Infineon MMBTA42 Npn silicon high-voltage transistors low collector-emitter saturation voltage Datasheet

SMBTA42/MMBTA42
NPN Silicon High-Voltage Transistors
• Low collector-emitter saturation voltage
2
3
• Complementary types:
1
SMBTA92 / MMBTA92(PNP)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
SMBTA42/MMBTA42
Marking
s1D
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
300
Collector-base voltage
VCBO
300
Emitter-base voltage
VEBO
6
Collector current
IC
500
Base current
IB
100
Total power dissipation-
Ptot
360
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point 2)
Symbol
RthJS
V
mA
TS ≤ 74 °C
-65 ... 150
Value
≤ 210
Unit
K/W
1Pb-containing
2For
package may be available upon special request
calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-04-19
SMBTA42/MMBTA42
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 300
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
300
-
-
V(BR)EBO
6
-
-
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 200 V, IE = 0
-
-
0.1
VCB = 200 V, IE = 0 , T A = 150 °C
-
-
20
-
-
100
Emitter-base cutoff current
I EBO
nA
VEB = 5 V, IC = 0
DC current gain1)
-
h FE
IC = 1 mA, VCE = 10 V
25
-
-
IC = 10 mA, VCE = 10 V
40
-
-
IC = 30 mA, VCE = 10 V
40
-
-
VCEsat
-
-
0.5
VBEsat
-
-
0.9
50
70
-
MHz
-
-
3
pF
Collector-emitter saturation voltage1)
V
IC = 20 mA, IB = 2 mA
Base emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency
fT
IC = 10 MHz, VCE = 20 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 20 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
2
2007-04-19
SMBTA42/MMBTA42
DC current gain hFE = ƒ(IC)
VCE = 10 V
10 3
Operating range I C = ƒ(VCEO)
TA = 25°C, D = 0
SMBTA 42/43
EHP00844
10 3
SMBTA 42/43
EHP00841
mA
5
ΙC
h FE
10 2
10
10 µs
5
2
10 1
100 µs
1 ms
5
100 ms
5
10 1
500 ms
DC
10
5
0
5
10 0
-1
10
5 10
0
5 10
1
5 10
2
mA 10
10 -1
10 0
3
5
10 1
5
10 2
ΙC
Collector cutoff current ICBO = ƒ(TA)
VCBO = 160 V
VCE = 10V
SMBTA 42/43
EHP00843
10 4
nA
mA
SMBTA 42/43
EHP00842
ΙC
10
10 3
V CEO
Collector current I C = ƒ(VBE)
10 3
V 5
Ι CBO
2
max
10 3
5
5
10 2
5
10 1
5
typ
10 1
5
10 0
10 0
5
5
10 -1
10 -1
0
0.5
V
1.0
1.5
0
V BE
50
C 150
100
TA
3
2007-04-19
SMBTA42/MMBTA42
Transition frequency fT = ƒ(IC)
VCE = 10 V, f = 100 MHz
10 3
Collector-base capacitance Ccb = ƒ(V CB)
Emitter-base capacitance Ceb = ƒ(VEB)
SMBTA 42/43
EHP00839
90
pF
MHz
CCB(C EB)
fT
70
60
50
10
2
40
CEB
5
30
20
10
CCB
10
1
10 0
5
10 1
5
10 2 mA 5
0
0
10 3
4
8
12
16
V
22
VCB(VEB)
ΙC
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
400
mW
SMBTA 42/43
Ptot max
5
Ptot DC
EHP00840
D=
320
tp
T
280
Ptot
tp
T
10 2
240
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
200
160
10 1
120
5
80
40
0
0
15
30
45
60
75
90 105 120
°C
TS
10 0
10 -6
150
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
4
2007-04-19
Package SOT23
SMBTA42/MMBTA42
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
5
2007-04-19
SMBTA42/MMBTA42
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
6
2007-04-19
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