New Product SB1H90, SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Very low leakage current • High forward surge capability DO-204AL (DO-41) • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 90 V, 100 V IFSM 50 A VF 0.62 V IR 1.0 μA TJ max. 175 °C For use in middle voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SB1H90 SB1H100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum RMS voltage VRMS 63 70 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A TJ 175 °C TSTG - 55 to + 175 °C Maximum operating junction temperature Storage temperature range Document Number: 88716 Revision: 04-Aug-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product SB1H90, SB1H100 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A Maximum instantaneous forward voltage IF = 2.0 A SYMBOL TJ = 25 °C SB1H100 UNIT 0.77 TJ = 125 °C 0.62 VF (1) TJ = 25 °C V 0.86 TJ = 125 °C 0.70 TJ = 25 °C Maximum reverse current at rated VR SB1H90 IR (2) TJ = 125 °C 1.0 μA 0.5 mA Notes (1) Pulse test: 300 ms pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance SB1H90 SB1H100 RθJA (1) 57 RθJL (1) 15 UNIT °C/W Note P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB1H100-E3/54 0.34 54 5500 13" diameter paper tape and reel SB1H100-E3/73 0.34 73 3000 Ammo pack packaging SB1H100HE3/54 (1) 0.34 54 5500 13" diameter paper tape and reel (1) 0.34 73 3000 Ammo pack packaging SB1H100HE3/73 Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 25 °C 0.01 0 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88716 Revision: 04-Aug-09 New Product SB1H90, SB1H100 Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (μA) 10 000 1000 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 40 60 80 1 0.1 0.01 0.01 20 10 100 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 3 - Typical Reverse Characteristics Fig. 5 - Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Document Number: 88716 Revision: 04-Aug-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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