TI1 ISO721QDRQ1 And/or 5-v high-speed digital isolator Datasheet

ISO721-Q1, ISO722-Q1
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SLLS918C – JULY 2008 – REVISED JUNE 2013
3.3-V AND/OR 5-V HIGH-SPEED DIGITAL ISOLATORS
Check for Samples: ISO721-Q1, ISO722-Q1
FEATURES
1
•
•
•
•
Qualified for Automotive Applications
AEC-Q100 Qualified With the Following
Results:
– Device Temperature Grade 1: –40ºC to
125ºC Ambient Operating Temperature
Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C5
4000-V(peak) Isolation
– UL 1577, IEC 60747-5-2 (VDE 0884, Rev 2),
IEC 61010-1
– 50-kV/s Transient Immunity (Typ)
Signaling Rate 0 Mbps to 100 Mbps
– Low Propagation Delay
– Low Pulse Skew
(Pulse-Width Distortion)
•
•
•
•
•
Low-Power Sleep Mode
High Electromagnetic Immunity
Low Input Current Requirement
Failsafe Output
Drop-In Replacement for Most Optical and
Magnetic Isolators
DESCRIPTION
The ISO72x-Q1 is a digital isolator with a logic input and output buffer separated by a silicon oxide (SiO2)
insulation barrier. This barrier provides galvanic isolation of up to 4000 V. Used in conjunction with isolated
power supplies, this device prevents noise currents on a data bus or other circuits from entering the local ground
and interfering with or damaging sensitive circuitry.
The capacitive isolation barrier conditions, translates to a balanced signal, then differentiates a binary input
signal. Across the isolation barrier, a differential comparator receives the logic-transition information, then sets or
resets a flip-flop and the output circuit accordingly. A periodic update pulse sent across the barrier ensures the
proper dc level of the output. On failure to receive this dc refresh pulse for more than 4 μs, the response of the
device is as if the input is or not actively driven, and the failsafe circuit drives the output to a logic-high state.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008–2013, Texas Instruments Incorporated
ISO721-Q1, ISO722-Q1
SLLS918C – JULY 2008 – REVISED JUNE 2013
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FUNCTION DIAGRAM
DC Channel
Isolation Barrier
+
_
OSC
+
PWM
Vref
Filter
Pulse Width
Demodulation
_
+
POR
IN
Input
+
Filter
Carrier Detect
BIAS
POR
+
_
Vref
Data MUX
AC Detect
3-State
Output Buffer
_
OUT
+
AC Channel
2
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DESCRIPTION (CONTINUED)
The symmetry of the dielectric and capacitor within the integrated circuitry provides for close capacitive matching
and allows fast transient voltage changes between the input and output grounds without corrupting the output.
The small capacitance and resulting time constant provide for fast operation with signaling rates(1) from 0 Mbps
(dc) to 100 Mbps.
The device requires two supply voltages of 3.3 V, 5 V, or any combination. All inputs are 5-V tolerant when
supplied from a 3.3-V supply, and all outputs are 4-mA CMOS. The device has a TTL input threshold and a noise
filter at the input that prevents transient pulses of up to 2 ns in duration from being passed to the output of the
device.
The ISO722-Q1 device includes an active-low output enable that, when driven to a high logic level, places the
output in a high-impedance state and turns off internal bias circuitry to conserve power.
The ISO72x-Q1 is characterized for operation over the ambient temperature range of –40°C to 125°C.
(1) The signaling rate of a line is the number of voltage transitions that occur per second, expressed in the
units bps (bits per second).
VCC1
1
IN
2
VCC1
3
GND1
4
Isolation
ISO721-Q1
D PACKAGE
(TOP VIEW)
8
VCC2
7
GND2
6
OUT
5
GND2
VCC1
1
IN
2
VCC1
3
GND1
4
Isolation
ISO722-Q1
D PACKAGE
(TOP VIEW)
8
VCC2
7
EN
6
OUT
5
GND2
ORDERING AND PACKAGING INFORMATION
For the most-current package and ordering information, see the Package Option Addendum at the end of this
document, or see the TI Web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
Table 1. REGULATORY INFORMATION
VDE
CSA
UL
Certified according to IEC 60747-5-2
Approved under CSA Component
Acceptance Notice: CA-5A
Recognized under 1577
Component Recognition Program (1)
File Number: 40016131
File Number: 1698195
File Number: E181974
(1)
Production tested ≥ 3000 VRMS for 1 second in accordance with UL 1577.
Copyright © 2008–2013, Texas Instruments Incorporated
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ABSOLUTE MAXIMUM RATINGS (1)
VCC
Supply voltage (2), VCC1, VCC2
–0.5 V to 6 V
VI
Voltage at IN or OUT terminal
–0.5 V to 6 V
IO
Output current
TJ
Maximum virtual-junction temperature
ESD
(1)
(2)
(3)
(4)
±15 mA
170°C
Human-Body Model
Electrostatic discharge rating
(3)
±2 kV
Charged-Device Model (4)
±1 kV
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values. Vrms
values are not listed in this publication.
JEDEC Standard 22, Test Method A114-C.01
JEDEC Standard 22, Test Method C101
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
3
5.5
VCC
Supply voltage (1), VCC1, VCC2
IOH
High-level output current
IOL
Low-level output current
–4
tui
Input pulse duration
10
VIH
High-level input voltage (IN)
VIL
Low-level input voltage (IN)
TA
Operating free-air temperature
TJ
Operating virtual-junction temperature
H
External magnetic field intensity per IEC 61000-4-8 and IEC 61000-4-9 certification
(1)
4
UNIT
V
mA
mA
ns
2
VCC
V
0
0.8
V
–40
125
°C
See the Thermal Characteristics table
150
°C
1000
A/m
For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V.
IEC 60747-5-2 INSULATION CHARACTERISTICS (1)
over recommended operating conditions (unless otherwise noted)
PARAMETER
VIORM
VPR
RS
Maximum working insulation voltage
Input-to-output test voltage
VIOTM
TEST CONDITIONS
Transient overvoltage
Insulation resistance
4
UNIT
560
V
After Input/Output Safety Test Subgroup 2/3
VPR = VIORM × 1.2, t = 10 s,
Partial discharge < 5 pC
672
V
Method a, VPR = VIORM × 1.6,
Type and sample test with t = 10 s,
Partial discharge < 5 pC
896
V
Method b1, VPR = VIORM × 1.875,
100 % Production test with t = 1 s,
Partial discharge < 5 pC
1050
V
t = 60 s
4000
V
9
Ω
VIO = 500 V at TS
>10
Pollution degree
(1)
SPECIFICATIONS
2
Climatic Classification 40/125/21
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ELECTRICAL CHARACTERISTICS: VCC1 and VCC2 5-V (1) OPERATION
over recommended operating conditions (unless otherwise noted)
PARAMETER
ICC1
VCC1 supply current
TEST CONDITIONS
Quiescent
VI = VCC or 0 V, No load
25 Mbps
ISO722-Q1 Sleep
Mode
ICC2
VCC2 supply current
0.5
1
2
4
VI = VCC or 0 V, No load
8
12
10
14
IOH = -4 mA, See Figure 1
VCC –
0.8
4.6
IOH = –20 μA, See Figure 1
VCC –
0.1
5
High-level output voltage
0.2
0.4
IOL = 20 μA, See Figure 1
0
0.1
VI(HYS)
Input voltage hysteresis
IIH
High-level input current
IN at 2 V
IIL
Low-level input current
IN at 0.8 V
IOZ
High-impedance
output current
CI
Input capacitance to ground
IN at VCC, VI = 0.4 sin (4E6πt)
CMTI
Common-mode transient immunity
VI = VCC or 0 V, See Figure 5
mA
μA
mA
V
IOL = 4 mA, See Figure 1
Low-level output voltage
UNIT
200
EN at 0 V or
ISO721-Q1
VOL
(1)
TYP MAX
EN at VCC
VI = VCC or 0 V, No load
Quiescent
25 Mbps
VOH
MIN
V
150
ISO722-Q1
mV
10
μA
–10
EN, IN at VCC
μA
1
15
1
pF
50
kV/μs
For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V.
SWITCHING CHARACTERISTICS: VCC1 and VCC2 5-V OPERATION
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
tPLH
Propagation delay, low-to-high-level output
See Figure 1
17
24
ns
tPHL
Propagation delay , high-to-low-level output
See Figure 1
17
24
ns
tsk(p)
Pulse skew |tPHL – tPLH|
See Figure 1
0.5
2
ns
tsk(pp)
(1)
Part-to-part skew
0
3
ns
tr
Output-signal rise time
See Figure 1
1
ns
tf
Output-signal fall time
See Figure 1
1
ns
tpHZ
Sleep-mode propagation delay,
high-level-to-high-impedance output
Sleep-mode propagation delay,
high-impedance-to-high-level output
tpZH
Sleep-mode propagation delay,
high-impedance-to-low-level output
tfs
Failsafe output delay time from input power loss
(1)
15
ns
3.5
4
8
μs
5.5
8
15
ns
4
5
8
μs
See Figure 3
tpZL
tjit(PP)
8
ISO722-Q1
Sleep-mode propagation delay,
low-level-to-high-impedance output
tpLZ
6
See Figure 2
Peak-to-peak eye-pattern jitter
See Figure 4
3
100-Mbps NRZ data input,
See Figure 6
2
100-Mbps unrestricted bit run
length data input, See Figure 6
3
μs
ns
tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices
operate with the same supply voltages, at the same temperature, and have identical packages and test circuits.
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ELECTRICAL CHARACTERISTICS: VCC1 at 5-V, VCC2 at 3.3-V (1) OPERATION
over recommended operating conditions (unless otherwise noted)
PARAMETER
ICC1
VCC1 supply current
ICC2
VCC2 supply current
TEST CONDITIONS
Quiescent
TYP MAX
VI = VCC or 0 V, No load
25 Mbps
ISO722-Q1
0.5
1
2
4
EN at VCC
Quiescent
VI = VCC or 0 V, No load
4
6.5
5
7.5
IOH = –4 mA, See Figure 1
VCC – 0.4
3
IOH = –20 μA, See Figure 1
VCC – 0.1
3.3
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input voltage hysteresis
IIH
High-level input current
IN at 2 V
IIL
Low-level input current
IN at 0.8 V
IOZ
High-impedance output
current
CI
Input capacitance to ground
IN at VCC, VI = 0.4 sin (4E6πt)
CMTI
Common-mode transient immunity
VI = VCC or 0 V, See Figure 5
UNIT
mA
μA
150
EN at 0 V or
ISO721-Q1
25 Mbps
(1)
MIN
mA
V
IOL = 4 mA, See Figure 1
0.2
0.4
IOL = 20 μA, See Figure 1
0
0.1
V
150
ISO722-Q1
mV
μA
10
μA
–10
EN, IN at VCC
μA
1
15
1
pF
40
kV/μs
For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V.
SWITCHING CHARACTERISTICS: VCC1 at 5-V, VCC2 at 3.3-V OPERATION
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
tPLH
Propagation delay, low-to-high-level output
See Figure 1
19
30
ns
tPHL
Propagation delay , high-to-low-level output
See Figure 1
19
30
ns
tsk(p)
Pulse skew |tPHL – tPLH|
See Figure 1
0.5
3
ns
tsk(pp)
(1)
Part-to-part skew
0
5
ns
tr
Output signal rise time
See Figure 1
2
ns
tf
Output signal fall time
See Figure 1
2
ns
tpHZ
Sleep-mode propagation delay,
high-level-to-high-impedance output
Sleep-mode propagation delay,
high-impedance-to-high-level output
tpZH
Sleep-mode propagation delay,
low-level-to-high-impedance output
tpLZ
tfs
Failsafe output delay time from input power loss
(1)
6
25
ns
5
6
8
μs
7
13
25
ns
5
6
8
μs
See Figure 3
Sleep-mode propagation delay,
high-impedance-to-low-level output
Peak-to-peak eye-pattern jitter
13
ISO722-Q1
tpZL
tjit(PP)
7
See Figure 2
See Figure 4
3
100-Mbps NRZ data input,
See Figure 6
2
100-Mbps unrestricted bit run length
data input, See Figure 6
3
μs
ns
tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices
operate with the same supply voltages, at the same temperature, and have identical packages and test circuits.
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ELECTRICAL CHARACTERISTICS: VCC1 at 3.3-V, VCC2 at 5-V (1) OPERATION
over recommended operating conditions (unless otherwise noted)
PARAMETER
ICC1
TEST CONDITIONS
Quiescent
VCC1 supply current
VI = VCC or 0 V, No load
25 Mbps
ISO722-Q1
Sleep Mode
ICC2
VCC2 supply current
TYP
MAX
0.3
0.5
1
2
EN at VCC
VI = VCC or 0 V, No load
Quiescent
25 Mbps
200
EN at 0 V or ISO721Q1
VI = VCC or 0 V, No load
8
12
10
14
IOH = –4 mA, See Figure 1
VCC – 0.8
4.6
IOH = –20 μA, See Figure 1
VCC – 0.1
5
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input voltage hysteresis
IIH
High-level input current
IN at 2 V
IIL
Low-level input current
IN at 0.8 V
IOZ
High-impedance output
current
CI
Input capacitance to ground
IN at VCC, VI = 0.4 sin (4E6πt)
CMTI
Common-mode transient immunity
VI = VCC or 0 V, See Figure 5
(1)
MIN
IOL = 4 mA, See Figure 1
0.2
0.4
IOL = 20 μA, See Figure 1
0
0.1
μA
mA
V
mV
10
μA
μA
–10
EN, IN at VCC
1
15
mA
V
150
ISO722-Q1
UNIT
μA
1
pF
40
kV/μs
For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V.
SWITCHING CHARACTERISTICS: VCC1 at 3.3-V, VCC2 at 5-V OPERATION
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
tPLH
Propagation delay, low-to-high-level output
See Figure 1
17
30
ns
tPHL
Propagation delay , high-to-low-level output
See Figure 1
17
30
ns
tsk(p)
Pulse skew |tPHL – tPLH|
See Figure 1
0.5
3
ns
tsk(pp)
(1)
Part-to-part skew
0
5
ns
tr
Output signal rise time
See Figure 1
2
ns
tf
Output signal fall time
See Figure 1
2
ns
tpHZ
Sleep-mode propagation delay,
high-level-to-high-impedance output
Sleep-mode propagation delay,
high-impedance-to-high-level output
tpZH
Sleep-mode propagation delay,
high-impedance-to-low-level output
tfs
Failsafe output delay time from input power loss
(1)
15
ns
4.5
5
8
μs
7
9
15
ns
4.5
5
8
μs
See Figure 3
tpZL
tjit(PP)
9
ISO722-Q1
Sleep-mode propagation delay,
low-level-to-high-impedance output
tpLZ
7
See Figure 2
Peak-to-peak eye-pattern jitter
See Figure 4
3
100-Mbps NRZ data input,
See Figure 6
2
100-Mbps unrestricted bit
run length data input, See
Figure 6
3
μs
ns
tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices
operate with the same supply voltages, at the same temperature, and have identical packages and test circuits.
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ELECTRICAL CHARACTERISTICS: VCC1 and VCC2 at 3.3-V (1) OPERATION
over recommended operating conditions (unless otherwise noted)
PARAMETER
ICC1
TEST CONDITIONS
Quiescent
VCC1 supply current
VI = VCC or 0 V, No load
25 Mbps
ISO722-Q1
Sleep Mode
ICC2
VCC2 supply current
TYP
MAX
0.3
0.5
1
2
EN at VCC
VI = VCC or 0 V, No load
Quiescent
25 Mbps
150
EN at 0 V or ISO721Q1
VI = VCC or 0 V, No load
4
6.5
5
7.5
IOH = –4 mA, See Figure 1
VCC – 0.4
3
IOH = –20 μA, See Figure 1
VCC – 0.1
3.3
VOH
High-level output voltage
VOL
Low-level output voltage
VI(HYS)
Input voltage hysteresis
IIH
High-level input current
IN at 2 V
IIL
Low-level input current
IN at 0.8 V
IOZ
High-impedance output
current
CI
Input capacitance to ground
IN at VCC, VI = 0.4 sin (4E6πt)
CMTI
Common-mode transient immunity
VI = VCC or 0 V, See Figure 5
(1)
MIN
IOL = 4 mA, See Figure 1
0.2
0.4
IOL = 20 μA, See Figure 1
0
0.1
μA
mA
V
mV
10
μA
μA
–10
EN, IN at VCC
1
15
mA
V
150
ISO722-Q1
UNIT
μA
1
pF
40
kV/μs
For 5-V operation, VCC1 or VCC2 specification is from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 or VCC2 specification is from 3 V to 3.6 V.
SWITCHING CHARACTERISTICS: VCC1 and VCC2 at 3.3-V OPERATION
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
tPLH
Propagation delay, low-to-high-level output
See Figure 1
20
34
ns
tPHL
Propagation delay , high-to-low-level output
See Figure 1
20
34
ns
tsk(p)
Pulse skew |tPHL – tPLH|
See Figure 1
0.5
3
ns
tsk(pp)
(1)
Part-to-part skew
0
5
ns
tr
Output signal rise time
See Figure 1
2
ns
tf
Output signal fall time
See Figure 1
2
ns
tpHZ
Sleep-mode propagation delay,
high-level-to-high-impedance output
Sleep-mode propagation delay,
high-impedance-to-high-level output
tpZH
Sleep-mode propagation delay,
low-level-to-high-impedance output
tpLZ
tfs
Failsafe output delay time from input power loss
(1)
8
25
ns
5
6
8
μs
7
13
25
ns
5
6
8
μs
See Figure 3
Sleep-mode propagation delay,
high-impedance-to-low-level output
Peak-to-peak eye-pattern jitter
13
ISO722-Q1
tpZL
tjit(PP)
7
See Figure 2
See Figure 4
3
100-Mbps NRZ data input,
See Figure 6
2
100-Mbps unrestricted bit run
length data input, See
Figure 6
3
μs
ns
tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices
operate with the same supply voltages, at the same temperature, and have identical packages and test circuits.
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ISOLATION BARRIER
PARAMETER MEASUREMENT INFORMATION
IN
Input
Generator
(see Note A)
VI
50 W
VCC1
VI
IO
OUT
VCC1/2
VCC1/2
0V
tPHL
VOH
tPLH
VO
CL
V
(see Note B) O
90%
50%
50%
10%
A.
A generator having the following characteristics supplies the input pulse:
PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω.
B.
CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
VOL
tf
tr
3V
ISOLATION BARRIER
Figure 1. Switching Characteristic Test Circuit and Voltage Waveforms
IN
Input
Generator
NOTE A
VO
OUT
VCC2
VI
VCC2/2
0V
EN
RL = 1 kW ±1 %
CL
NOTE B
+
tPZH
VOH
50%
VO
VI
VCC2/2
50 W
0.5 V
0V
tPHZ
-
Figure 2. ISO722-Q1 Sleep-Mode High-Level Output Test Circuit and Voltage Waveforms
0V
ISOLATION BARRIER
VCC2
IN
Input
Generator
NOTE A
RL = 1 kW ±1%
OUT
EN
CL
NOTE B
+
VI
VCC2
VI
VO
VCC2/2
0V
tPZL
VO
VCC2/2
tPLZ
VCC2
0.5 V
50%
VOL
50 W
-
Figure 3. ISO722-Q1 Sleep-Mode Low-Level Output Test Circuit and Voltage Waveforms
NOTE
A: A generator having the following characteristics Supplies the input pulse:
PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω.
B: CL = 15 pF ± 20% and includes instrumentation and fixture capacitance.
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PARAMETER MEASUREMENT INFORMATION (continued)
VCC1
0V
IN
ISOLATION BARRIER
VI
VCC1
VI
OUT
2.7 V
VO
0V
tfs
VO
CL
15 pF
±20%
VOH
50%
VOL
NOTE: VI transition time is 100 ns.
VCC1
IN
VCC
or
0V
CI = 0.1 mF,
GND1
ISOLATION BARRIER
Figure 4. Failsafe Delay-Time Test Circuit and Voltage Waveforms
±1%
VCC2
OUT
GND2
CL
15 pF
±20%
VO
VCM
NOTE: Pass or fail criterion is no change in VO.
Figure 5. Common-Mode Transient Immunity Test Circuit and Voltage Waveform
10
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PARAMETER MEASUREMENT INFORMATION (continued)
Tektronix
HFS9009
Tektronix
784D
PATTERN
GENERATOR
VCC1
In p u t
0V
O u tp u t
VCC2/2
J itte r
NOTE: Bit pattern run length is 216 – 1. Transition time is 800 ps. NRZ data input has no more than five consecutive
1s or 0s.
Figure 6. Peak-to-Peak Eye-Pattern Jitter Test Circuit and Voltage Waveform
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DEVICE INFORMATION
PACKAGE CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(1)
MIN
TYP
MAX
UNIT
L(101)
Minimum air gap (clearance)
Shortest terminal-to-terminal distance through air
4.8
mm
L(102)
Shortest terminal-to-terminal distance across the
Minimum external tracking (creepage)
package surface
4.3
mm
CTI
Tracking resistance (comparative
tracking index)
DIN IEC 60112/VDE 0303 Part 1
≥ 175
V
Minimum internal gap
(internal clearance)
Distance through insulation
0.008
mm
RIO
Isolation resistance
Input to output, VIO = 500 V, all pins on each side of
the barrier tied together creating a two-terminal
device, TA < 100°C
>1012
Ω
Input-to-output, VIO = 500 V,
100°C ≤ TA< TA max.
>1011
Ω
CIO
Barrier capacitance, input to output
VI = 0.4 sin (4E6πt)
1
pF
CI
Input capacitance to ground
VI = 0.4 sin (4E6πt)
1
pF
(1)
Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Take care to
maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed circuit
board do not reduce this distance.
Creepage and clearance on a printed circuit board become equal according to the measurement techniques shown in the Isolation
Glossary. Use techniques such as inserting grooves and/or ribs on a printed circuit board to help increase these specifications.
IEC 60664-1 RATINGS TABLE
PARAMETER
TEST CONDITIONS
Basic isolation group
Installation classification
SPECIFICATION
Material group
IIIa
Rated mains voltage ≤150 VRMS
I-IV
Rated mains voltage ≤300 VRMS
I-III
DEVICE I/O SCHEMATIC
Figure 7. Equivalent Input and Output Schematic Diagrams
Output
Input
VCC2
VCC1
VCC1
VCC1
8W
1 MW
OUT
500 W
IN
13 W
12
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IEC SAFETY LIMITING VALUES
Safety limiting is designed to prevent potential damage to the isolation barrier on failure of input or output
circuitry. A failure of the IO can allow low resistance to ground or the supply, and without current limiting,
dissipate sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary
system failures.
PARAMETER
TEST CONDITIONS
IS
Safety input, output, or supply current
TS
Maximum case temperature
MIN
MAX
θJA = 263°C/W, VI = 5.5 V, TJ = 170°C, TA = 25°C
100
θJA = 263°C/W, VI = 3.6 V, TJ = 170°C, TA = 25°C
153
150
UNIT
mA
°C
The safety-limiting constraint is the absolute maximum junction temperature specified in the absolute maximum
ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the
application hardware determines the junction temperature. The junction-to-air thermal resistance in the Thermal
Characteristics table is that of a device installed in the JESD51-3, Low Effective Thermal Conductivity Test Board
for Leaded Surface Mount Packages and is conservative. The power is the recommended maximum input
voltage times the current. The junction temperature is then the ambient temperature plus the power times the
junction-to-air thermal resistance.
Table 2. THERMAL CHARACTERISTICS
(over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
Junction-to-air thermal resistance
θJB
Junction-to-board thermal resistance
θJC
Junction-to-case thermal resistance
PD
(1)
263
125
VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF,
Input a 100-Mbps 50% duty cycle square wave
Device power dissipation
TYP
High-K (1)
Low-K
θJA
MIN
(1)
MAX
UNIT
°C/W
44
°C/W
75
°C/W
159
mW
Tested in accordance with the low-K or high-K thermal metric definition of EIA/JESD51-3 for leaded surface-mount packages.
200
Safety Limiting Current − mA
175
VCC1, VCC2 = 3.6 V
150
125
100
75
VCC1, VCC2 = 5.5 V
50
25
0
0
50
100
150
200
o
Case Temperature − C
Figure 8. θJC Thermal Derating Curve Per IEC 60747-5-2
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Table 3. FUNCTION TABLE (1)
VCC1
PU
PD
(1)
14
VCC2
PU
PU
INPUT
(IN)
OUTPUT
(OUT)
H
H
L
L
Open
H
X
H
PU = powered up (VCC ≥ 3 V), PD = powered down (VCC ≤ 2.5 V), X = irrelevant, H = high level,
L = low level
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TYPICAL CHARACTERISTICS
RMS SUPPLY CURRENT versus
SIGNALING RATE
RMS SUPPLY CURRENT versus
SIGNALING RATE
15
10
VCC1 = 3.3 V,
VCC2 = 3.3 V,
o
TA = 25 C,
CL = 15 pF
8
VCC1 = 5 V,
VCC2 = 5 V,
o
TA = 25 C,
CL = 15 pF
14
13
ICC − Supply Current − (mARMS)
ICC − Supply Current − (mARMS)
9
7
6
ICC2
5
4
3
ICC1
2
12
11
10
ICC2
9
8
7
ICC1
6
5
4
3
2
1
1
0
0
0
25
50
75
0
100
25
50
75
100
Signaling Rate (Mbps)
Signaling Rate (Mbps)
Figure 9.
Figure 10.
PROPAGATION DELAY versus
FREE-AIR TEMPERATURE
PROPAGATION DELAY versus
FREE-AIR TEMPERATURE
30
20
tPLH
18
tPLH
25
tPHL
16
20
15
10
VCC1 = 3.3 V,
VCC2 = 3.3 V,
CL = 15 pF,
Air Flow at 7 cf/m
5
0
-40
-25
-10
5
20
35
50
80
65
95
Propagation Delay − ns
Propagation Delay − ns
tPHL
14
12
10
8
6
VCC1 = 5 V,
VCC2 = 5 V,
CL = 15 pF,
Air Flow at 7 cf/m
4
2
0
-40
110 125
-25
-10
o
5
20
35
50
80
65
95
110 125
o
TA − Free-Air Temperature − C
TA − Free-Air Temperature − C
Figure 11.
Figure 12.
INPUT THRESHOLD VOLTAGE versus
FREE-AIR TEMPERATURE
VCC1 FAILSAFE THRESHOLD VOLTAGE versus
FREE-AIR TEMPERATURE
2.92
1.4
5-V (VIT+)
2.9
1.3
3.3-V (VIT+)
1.25
1.2
Air Flow at 7 cf/m
1.15
5-V (VIT- )
1.1
VCC1 Failsafe Voltage − V
VIT − Input Voltage Threshold − V
1.35
Vfs+
2.88
VCC = 5 V or 3.3 V,
CL = 15 pF,
Air Flow at 7 cf/m
2.86
2.84
2.82
Vfs-
2.8
1.05
3.3-V (VIT- )
1
-40
-25
-10
5
20
35
50
80
65
95
110 125
2.78
-40
-25
-10
o
TA − Free-Air Temperature − C
Figure 13.
5
20
35
50
80
65
95
110 125
o
TA − Free-Air Temperature − C
Figure 14.
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TYPICAL CHARACTERISTICS (continued)
LOW-LEVEL OUTPUT CURRENT versus
LOW-LEVEL OUTPUT VOLTAGE
HIGH-LEVEL OUTPUT CURRENT versus
HIGH-LEVEL OUTPUT VOLTAGE
70
-80
IOL − Low-Level Output Current − mA
IOH − High-Level Output Current − mA
o
TA = 25 C
o
TA = 25 C
-70
VCC = 5 V
-60
-50
-40
VCC = 3.3 V
-30
-20
-10
0
60
VCC = 5 V
50
40
30
VCC = 3.3 V
20
10
0
0
1
2
3
5
4
6
0
1
VOH − High-Level Output Voltage − V
Figure 15.
16
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2
3
4
5
VOL − Low-Level Output Voltage − V
Figure 16.
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www.ti.com
SLLS918C – JULY 2008 – REVISED JUNE 2013
APPLICATION INFORMATION
MANUFACTURER CROSS-REFERENCE DATA
The ISO72x-Q1 isolator has the same functional pinout as most other vendors, and it is often a pin-for-pin dropin replacement. The notable differences in the product are propagation delay, signaling rate, power consumption,
and transient protection rating. Use (1) as a guide for replacing other isolators with the ISO72x-Q1 single-channel
isolators.
6 OUT
GND1 4
5 GND2
GND1 4
8 VCC2
VI 2
7 GND2
6 OUT
5 GND2
VDD1 3
GND1 4
8 VDD2
7 GND2
6 VO
5 GND2
VDD1 1
VI 2
*
3
IL710
VDD1
8 VDD2
VI
7 NC
6 VO
NC
5 GND2 GND1
GND1 4
1
2
3
8 VDD2
7 VOE
Isolation
IN 2
VCC1 3
Isolation
VCC1 1
8 VCC2
7 GND2
Isolation
IN 2
VCC1 3
Isolation
VCC1 1
HCPL-xxxx
ADuM1100
VDD1 1
Isolation
ISO721
ISO722
6 VO
5 GND2
4
Figure 17. Pinout Cross-Reference
Table 4. Competitive Cross-Reference
PIN 1
PIN 2
PIN 3
PIN 4
PIN 5
PIN 6
ISO721 (1)
(2)
VCC1
IN
VCC1
GND1
GND2
OUT
(1) (2)
VDD1
VI
VDD1
GND1
GND2
VO
GND2
VDD2
GND1
GND2
VO
NC (4)
VDD2
GND1
GND2
VO
V OE
VDD2
ADuM1100
(1)
(1)
(2)
(3)
(4)
(5)
PIN 7
ISOLATOR
HCPL-xxxx
VDD1
VI
Leave
open (3)
IL710
VDD1
VI
NC (5)
ISO721
ISO722
GND2
EN
PIN 8
VCC2
An HCPL device pin 7 must be floating (open) or grounded to use an ISO722 device as a drop-in replacement. Placing pin 7 of the
ISO722 device in a high logic state disables the output of the device.
The ISO721 pin 1 and pin 3 connect together internally. One may use either or both as VCC1.
The ISO721 pin 5 and pin 7 connect together internally. One may use either or both as GND2.
Pin 3 of the HCPL devices must be open. This is not a problem when substituting an ISO721, because the extra VCC1 on pin 3 may be
open-circuit as well.
An HCPL device pin 7 must be floating (open) or grounded to use an ISO722 device as a drop-in replacement. Placing pin 7 of the
ISO722 device in a high logic state disables the output of the device.
Pin 3 of the IL710 must not tie to ground on the circuit board, because this shorts the ISO721 VCC1 to ground. The IL710 pin 3 may only
tie to VCC or be open to drop in an ISO721.
20 mm (max)
from VCC1
20 mm (max)
from VCC2
VCC1
VCC2
0.1 µF
0.1 µF
ISO721
8
1
2
Input
3
4
GND1
7
IN
OUT
6
5
Output
GND2
Figure 18. Basic Application Circuit
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ISOLATION GLOSSARY
Creepage Distance—The shortest path between two conductive input to output leads measured along the
surface of the insulation. The shortest-distance path is around the end of the package body.
Clearance—The shortest distance between two conductive input to output leads measured through air (line of
sight)
Input-to-Output Barrier Capacitance—The total capacitance between all input terminals connected together,
and all output terminals connected together
Input-to-Output Barrier Resistance—The total resistance between all input terminals connected together, and
all output terminals connected together
Primary Circuit—An internal circuit directly connected to an external supply main or other equivalent source
which supplies the primary-circuit electric power
Secondary Circuit—A circuit with no direct connection to primary power, and deriving its power from a separate
isolated source
Comparative Tracking Index (CTI)—CTI is an index used for electrical insulating materials and defined as the
numerical value of the voltage that causes failure by tracking during standard testing. Tracking is the process that
produces a partially conducting path of localized deterioration on or through the surface of an insulating material
as a result of the action of electric discharges on or close to an insulation surface -- the higher CTI value of the
insulating material, the smaller the minimum creepage distance.
Generally, insulation breakdown occurs either through the material, over its surface, or both. Surface failure may
arise from flashover or from the progressive degradation of the insulation surface by small localized sparks. Such
sparks are the result of the breaking of a surface film of conducting contaminant on the insulation. The resulting
break in the leakage current produces an overvoltage at the site of the discontinuity, generating an electric spark.
These sparks often cause carbonization on insulation material and lead to a carbon track between points of
different potential. The name of this process is tracking.
18
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Insulation
Operational insulation—Insulation needed for the correct operation of the equipment
Basic insulation—Insulation to provide basic protection against electric shock
Supplementary insulation-—Independent insulation applied in addition to basic insulation in order to ensure
protection against electric shock in the event of a failure of the basic insulation
Double insulation—Insulation comprising both basic and supplementary insulation
Reinforced insulation—A single insulation system that provides a degree of protection against electric shock
equivalent to double insulation
Pollution Degree
Pollution Degree 1—No pollution, or only dry, nonconductive pollution occurs. The pollution has no influence.
Pollution Degree 2—Normally, only nonconductive pollution occurs. However, a temporary conductivity caused
by condensation must be expected.
Pollution Degree 3—Conductive pollution occurs or dry nonconductive pollution occurs that becomes conductive
due to condensation, which is to be expected.
Pollution Degree 4–Continuous conductivity occurs due to conductive dust, rain, or other wet conditions.
Installation Category
Overvoltage Category—This section addresses insulation coordination by identifying the transient overvoltages
that may occur and by assigning four different levels as indicated in IEC 60664.
I: Signal Level-—Special equipment or parts of equipment
II: Local Level—Portable equipment, etc.
III: Distribution Level-—Fixed installation
IV: Primary Supply Level-—Overhead lines, cable systems
Each successive category should be subject to smaller transients than any higher-numbered category following
it.
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REVISION HISTORY
Changes from Revision B (June 2013) to Revision C
•
Page
Changed temperature grade from 3 to 1 .............................................................................................................................. 1
Changes from Revision A (September 2011) to Revision B
Page
•
Added AEC-Q100 qualifications ........................................................................................................................................... 1
•
Changed signaling-rate limit to 100 Mbps ............................................................................................................................ 1
•
Deleted Ordering Information table ....................................................................................................................................... 3
•
Changed last sentence in the Installation Category section ............................................................................................... 19
20
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PACKAGE OPTION ADDENDUM
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25-Jun-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
ISO721QDRQ1
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 125
IS721Q
ISO722QDRQ1
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 125
IS722Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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25-Jun-2013
OTHER QUALIFIED VERSIONS OF ISO721-Q1, ISO722-Q1 :
• Catalog: ISO721, ISO722
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
13-Feb-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
ISO721QDRQ1
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
ISO722QDRQ1
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
13-Feb-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
ISO721QDRQ1
SOIC
D
8
2500
367.0
367.0
38.0
ISO722QDRQ1
SOIC
D
8
2500
367.0
367.0
38.0
Pack Materials-Page 2
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www.ti.com/audio
Automotive and Transportation
www.ti.com/automotive
Amplifiers
amplifier.ti.com
Communications and Telecom
www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Applications Processors
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
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