Vishay BYV27-50 Ultra fast silicon mesa rectifier Datasheet

BYV27/...
Vishay Telefunken
Ultra Fast Silicon Mesa Rectifiers
Features
D
D
D
D
D
Controlled avalanche characteristic
Low forward voltage
Ultra fast recovery time
Glass passivated junction
Hermetically sealed package
Applications
94 9539
Very fast rectifier e.g. for switch mode power supply
Absolute Maximum Ratings
Tj = 25_C
Parameter
Peak reverse voltage,
g
non repetitive
Test Conditions
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Type
BYV27/50
BYV27/100
BYV27/150
BYV27/200
BYV27/50
BYV27/100
BYV27/150
BYV27/200
tp=10ms,
half sinewave
Repetitive peak forward current
Average forward current
Pulse energy in avalanche mode, I(BR)R=0.6A, Tj=175°C
non repetitive
(inductive load switch off)
Junction and storage
temperature range
Symbol
VRSM
VRSM
VRSM
VRSM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
55
110
165
220
50
100
150
200
50
Unit
V
V
V
V
V
V
V
V
A
IFRM
IFAV
ER
15
2
20
A
A
mJ
Tj=Tstg
–65...+175
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 86042
Rev. 2, 24-Jun-98
Test Conditions
l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
45
100
Unit
K/W
K/W
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BYV27/...
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Test Conditions
IF=3A
IF=3A, Tj=175°C
VR=VRRM
VRSM
VR=VRRM, Tj=165°C
IF=0.5A, IR=1A, iR=0.25A
Reverse current
Reverse recovery time
Type
Symbol
VF
VF
IR
IR
IR
trr
Min
Typ
Max
1.07
0.88
1
100
150
25
Unit
V
V
mA
mA
mA
ns
120
l
l
I FAV– Average Forward Current ( A )
R thJA – Therm. Resist. Junction / Ambient ( K/W )
Characteristics (Tj = 25_C unless otherwise specified)
100
80
TL=constant
60
40
20
2.0
1.6
1.2
0.8
v
VR =VR RM
f 200kHz
l=20mm
0.4
0
0
0
5
10
15
20
25
30
l – Lead Length ( mm )
94 9526
0
Figure 1. Typ. Thermal Resistance vs. Lead Length
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
94 9525
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
v
1.6
I R – Reverse Current ( mA )
I FAV– Average Forward Current ( A )
1000
VR RM
f 200kHz
RthJA=100K/W
PC Board
2.0
1.2
0.8
0.4
100
0
1
VR = VR RM
0.1
0
94 9524
Scattering Limit
10
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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0
94 9527
40
80
120
160
200
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86042
Rev. 2, 24-Jun-98
BYV27/...
Vishay Telefunken
10
IF – Forward Current ( A )
Tj = 175°C
1
Tj = 25°C
0.1
0.01
0
94 9528
0.6
1.2
1.8
2.4
3.0
VF – Forward Voltage ( V )
Figure 5. Max. Forward Current vs. Forward Voltage
Dimensions in mm
∅ 3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5 g
26 min.
Document Number 86042
Rev. 2, 24-Jun-98
Cathode Identification
4.2 max.
94 9538
technical drawings
according to DIN
specifications
∅ 0.82 max.
26 min.
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BYV27/...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86042
Rev. 2, 24-Jun-98
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