ON MPSW51A One watt high current transistors pnp silicon Datasheet

ON Semiconductort
MPSW51
MPSW51A*
One Watt High Current
Transistors
PNP Silicon
w
*ON Semiconductor Preferred Device
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MPSW51
MPSW51A
VCEO
−30
−40
Vdc
MPSW51
MPSW51A
VCBO
−40
−50
Vdc
VEBO
−5.0
Vdc
Collector Current — Continuous
IC
−1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Operating and Storage Junction
Temperature Range
1
3
CASE 29−10, STYLE 1
TO−92 (TO−226AE)
COLLECTOR
3
2
BASE
THERMAL CHARACTERISTICS
Characteristic
2
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−30
−40
—
—
−40
−50
—
—
−5.0
—
—
—
−0.1
−0.1
—
−0.1
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1)
(IC = −1.0 mAdc, IB = 0)
MPSW51
MPSW51A
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
MPSW51
MPSW51A
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −40 Vdc, IE = 0)
MPSW51
MPSW51A
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
ICBO
IEBO
Vdc
Vdc
Vdc
μAdc
μAdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
MPSW51/D
MPSW51 MPSW51A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
55
60
50
—
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −1000 mAdc, VCE = −1.0 Vdc)
hFE
—
Collector −Emitter Saturation Voltage
(IC = −1000 mAdc, IB = −100 mAdc)
VCE(sat)
—
−0.7
Vdc
Base −Emitter On Voltage
(IC = −1000 mAdc, VCE = −1.0 Vdc)
VBE(on)
—
−1.2
Vdc
fT
50
—
MHz
Cobo
—
30
pF
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
−1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
100
70
VCE = −1.0 V
TJ = 25°C
50
20
−10
−20
−50
−100
−200
V, VOLTAGE (VOLTS)
IC = IC =
IC =
IC =
−100 −250 −500 mA −1000 mA
mA mA
−0.6
−0.4
−0.2
TJ = 25°C
0
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
−50 −100
Figure 2. Collector Saturation Region
VBE(SAT) @ IC/IB = 10
VBE(ON) @ VCE = −1.0 V
VCE(SAT) @ IC/IB = 10
0
−1.0 −2.0
IC =
−50 mA
Figure 1. DC Current Gain
−0.4
−0.2
IC =
−10 mA
IB, BASE CURRENT (mA)
TJ = 25°C
−0.6
−1000
−0.8
IC, COLLECTOR CURRENT (mA)
−1.0
−0.8
−500
−5.0
−10
−20
−50 −100 −200
qV B, TEMPERATURE COEFFICIENT (mV/ °C)
h FE , CURRENT GAIN
200
−500 −1000
−0.8
−1.2
−1.6
qVB for VBE
−2.0
−2.4
−2.8
−1.0 −2.0
−5.0
−10
−20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
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2
−500 −1000
300
160
TJ = 25°C
C, CAPACITANCE (pF)
200
VCE = −10 V
TJ = 25°C
f = 20 MHz
100
70
50
120
80
Cibo
40
Cobo
30
−10
−20
−50
−100
−200
−500
0
−1000
IC, COLLECTOR CURRENT (mA)
Cobo
Cibo
−5.0
−1.0
Figure 5. Current Gain — Bandwidth Product
−1.0 k
I C , COLLECTOR CURRENT (mA)
f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
MPSW51 MPSW51A
−500
Figure 6. Capacitance
1.0 ms
1.0 ms
100 ms
TA = 25°C
TC = 25°C
−200
−100
−20
−10
−15
−2.0
−3.0
−4.0
VR, REVERSE VOLTAGE (VOLTS)
DUTY CYCLE ≤ 10%
MPSW51
MPSW51A
−50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−20
−10
−1.0
−2.0
−5.0
−10
−20 −30 −40
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating
Area
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3
−25
−5.0
MPSW51 MPSW51A
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−10
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
F
SEATING
PLANE
L
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.135
−−−
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MPSW51/D
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