Dynex DS2906SZ38 Rectifier diode Datasheet

DS2906SZ
DS2906SZ
Rectifier Diode
Replaces July 2000 version, DS4186-4.1
DS4186-5.0 October 2001
FEATURES
KEY PARAMETERS
■
Double Side Cooling
VRRM 4000V
■
High Surge Capability
IF(AV) 5651A
IFSM
APPLICATIONS
■
Rectification
■
Freewheel Diode
■
DC Motor Control
■
Power Supplies
■
Welding
■
Battery Chargers
83000A
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DS2906SZ40
4000
DS2906SZ39
3900
DS2906SZ38
3800
DS2906SZ37
3700
DS2906SZ36
3600
DS2906SZ35
3500
Lower voltage grades available
Conditions
VRSM = VRRM + 100V
Outline type code: Z
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2906SZ39
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS2906SZ
CURRENT RATINGS
Tcase = 75oC unless otherwise stated
Symbol
Parameter
Conditions
Max.
Units
5651
A
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
8877
A
Continuous (direct) forward current
-
8208
A
3707
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
5821
A
Continuous (direct) forward current
-
4976
A
Conditions
Max.
Units
4350
A
IF
Half wave resistive load
Tcase = 100oC unless otherwise stated
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
6830
A
Continuous (direct) forward current
-
6160
A
2795
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
IF(RMS)
RMS value
-
4390
A
Continuous (direct) forward current
-
3640
A
IF
Half wave resistive load
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DS2906SZ
SURGE RATINGS
Parameter
Symbol
IFSM
I2t
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
Conditions
Max.
Units
10ms half sine; Tcase = 150oC
66.5
kA
VR = 50% VRRM - 1/4 sine
22.0 x 106
A2s
10ms half sine; Tcase = 150oC
83
kA
VR = 0
34.5 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
dc
-
0.0065
o
Anode dc
-
0.013
o
Cathode dc
-
0.013
o
C/W
Double side
-
0.001
o
C/W
Single side
-
0.002
o
C/W
Forward (conducting)
-
160
o
Reverse (blocking)
-
150
o
Storage temperature range
–55
150
o
Clamping force
75.0
91.0
kN
Min.
Max.
Units
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 83.0kN
with mounting compound
C
Virtual junction temperature
C
C
CHARACTERISTICS
Symbol
Parameter
Conditions
VFM
Forward voltage
At 3000A peak, Tcase = 25oC
-
1.06
V
IRM
Peak reverse current
At VRRM, Tcase = 150oC
-
400
mA
VTO
Threshold voltage
At Tvj = 150˚C
-
0.78
V
Slope resistance
At Tvj = 150˚C
-
0.0763
mΩ
rT
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DS2906SZ
CURVES
8000
7000
6000
6000
Mean power dissipation - (W)
Instantaneous forward current, IF - (A)
7000
5000
4000
Tj = 150˚C
3000
Tj = 25˚C
5000
4000
3000
2000
2000
0
0.5
dc
1/2 wave
3 phase
6 phase
1000
1000
0
0.6
0.7
0.8
0.9
1
1.1
1.2
Instantaneous forward voltage, VF - (V)
1.3
0
1.4
VFM = A + Bln (IF) + C.IF+D.√IF
2000
3000
4000
5000
6000
Mean on-state current, IT(AV) - (A)
Fig. 2 Maximum (limit) forward characteristics
VFM Equation:-
1000
Fig. 3 Power loss curves
Where
A = –0.01591
B = 0.113682
C = 8.04 x 10–5
D = –0.00284
these values are valid for Tj = 125˚C for IF 500A to 7000A
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DS2906SZ
350
14000
300
Reverse recovery current, IRR - (A)
16000
Stored charge, Qs - (µC)
12000
10000
8000
6000
4000
250
200
150
100
50
2000
0
0
1
2
3
4
5
6
7
Rate of decay of forward current, dIf/dt - (A/µs)
8
Fig. 4 Stored charge
0.1
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0
0
1
2
3
4
5
6
7
Rate of decay of forward current, dIf/dt - (A/µs)
8
Fig. 5 Reverse recovery current
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0065
0.0072
0.0073
0.0076
Single side
0.013
0.0137
0.0138
0.0141
Thermal impedance - (˚C/W)
Anode side cooled
0.01
Double side cooled
0.001
0.0001
0.001
0.01
0.1
1
Time - (s)
10
100
Fig. 6 Maximum (limit) transient thermal impedance junction to case - (˚C/W)
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DS2906SZ
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Holes Ø3.6 ± 0.5 x 2.0 deep
(One in each electrode)
Cathode
Ø151 max
37.5 max
Ø100
Ø100
Ø148 max
Anode
Nominal weight: 2800g
Clamping force: 83kN ±10%
Package outline type code: Z
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DS2906SZ
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4186-5 Issue No. 5.0 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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