adc
Total Power Dissipation (Note 2) @ TC = 25_C
Derate above 25_C
PD
36
0.016
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
TJ, Tstg
–65 to +150
_C
Device
Package
Shipping
Symbol
Max
Unit
MJF15030
TO−220 FULLPACK
50 Units/Rail
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
MJF15030G
Thermal Resistance, Junction−to−Case (Note 2)
RqJC
3.5
_C/W
TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
MJF15031
TO−220 FULLPACK
50 Units/Rail
MJF15031G
TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Lead Temperature for Soldering Purposes
TL
260
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
1
Publication Order Number:
MJF15030/D
MJF15030 (NPN), MJF15031 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
150
−
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
ICEO
−
10
mAdc
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
ICBO
−
10
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
−
10
mAdc
DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc)
(IC = 2 Adc, VCE = 2 Vdc)
(IC = 3 Adc, VCE = 2 Vdc)
(IC = 4 Adc, VCE = 2 Vdc)
hFE
40
40
40
20
−
−
−
−
−
DC Current Gain Linearityy
(VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP)
hFE
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
ON CHARACTERISTICS (Note 3)
Typ
2
3
Collector−Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.1 Adc)
VCE(sat)
−
0.5
Vdc
Base−Emitter On Voltage
(IC = 1 Adc, VCE = 2 Vdc)
VBE(on)
−
1
Vdc
fT
30
−
MHz
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. fT = ⎪hfe⎪• ftest.
1
0.5
0.3
0.2
SINGLE PULSE
RqJC(t) = r(t) RqJC
TJ(pk) − TC = P(pk) RqJC(t)
0.1
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
t, TIME (ms)
100
Figure 1. Thermal Response
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2
200 300
500
1K
2K 3K
5K
10K
MJF15030 (NPN), MJF15031 (PNP)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 2 and 3 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMP)
20
10
100 ms
5
3
2
5 ms
dc
1
0.5
0.3
0.2
WIREBOND LIMIT
THERMAL LIMIT
SECONDARY BREAKDOWN
LIMIT @ TC = 25°C
0.1
0.05
0.03
0.02
3
2
50 70 100 150 200
5
7 10
20 30
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Forward Bias Safe Operating Area
1000
Cib (NPN)
500
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (AMP)
8
5
3
VBE(off) = 9 V
IC/IB = 10
TC = 25°C
2
1
0
0
Cib (PNP)
200
100
Cob (PNP)
50
30
5V
3V
1.5 V
0V
100 110 120 130 140 150
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Cob (NPN)
20
10
1.5
3
hfe , SMALL−SIGNAL CURRENT GAIN
100
50
30
PNP
VCE = 10 V
IC = 0.5 A
TC = 25°C
20
NPN
10
5
0.5
0.7
1
2
3
5
7
100 150
Figure 4. Capacitances
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
Figure 3. Reverse Bias Switching Safe
Operating Area
5 7 10
30
50
VR, REVERSE VOLTAGE (VOLTS)
10
100
90
(PNP)
60
(NPN)
50
20
10
0
0.1
0.2
0.5
1
2
5
f, FREQUENCY (MHz)
IC, COLLECTOR CURRENT (AMP)
Figure 5. Small−Signal Current Gain
Figure 6. Current Gain — Bandwidth Product
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3
10
MJF15030 (NPN), MJF15031 (PNP)
DC CURRENT GAIN
1K
1K
VCE = 2 V
500
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
500
TJ = 150°C
200
150
TJ = 25°C
100
70
50
TJ = −55°C
30
VCE = 2 V
TJ = 150°C
200
TJ = 25°C
100
TJ = −55°C
50
20
20
10
0.1
0.2
0.5
2
1
5
10
0.1
10
0.2
0.5
1
2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 7a. MJF15030 NPN
5
10
Figure 7b. MJF15031 PNP
“ON” VOLTAGE
1.8
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
1
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 2 V
1.4
1
0.8
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 20
0.4
VCE(sat) @ IC/IB = 20
0.2
0.1
0.2
0.5
VBE(sat) @ IC/IB = 20
IC/IB = 10
1
2
5
0
0.1
10
2
5
10
Figure 8b. MJF15031 PNP
1
10
VCC = 80 V
IC/IB = 10
TJ = 25°C
0.5
3
td (NPN, PNP)
0.2
tr (PNP)
0.1
VCC = 80 V
IC/IB = 10, IB1 = IB2
ts (NPN) TJ = 25°C
5
t, TIME (s)
μ
t, TIME (s)
μ
1
IC, COLLECTOR CURRENT (AMP)
Figure 8a. MJF15030 NPN
0.05
2
ts (PNP)
1
0.5
tf (PNP)
tr (NPN)
0.03
0.2
0.02
0.01
0.1
0.5
0.2
IC, COLLECTOR CURRENT (AMP)
IC/IB = 10
0.2
0.5
1
2
5
0.1
0.1
10
IC, COLLECTOR CURRENT (AMP)
tf (NPN)
0.2
0.3
0.5
1
2
IC, COLLECTOR CURRENT (AMP)
Figure 9. Turn−On Times
Figure 10. Turn−Off Times
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4
5
10
MJF15030 (NPN), MJF15031 (PNP)
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
0.099" MIN
LEADS
LEADS
HEATSINK
0.099" MIN
LEADS
HEATSINK
HEATSINK
0.110" MIN
Figure 11. Clip Mounting Position
for Isolation Test Number 1
Figure 12. Clip Mounting Position
for Isolation Test Number 2
Figure 13. Screw Mounting Position
for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4−40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 14. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to
8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package
over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the
plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However,
in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
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5
MJF15030 (NPN), MJF15031 (PNP)
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE G
−T−
−B−
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D−01 THRU 221D−02 OBSOLETE, NEW
STANDARD 221D−03.
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
INCHES
MIN
MAX
0.625
0.635
0.408
0.418
0.180
0.190
0.026
0.031
0.116
0.119
0.100 BSC
0.125
0.135
0.018
0.025
0.530
0.540
0.048
0.053
0.200 BSC
0.124
0.128
0.099
0.103
0.101
0.113
0.238
0.258
MILLIMETERS
MIN
MAX
15.88
16.12
10.37
10.63
4.57
4.83
0.65
0.78
2.95
3.02
2.54 BSC
3.18
3.43
0.45
0.63
13.47
13.73
1.23
1.36
5.08 BSC
3.15
3.25
2.51
2.62
2.57
2.87
6.06
6.56
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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MJF15030/D
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