Panasonic MA121 Silicon epitaxial planar type Datasheet

Switching Diodes
MA6X121
Silicon epitaxial planar type
Unit : mm
+ 0.25
0.65 ± 0.15
1.5 − 0.05
+ 0.2
2.9 − 0.05
1.9 ± 0.2
0.95
0.95
0.3 − 0.05
1
+ 0.1
6
+ 0.1
0.65 ± 0.15
5
2
4
3
1.45 ± 0.1
2.8
• Three-element contained in one package, allowing high-density
mounting
• Short reverse recovery time trr
• Small terminal capacitance, Ct
0.5 − 0.05
■ Features
+ 0.2
− 0.3
VR
80
V
Peak reverse voltage
VRM
80
V
Forward current (DC)*1
IF
100
mA
Peak forward current*1
IFM
225
mA
Non-repetitive peak forward
surge current*1,2
IFSM
500
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
+ 0.1
Reverse voltage (DC)
0.16 − 0.06
Unit
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Rating
0.8
Symbol
+ 0.2
Parameter
1.1 − 0.1
■ Absolute Maximum Ratings Ta = 25°C
1 : Cathode 1
2 : Cathode 2
3 : Cathode 3
4 : Anode 3
5 : Anode 2
6 : Anode 1
Mini Type Package (6-pin)
Marking Symbol: M2D
Note) *1 : Value for single diode
*2 : t = 1 s
Internal Connection
6
1
5
2
4
3
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 75 V
100
nA
Forward voltage (DC)
VF
IF = 100 mA
1.2
V
Reverse voltage (DC)
VR
IR = 100 µA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
2
pF
Reverse recovery time*
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
3
ns
80
V
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MA6X121
Switching Diodes
IF  VF
IR  V R
1 000
100
100
10
VF  Ta
1.6
1.4
Ta = 150°C
100°C
10
25°C
− 20°C
1
0.1
Forward voltage VF (V)
Reverse current IR (µA)
Forward current IF (mA)
Ta = 150°C
100°C
1
0.1
25°C
1.2
1.0
IF = 100 mA
0.8
10 mA
0.6
3 mA
0.4
0.01
0.2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0
Forward voltage VF (V)
20
60
80
IR  Ta
VR = 75 V
1
0.1
0.01
40
80
120
160
2
200
1.2
1.0
0.8
0.6
0.4
0
0
20
40
60
80
120
160
200
IF(surge)  tW
0.2
Ambient temperature Ta (°C)
40
1 000
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
35 V
0
0
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
1.4
1V
0.001
−40
0
−40
120
Ct  VR
1.6
10
100
Reverse voltage VR (V)
100
Reverse current IR (µA)
40
80
100
Reverse voltage VR
(V)
120
Ta = 25°C
IF(surge)
300
tW
Non repetitive
100
30
10
3
1
0.3
0.1
0.03
0.1
0.3
1
3
Pulse width tW (ms)
10
30
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