IXYS IXFR58N20Q Hiperfet power mosfets isoplus247 q-class Datasheet

HiPerFETTM Power MOSFETs IXFR 58N20Q
ISOPLUS247TM Q-Class
(Electrically Isolated Back Surface)
VDSS =
=
ID25
RDS(on) =
200 V
50 A
Ω
40 mΩ
trr ≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
50
232
58
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
30
1.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
250
°C
2500
V~
5
g
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS
ISOPLUS 247TM
E153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
t = 1 min
Weight
z
z
z
z
z
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
IXYS advanced low Qg process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic diode
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
200
V
VGS(th)
VDS = VGS, ID = 4mA
2.0
4.0 V
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 29A
Note 2
© 2003 IXYS All rights reserved
z
z
z
z
z
±100 nA
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
TJ = 25°C
TJ = 125°C
25 µA
1 mA
z
40 mΩ
z
z
Easy assembly
Space savings
High power density
DS98591B(01/03)
IXFR 58N20Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 29A
Note 2
24
34
S
3600
pF
870
pF
Crss
280
pF
td(on)
20
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 29A
40
ns
td(off)
RG = 1.5 Ω (External),
40
ns
tf
13
ns
Qg(on)
98 140
nC
25
35
nC
45
70
nC
0.5
K/W
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 29A
Qgd
RthJC
RthCK
(TO-247)
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive, Note 1
VSD
IF = Is, VGS = 0 V, Note 2
0.15
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
t rr
QRM
ISOPLUS 247 OUTLINE
IF = Is, -di/dt = 100 A/µs, VR = 100 V
IRM
58
A
232
A
1.5
V
200
ns
0.7
µC
7
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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