Fairchild MCT5210 Low input current phototransistor optocoupler Datasheet

LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
Description
The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting
diode, coupled with an NPN phototransistor in a six pin dual-in-line package.
6
6
The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering
250% CTRCE(SAT) with 1 mA of LED input current. When an LED input
current of 1.6 mA is supplied data rates to 20K bits/s are possible.
1
1
The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an
external base to emitter resistor data rates of 100K bits/s can be achieved.
6
Features
1
•
•
•
•
•
•
High CTRCE(SAT) comparable to Darlingtons
CTR guaranteed 0°C to 70°C
High common mode transient rejection 5kV/µs
Data rates up to 150 kbits/s (NRZ)
Underwriters Laboratory (UL) recognized (file #E90700)
VDE recognized (file #94766)
– Add option 300 (e.g., MCT5211.300)
SCHEMATIC
ANODE 1
6 BASE
Applications
•
•
•
•
•
•
CATHODE 2
CMOS to CMOS/LSTTL logic isolation
LSTTL to CMOS/LSTTL logic isolation
RS-232 line receiver
Telephone ring detector
AC line voltage sensing
Switching power supply
5 COL
3
Parameters
4 EMITTER
Symbol
Device
Value
Units
Storage Temperature
TSTG
All
-55 to +150
°C
Operating Temperature
TOPR
All
-55 to +100
°C
Lead Solder Temperature
TSOL
All
260 for 10 sec
°C
PD
All
260
mW
3.5
mW/°C
Continuous Forward Current
IF
All
50
mA
Reverse Input Voltage
VR
All
6
V
TOTAL DEVICE
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
IF(pk)
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
PD
Derate Linearly From 25°C
All
3.0
A
All
75
mW
All
1.0
mW/°C
All
150
mA
All
150
mW
All
2.0
mW/°C
DETECTOR
Continuous Collector Current
IC
Detector Power Dissipation
PD
Derate Linearly from 25°C
© 2003 Fairchild Semiconductor Corporation
Page 1 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
Test Conditions
Symbol
Device
All
Min
Typ**
Max
1.25
1.5
Units
EMITTER
Input Forward Voltage
(IF = 5 mA)
VF
Forward Voltage Temp.
Coefficient
(IF = 2 mA)
∆VF
∆TA
All
Reverse Voltage
(IR = 10 µA)
VR
All
Junction Capacitance
(VF = 0 V, f = 1.0 MHz)
CJ
All
V
mV/
°C
-1.75
6
V
18
pF
DETECTOR
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IF = 0)
BVCEO
All
30
100
V
Collector-Base Breakdown Voltage
(IC = 10 µA, IF = 0)
BVCBO
All
30
120
V
Emitter-Base Breakdown Voltage
(IC = 10 µA, IF = 0)
BVEBO
All
5
10
V
Collector-Emitter Dark Current
(VCE = 10V, IF = 0, RBE = 1MΩ)
ICER
All
1
Capacitance
Collector to Emitter
(VCE = 0, f = 1 MHz)
CCE
All
10
pF
Collector to Base
(VCB = 0, f = 1 MHz)
CCB
All
80
pF
Emitter to Base
(VEB = 0, f = 1 MHz)
CEB
All
15
pF
100
nA
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Device
Min
Typ** Max
Units
Input-Output Isolation
Voltage(10)
(f = 60Hz, t = 1 min.)
VISO
All
5300
Vac(rms)
Isolation Resistance(10)
VI-O = 500 VDC, TA = 25°C
RISO
All
1011
Ω
VI-O = 0, f = 1 MHz
CISO
Isolation
Capacitance(9)
Common Mode Transient
VCM = 50 VP-P1, RL= 750Ω, IF = 0
Rejection – Output High
VCM = 50 VP-P , RL= 1KΩ, IF = 0
Common Mode Transient
VCM = 50 VP-P1, RL = 750Ω, IF =1.6mA
Rejection – Output Low
VCM = 50 VP-P1, RL= 1KΩ, IF = 5 mA
CMH
CML
All
MCT5210/11
MCT5200/01
MCT5210/11
MCT5200/01
0.7
pF
5000
V/µs
5000
V/µs
**All typical TA=25°C
© 2003 Fairchild Semiconductor Corporation
Page 2 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.)
DC Characteristics
Test Conditions
IF = 10 mA, VCE = 0.4 V
IF = 5 mA, VCE = 0.4 V
Saturated Current
IF = 3.0 mA, VCE = 0.4 V
Transfer Ratio(1)
(Collector to Emitter)
IF = 1.6 mA, VCE = 0.4 V
IF = 1.0 mA, VCE = 0.4 V
IF = 3.0 mA, VCE = 5.0 V
Current Transfer Ratio
I = 1.6 mA, VCE = 5.0 V
(Collector to Emitter)(1) F
IF = 1.0 mA, VCE = 5.0 V
IF = 10 mA, VCB = 4.3 V
IF = 5 mA, VCB = 4.3 V
Current Transfer Ratio
IF = 3.0 mA, VCE = 4.3 V
Collector to Base(2)
IF = 1.6 mA, VCE = 4.3 V
IF = 1.0 mA, VCE = 4.3 V
IF = 10 mA, ICE = 7.5 mA
IF = 5 mA, ICE = 6 mA
Saturation Voltage
IF = 3.0 mA, ICE = 1.8 mA
IF = 1.6 mA, ICE = 1.6 mA
AC Characteristics
Propagation Delay
High to Low(3)
VCE = 0.4V, VCC = 5V,
RL = fig. 13, RBE = 330 kΩ
Propagation Delay
Low to High(4)
RL = 330 Ω, RBE = ∞
RL = 3.3 kΩ, RBE = 39 kΩ
RL = 750 Ω, RBE = ∞
RL = 4.7 kΩ, RBE = 91 kΩ
RL = 1.5 kΩ, RBE = ∞
RL = 10 kΩ, RBE = 160 kΩ
VCE = 0.4V, VCC = 5V,
RL = fig. 13, RBE = 330 kΩ
Delay Time(5)
Rise Time(6)
VCE = 0.4V,
RBE = 330 kΩ,
RL = 1 kΩ, VCC = 5V
VCE = 0.4V,
RBE = 330 kΩ,
RL = 1 kΩ, VCC = 5V
© 2003 Fairchild Semiconductor Corporation
Device
Min
CTRCE(SAT)
MCT5200
MCT5201
MCT5210
75
120
60
100
75
70
150
110
0.2
0.28
0.2
0.3
0.25
MCT5211
MCT5210
CTR(CE)
CTR(CB)
MCT5211
MCT5200
MCT5201
MCT5210
MCT5211
Test Conditions
RL = 330 Ω, RBE = ∞
RL = 3.3 kΩ, RBE = 39 kΩ
RL = 750 Ω, RBE = ∞
RL = 4.7 kΩ, RBE = 91 kΩ
RL = 1.5 kΩ, RBE = ∞
RL = 10 kΩ, RBE = 160 kΩ
Symbol
IF = 3.0 mA
VCC = 5.0 V
IF = 1.6mA
VCC = 5.0V
IF = 1.0mA
VCC = 5.0V
IF = 10mA
IF = 5mA
IF = 3.0 mA
VCC = 5.0 V
IF = 1.6mA
VCC = 5.0V
IF = 1.0mA
VCC = 5.0 V
IF = 10mA
IF = 5mA
IF = 10mA
IF = 5mA
VCE(SAT)
MCT5200
MCT5201
MCT5210
MCT5211
Symbol
Device
td
IF = 10mA
IF = 5mA
Page 3 of 11
tr
%
%
Typ
0.4
0.4
0.4
0.4
V
Max
Units
MCT5201
1.1
15
MCT5200
1.3
6
MCT5201
2.5
20
MCT5210
MCT5211
Units
%
MCT5200
MCT5201
MCT5200
MCT5211
MCT5200
MCT5201
TPLH
Max
10
7
14
15
17
24
1.6
3
0.4
8
2.5
11
7
16
18
12
0.5
MCT5210
TPHL
Min
Typ**
µs
12
30
µs
20
13
7
µs
µs
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.) (Continued)
DC Characteristics
Storage Time(7)
Fall Time(8)
Test Conditions
VCE = 0.4V,
RBE = 330 kΩ,
RL = 1 kΩ, VCC = 5V
VCE = 0.4V,
RBE = 330 kΩ,
RL = 1 kΩ, VCC = 5V
Symbol
IF = 10mA
IF = 5mA
ts
IF = 10mA
IF = 5mA
tf
Typ**
Max
MCT5200
Device
Min
15
18
MCT5201
10
13
MCT5200
16
30
MCT5201
16
30
Units
µs
µs
**All typicals at TA = 25°C
Notes
1. DC Current Transfer Ratio (CTRCE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x
100%, at a specified voltage between the collector and emitter (VCE).
2. The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent(ICB) divided by the
input LED current (IF) time 100%.
3. Referring to Figure 14 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to
the 1.3V point on the falling edge of the output pulse.
4. Referring to Figure 14 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the
1.3V point on the rising edge of the output pulse.
5. Delay time (td) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.
6. Rise time (tr) is measured from 90% to 10% of Vo falling edge.
7. Storage time (ts) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.
8. Fall time (tf) is measured from 10% to 90% of Vo rising edge.
9. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).
10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.
© 2003 Fairchild Semiconductor Corporation
Page 4 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
TYPICAL PERFORMANCE GRAPHS
2.0
1.2
1.8
1.0
NORMALIZED CTRCE
VF - FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1.6
1.4
TA = -55°C
1.2
TA = 25°C
1.0
0.8
0.6
0.4
Normalized to:
IF = 5mA
VCE = 5V
TA = 25°C
0.2
TA = 100°C
0.8
0.1
Fig. 2 Normalized Current Transfer Ratio vs.
Forward Current
0
0.1
100
1
10
IF - LED FORWARD CURRENT (mA)
1
10
IF - FORWARD CURRENT (mA)
Fig. 4 Normalized Collector vs.
Collector - Emitter Voltage
Fig. 3 Normalized CTR vs. Temperature
NORMALIZED CTRCE
1.2
10
Normalized to:
IF = 5mA
VCE = 5V
TA = 25°C
NORMALIZED ICE - COLLECTOR
- EMITTER CURRENT
1.6
1.4
IF = 10mA
IF = 2mA
IF = 5mA
1.0
0.8
IF = 1mA
0.6
IF = 0.5 mA
0.4
IF = 0.2 mA
0.2
0.0
-60
-40
-20
0
20
40
60
80
IF = 10 mA
1
IF = 5 mA
IF = 2 mA
0.1
IF = 1 mA
IF = 0.5 mA
0.01
IF = 0.2 mA
Normalized to:
IF = 5mA :
VCE = 5V
TA = 25°C
0.001
0.0001
0.1
100
1
Fig. 5 Normalized Collector Base Photocurrent
Ratio vs. Forward Current
Fig. 6 Normalized Collector Base Current vs. Temperature
10
10
1
0.1
Normalized to:
IF = 5mA
VCB = 4.3V
TA = 25°C
1
10
NORMALIZED - COLLECTOR
BASE CURRENT
100
NORMALIZED ICB - COLLECTOR
BASE PHOTO CURRENT
10
VCE - COLLECTOR - EMITTER VOLTAGE - V
TA - AMBIENT TEMPERATURE - °C
0.01
0.1
100
100
IF = 5 mA
1
IF = 2 mA
0.1
IF = 1 mA
IF = 0.5 mA
0.01 Normalized to:
IF = 0.2 mA
IF = 5mA
VCB = 4.3V
TA = 25°C
0.001
-60
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE - °C
IF - FORWARD CURRENT - mA
© 2003 Fairchild Semiconductor Corporation
IF = 10 mA
Page 5 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
TYPICAL PERFORMANCE GRAPHS (Continued)
Fig. 7 Collector-Emitter Dark Current vs.
Ambient Temperature
Fig. 8 Switching Time vs.
Ambient Temperature
30
IF = 0mA
VCE = 10V
SWITCHING TIME - t(µs)
ICEO - DARK CURRENT (nA)
10000
1000
100
10
1
20
tPLH
ts
15
tf
10
5
tPHL
0.1
0
10
20 30 40 50 60 70 80 90
TA - AMBIENT TEMPERATURE (°C)
0
-60
100
-40
-20
Refer to Figure 13 for switching time circuit
SWITCHING TIME - t(µs)
SWITCHING TIME - t(µs)
0
20
40
60
80
100
30
IF = 10mA
VCC = 5V
RL = 1K
RBE = 100K
tPLH
15
ts
tf
10
5
tPHL
0
-60
-40
tr
-20
td
0
20
40
60
80
25
IF = 5mA
VCC = 5V
RL = 1K
RBE = 330K
tf
15
tPLH
ts
10
5
tr
tPHL
0
-60
100
Refer to Figure 13 for switching time circuit
20
TA - AMBIENT TEMPERATURE (°C)
-40
-20
0
td
20
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
Fig. 11 Switching Time vs.
Ambient Temperature
Fig. 12 Turn-on Time vs.
Base-Emitter Resistance
100
IF = 5mA
VCC = 5V
RL = 1K
RBE = 100K
SWITCHING TIME - tPHL, tPLH (µs)
20
15
td
Fig. 10 Switching Time vs.
Ambient Temperature
25
20
tr
TA - AMBIENT TEMPERATURE (°C)
Fig. 9 Switching Time vs.
Ambient Temperature
SWITCHING TIME - t(µs)
Refer to Figure 13 for switching time circuit
IF = 10mA
VCC = 5V
RL = 1K
RBE = 330K
25
Refer to Figure 13 for switching time circuit
tPLH
tf
10
ts
5
tr
tPHL
0
-60
-40
-20
0
td
20
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
© 2003 Fairchild Semiconductor Corporation
tPLH, IF=3mA, RL=3.3K
tPLH, IF=1.6mA, RL=4.7K
tPLH, IF=1mA, RL=10K
tPHL, IF=1mA, RL=10K
10
tPHL, IF=1.6mA, RL=4.7K
tPHL, IF=3mA, RL=3.3K
VCC = 5V
VCE = 0.4V
TA = 25°C
1
10
100
1000
10000
BASE RESISTANCE - RBE (kΩ)
Page 6 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
TYPICAL ELECTRO-OPTICAL CHARACTERISTICS (TA = 25°C Unless Otherwise Specified)
VCC = 5.0 V
VCC = 5.0 V
Pulse Gen
ZO = 50Ω
f = 10KHz
10% D.F.
1K
VO
Pulse Gen
ZO = 50Ω
f = 10KHz
10% D.F.
1K
4.7K
D1
IF monitor
VO
IF monitor
330K
100 Ω
D2
D3
330K
100 Ω
D4
tr, tf, td, ts
TEST CIRCUIT
tPHL, tPLH
TEST CIRCUIT
Figure 13.
INPUT
50%
(IF)
0
td
90%
OUTPUT
(VO)
90%
tPHL
tPLH
1.3 V
10%
1.3 V
10%
0
ts
tr
tf
Figure 14. Switching Circuit Waveforms
© 2003 Fairchild Semiconductor Corporation
Page 7 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
Package Dimensions (Through Hole)
MCT5211
Package Dimensions (Surface Mount)
0.350 (8.89)
0.330 (8.38)
PIN 1
ID.
3
2
PIN 1
ID.
1
0.270 (6.86)
0.240 (6.10)
SEATING PLANE
0.270 (6.86)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
4
0.070 (1.78)
0.045 (1.14)
5
6
0.300 (7.62)
TYP
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.115 (2.92)
0.200 (5.08)
0.165 (4.18)
0.020 (0.51)
MIN
0.154 (3.90)
0.100 (2.54)
0.016 (0.41)
0.008 (0.20)
0.020 (0.51)
MIN
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
0.016 (0.40)
0.008 (0.20)
0.022 (0.56)
0.016 (0.41)
0° to 15°
0.016 (0.40) MIN
0.315 (8.00)
MIN
0.405 (10.30)
MAX
0.300 (7.62)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
0.100 (2.54)
TYP
Package Dimensions (0.4” Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
0.070 (1.78)
0.270 (6.86)
0.240 (6.10)
0.060 (1.52)
SEATING PLANE
0.350 (8.89)
0.330 (8.38)
0.415 (10.54)
0.070 (1.78)
0.045 (1.14)
0.100 (2.54)
0.295 (7.49)
0.030 (0.76)
0.200 (5.08)
0.135 (3.43)
0.154 (3.90)
0.100 (2.54)
0.004 (0.10)
MIN
0.016 (0.40)
0.008 (0.20)
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0.400 (10.16)
TYP
Note
All dimensions are in inches (millimeters)
© 2003 Fairchild Semiconductor Corporation
Page 8 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
ORDERING INFORMATION
Option
Order Entry Identifier
Description
.S
Surface Mount Lead Bend
SD
.SD
Surface Mount; Tape and Reel
W
.W
0.4" Lead Spacing
.300
VDE 0884
.300W
VDE 0884, 0.4" Lead Spacing
S
300
300W
3S
3SD
.3S
VDE 0884, Surface Mount
.3SD
VDE 0884, Surface Mount, Tape and Reel
MARKING INFORMATION
1
MCT5200
2
V XX YY K
6
3
4
5
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
Two digit year code, e.g., ‘03’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
© 2003 Fairchild Semiconductor Corporation
Page 9 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
Carrier Tape Specifications
12.0 ± 0.1
4.85 ± 0.20
4.0 ± 0.1
Ø1.55 ± 0.05
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
7.5 ± 0.1
13.2 ± 0.2
9.55 ± 0.20
Ø1.6 ± 0.1
10.30 ± 0.20
0.1 MAX
16.0 ± 0.3
User Direction of Feed
NOTE
All dimensions are in inches (millimeters)
Reflow Profile (Black Package, No Suffix)
Temperature (°C)
300
215°C, 10–30 s
250
225°C peak
200
150
Time above 183°C, 60–150 sec
100
50
Ramp up = 3°C/sec
• Peak reflow temperature: 225°C (package surface temperature)
• Time of temperature higher than 183°C for 60–150 seconds
• One time soldering reflow is recommended
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
© 2003 Fairchild Semiconductor Corporation
Page 10 of 11
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
MCT5201
MCT5210
MCT5211
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
© 2003 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Page 11 of 11
6/10/03
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