PHILIPS BF1207 Dual n-channel dual gate mosfet Datasheet

BF1207
Dual N-channel dual gate MOSFET
Rev. 01 — 28 July 2005
Product data sheet
1. Product profile
1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
■ Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
■ Internal switch to save external components
■ Superior cross-modulation performance during AGC
■ High forward transfer admittance
■ High forward transfer admittance to input capacitance ratio
1.3 Applications
■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1:
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
-
-
6
VDS
drain-source voltage
DC
ID
drain current
DC
Ptot
total power dissipation
Tsp ≤ 107 °C
yfs
forward transfer admittance
f = 1 MHz
Ciss(G1)
input capacitance at gate1
V
-
-
30
mA
-
-
180
mW
amplifier A; ID = 18 mA
25
30
40
mS
amplifier B; ID = 14 mA
26
31
41
mS
amplifier A
-
2.2
2.7
pF
amplifier B
-
1.9
2.4
pF
[1]
f = 100 MHz
Crss
reverse transfer capacitance f = 100 MHz
-
20
-
fF
NF
noise figure
amplifier A; f = 400 MHz
-
1.3
-
dB
amplifier B; f = 800 MHz
-
1.4
-
dB
amplifier A
100
105
-
dBµV
amplifier B
100
103
-
dBµV
-
-
150
°C
Xmod
input level for k = 1 % at
40 dB AGC
junction temperature
Tj
[1]
cross-modulation
Tsp is the temperature at the soldering point of the source lead.
2. Pinning information
Table 2:
Discrete pinning
Pin
Description
1
drain (AMP A)
2
source
3
drain (AMP B)
4
gate1 (AMP B)
5
gate2
6
gate1 (AMP A)
Simplified outline
6
5
Symbol
AMP B
4
G1B
1
2
3
DB
G2
S
DA
G1A
AMP A
sym108
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Rev. 01 — 28 July 2005
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BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
3. Ordering information
Table 3:
Ordering information
Type number
BF1207
Package
Name
Description
Version
-
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 4:
Marking
Type number
Marking code [1]
BF1207
M2*
[1]
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per MOSFET
VDS
drain-source voltage
DC
-
6
V
ID
drain current
DC
-
30
mA
IG1
gate1 current
-
±10
mA
IG2
gate2 current
-
±10
mA
-
180
mW
Tsp ≤ 107 °C
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
[1]
Tsp is the temperature at the soldering point of the source lead.
9397 750 14955
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
3 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac741
250
Ptot
(mW)
200
150
100
50
0
0
50
100
150
200
Tsp (°C)
Fig 1. Power derating curve
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-sp)
thermal resistance from junction
to soldering point
Typ
Unit
240
K/W
7. Static characteristics
Table 7:
Static characteristics
Tj = 25 °C.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
amplifier A
6
-
-
V
amplifier B
6
-
-
V
Per MOSFET; unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S = VG2-S = 0 V; ID = 10 µA
V(BR)G1-SS
gate1-source breakdown voltage
VGS = VDS = 0 V; IG1-S = 10 mA
6
-
10
V
V(BR)G2-SS
gate2-source breakdown voltage
VGS = VDS = 0 V; IG2-S = 10 mA
6
-
10
V
VF(S-G1)
forward source-gate1 voltage
VG2-S = VDS = 0 V; IS-G1 = 10 mA
0.5
-
1.5
V
VF(S-G2)
forward source-gate2 voltage
VG1-S = VDS = 0 V; IS-G2 = 10 mA
0.5
-
1.5
V
VG1-S(th)
gate1-source threshold voltage
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
0.3
-
1.0
V
VG2-S(th)
gate2-source threshold voltage
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
0.4
-
1.0
V
IDSX
drain-source current
VG2-S = 4 V; VDS = 5 V; RG1 = 68 kΩ
amplifier A
[1]
13
-
23
mA
amplifier B
[2]
9
-
19
mA
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BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
Table 7:
Static characteristics …continued
Tj = 25 °C.
Symbol
Parameter
Conditions
IG1-S
gate1 cut-off current
VG2-S = VDS(A) = 0 V
amplifier A; VG1-S(A) = 5 V; VDS(B) = 0 V
gate2 cut-off current
IG2-S
Min
Typ
Max Unit
-
-
50
nA
amplifier B; VG1-S(A) = 0 V; ID(B) = 0 A
-
-
50
nA
VG2-S = 4 V; VG1-S = VDS(A) = VDS(B) = 0 V;
-
-
20
nA
[1]
RG1 connects gate1 (A) to VGG = 5 V (see Figure 3).
[2]
RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
001aac742
20
ID
(mA)
16
(1)
G1B
DB
(2)
12
G2
S
(3)
G1A
8
DA
RG1
(4)
VGG
4
(6)
001aac881
(5)
0
0
1
2
3
4
5
VGG (V)
(1) ID(A); RG1 = 47 kΩ.
VGG = 5 V: amplifier A is on; amplifier B is off.
(2) ID(A); RG1 = 68 kΩ.
VGG = 0 V: amplifier A is off; amplifier B is on.
(3) ID(A); RG1 = 100 kΩ.
(4) ID(B); RG1 = 100 kΩ.
(5) ID(B); RG1 = 68 kΩ.
(6) ID(B); RG1 = 47 kΩ.
VDS(A) = VDS(B) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 2. Drain currents of MOSFET A and B as function
of VGG
Fig 3. Functional diagram
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Rev. 01 — 28 July 2005
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BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8:
Dynamic characteristics for amplifier A
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA. [1]
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
yfs
forward transfer admittance
Tj = 25 °C
25
30
40
mS
Ciss(G1)
input capacitance at gate1
f = 100 MHz
-
2.2
2.7
pF
Ciss(G2)
input capacitance at gate2
f = 1 MHz
-
3.5
-
pF
Coss
output capacitance
f = 100 MHz
-
0.9
-
pF
Crss
reverse transfer capacitance
f = 100 MHz
-
20
-
fF
Gtr
power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
30
34
38
dB
f = 400 MHz; GS = 2 mS; GL = 1 mS
26
30
34
dB
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
NF
noise figure
21
25
29
dB
f = 11 MHz; GS = 20 mS; BS = 0 S
-
3.0
-
dB
f = 400 MHz; YS = YS(opt)
-
1.3
-
dB
-
1.4
-
dB
at 0 dB AGC
90
-
-
dBµV
at 10 dB AGC
-
90
-
dBµV
f = 800 MHz; YS = YS(opt)
Xmod
cross-modulation
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 20 dB AGC
-
99
-
dBµV
at 40 dB AGC
100
105
-
dBµV
[1]
For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V.
[2]
Measured in Figure 29 test circuit.
9397 750 14955
Product data sheet
[2]
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Rev. 01 — 28 July 2005
6 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.1.1 Graphs for amplifier A
001aac882
35
ID
(mA)
30
001aaa883
32
(1)
(1)
ID
(mA)
(2)
(2)
(3)
24
25
(3)
(4)
(4)
20
(5)
16
(5)
(6)
15
(7)
10
(8)
(6)
8
(9)
5
(7)
0
0
0.4
0.8
1.2
1.6
2.0
VG1-S (V)
0
0
4
6
VDS (V)
(1) VG2-S = 4 V.
(1) VG1-S(A) = 1.9 V.
(2) VG2-S = 3.5 V.
(2) VG1-S(A) = 1.8 V.
(3) VG2-S = 3 V.
(3) VG1-S(A) = 1.7 V.
(4) VG2-S = 2.5 V.
(4) VG1-S(A) = 1.6 V.
(5) VG2-S = 2 V.
(5) VG1-S(A) = 1.5 V.
(6) VG2-S = 1.5 V.
(6) VG1-S(A) = 1.4 V.
(7) VG2-S = 1 V.
(7) VG1-S(A) = 1.3 V.
VDS(A) = 5 V; Tj = 25 °C.
2
(8) VG1-S(A) = 1.2 V.
(9) VG1-S(A) = 1.1 V.
VDS(A) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 4. Amplifier A: transfer characteristics; typical
values
Fig 5. Amplifier A: output characteristics; typical
values
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Rev. 01 — 28 July 2005
7 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac884
40
001aac885
(1)
25
ID
(mA)
yfs
(mS)
(1)
(2)
20
30
(3)
(2)
(4)
15
(5)
20
(6)
(3)
(7)
10
10
(4)
5
(5)
(7)
0
0
(6)
8
0
16
24
32
0
2
4
ID (mA)
(1) VG2-S = 4 V.
(1) RG1(A) = 39 kΩ.
(2) VG2-S = 3.5 V.
(2) RG1(A) = 47 kΩ.
(3) VG2-S = 3 V.
(3) RG1(A) = 68 kΩ.
(4) VG2-S = 2.5 V.
(4) RG1(A) = 82 kΩ.
(5) VG2-S = 2 V.
(5) RG1(A) = 100 kΩ.
(6) VG2-S = 1.5 V.
(6) RG1(A) = 120 kΩ.
(7) VG2-S = 1 V.
(7) RG1(A) = 150 kΩ.
VDS(A) = 5 V; Tj = 25 °C.
VGG = VDS (V)
6
VG2-S = 4 V; Tj = 25 °C.
Fig 6. Amplifier A: forward transfer admittance as a
function of drain current; typical values
Fig 7. Amplifier A: drain current as a function of VDS
and VGG; typical values
001aac886
20
ID
(mA)
16
12
8
4
0
0
1
2
3
4
5
Vsupply (V)
VG2-S = 4 V, Tj = 25 °C, RG1(B) = 68 kΩ (connected to ground); see Figure 3.
Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values
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Rev. 01 — 28 July 2005
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BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac887
120
001aac888
0
gain
reduction
(dB)
10
Vunw
(dBµV)
110
20
100
30
90
40
80
50
0
10
20
30
40
50
gain reduction (dB)
0
1
2
3
4
VAGC (V)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 29.
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz;
see Figure 29.
Fig 9. Amplifier A: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
Fig 10. Amplifier A: gain reduction as a function of
AGC voltage; typical values
001aac889
32
ID
(mA)
24
16
8
0
0
10
20
30
40
50
gain reduction (dB)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; Tamb = 25 °C; see Figure 29.
Fig 11. Amplifier A: drain current as a function of gain reduction; typical values
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Rev. 01 — 28 July 2005
9 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac890
102
001aac891
102
−102
bis, gis
(mS)
ϕfs
(deg)
|yfs|
|yfs|
(mS)
10
bis
1
−10
10
ϕfs
gis
10−1
10−2
10
102
1
103
10
−1
103
102
f (MHz)
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 12. Amplifier A: input admittance as a function of
frequency; typical values
001aac892
103
−103
ϕrs
(deg)
|yrs|
(µS)
ϕrs
102
−102
Fig 13. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical values
001aac893
10
bos, gos
(mS)
bos
1
|yrs|
10
1
10
102
103
−10
10−1
−1
10−2
gos
10
102
103
f (MHz)
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 14. Amplifier A: reverse transfer admittance and
phase as a function of frequency: typical values
Fig 15. Amplifier A: output admittance as a function of
frequency; typical values
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Rev. 01 — 28 July 2005
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BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A
Table 9:
Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 18 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f
s11
(MHz) Magnitude Angle
(ratio)
(deg)
s21
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude Angle
(ratio)
(deg)
Magnitude Angle
(ratio)
(deg)
50
0.987
−4.169
2.87
175.5
0.0008
83.82
0.992
−1.42
100
0.983
−8.109
2.95
171.14 0.0015
82.08
0.992
−2.86
200
0.976
−15.97
2.93
162.44 0.0028
77.50
0.990
−5.66
300
0.966
−23.844 2.89
153.77 0.0041
73.45
0.989
−8.49
400
0.952
−31.575 2.84
145.23 0.0053
69.42
0.986
−11.28
500
0.935
−35.225 2.78
136.82 0.0063
65.72
0.984
−14.03
600
0.917
−46.678 2.72
128.50 0.0072
61.48
0.981
−16.80
700
0.898
−54.094 2.65
120.44 0.0079
58.05
0.977
−19.55
800
0.876
−61.205 2.57
112.33 0.0084
52.74
0.974
−22.32
900
0.852
−68.299 2.49
104.32 0.0089
48.61
0.970
−25.10
1000
0.826
−75.321 2.41
96.42
43.86
0.967
−27.88
9397 750 14955
Product data sheet
s12
0.0091
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Rev. 01 — 28 July 2005
11 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
Table 10: Dynamic characteristics for amplifier B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 14 mA. [1]
Symbol Parameter
Conditions
Min
Typ
Max Unit
yfs
forward transfer admittance
Tj = 25 °C
26
31
41
mS
Ciss(G1)
input capacitance at gate1
f = 100 MHz
-
1.8
2.3
pF
Ciss(G2)
input capacitance at gate2
f = 1 MHz
-
3.5
-
pF
Coss
output capacitance
f = 100 MHz
-
0.8
-
pF
Crss
reverse transfer capacitance f = 100 MHz
-
20
-
fF
Gtr
power gain
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
30
34
38
dB
f = 400 MHz; GS = 2 mS; GL = 1 mS
27
31
35
dB
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
23
27
31
dB
f = 11 MHz; GS = 20 mS; BS = 0 S
-
5
-
dB
f = 400 MHz; YS = YS(opt)
-
1.3
-
dB
-
1.4
-
dB
at 0 dB AGC
90
-
-
dBµV
at 10 dB AGC
-
88
-
dBµV
at 20 dB AGC
-
94
-
dBµV
at 40 dB AGC
100
103
-
dBµV
NF
noise figure
BS = BS(opt); BL = BL(opt)
f = 800 MHz; YS = YS(opt)
Xmod
cross-modulation
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz
[1]
For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.
[2]
Measured in Figure 30 test circuit.
9397 750 14955
Product data sheet
[2]
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Rev. 01 — 28 July 2005
12 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2.1 Graphs for amplifier B
001aac894
30
ID
(mA)
(2)
ID
(mA)
001aac895
32
(1)
(3)
24
(4)
(1)
20
(2)
(3)
16
(5)
(4)
(5)
10
(6)
(6)
8
(7)
(7)
0
0
0
0.4
0.8
1.2
1.6
2
VG1-S (V)
0
(1) VG1-S(B) = 1.7 V.
(2) VG2-S = 3.5 V.
(2) VG1-S(B) = 1.6 V.
(3) VG2-S = 3 V.
(3) VG1-S(B) = 1.5 V.
(4) VG2-S = 2.5 V.
(4) VG1-S(B) = 1.4 V.
(5) VG2-S = 2 V.
(5) VG1-S(B) = 1.3 V.
(6) VG2-S = 1.5 V.
(6) VG1-S(B) = 1.2 V.
(7) VG2-S = 1 V.
(7) VG1-S(B) = 1.1 V.
6
VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 °C.
Fig 16. Amplifier B: transfer characteristics; typical
values
Fig 17. Amplifier B: output characteristics; typical
values
9397 750 14955
Product data sheet
4
VDS (V)
(1) VG2-S = 4 V.
VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C.
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
13 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac896
40
001aac897
20
ID
(mA)
yfs
(mS)
(1)
16
30
(1)
(2)
(2)
12
(3)
(4)
20
(5)
8
(3)
10
4
(4)
(5)
(7)
0
(6)
0
0
8
16
24
32
0
1
2
3
4
5
VG2-S (V)
ID (mA)
(1) VG2-S = 4 V.
(1) VDS = 5 V.
(2) VG2-S = 3.5 V.
(2) VDS = 4.5 V.
(3) VG2-S = 3 V.
(3) VDS = 4 V.
(4) VG2-S = 2.5 V.
(4) VDS = 3.5 V.
(5) VG2-S = 2 V.
(5) VDS = 3 V.
VG1-S(A) = 0 V; Tj = 25 °C.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C.
Fig 18. Amplifier B: forward transfer admittance as a
function of drain current; typical values
001aac898
20
Fig 19. Amplifier B: drain current as function of gate2
voltage; typical values
001aac899
16
ID(A)
(mA)
16
ID
(mA)
12
12
8
8
4
4
0
0
2
4
6
0
−40
VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C.
−20
−10
0
VDS(B) = 5 V; VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 °C.
Fig 20. Amplifier B: drain current as a function of drain
source voltage; typical values
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
9397 750 14955
Product data sheet
−30
IG1 (µA)
VDS (V)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
14 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac900
120
001aac901
0
gain
reduction
(dB)
10
Vunw
(dBµV)
110
20
100
30
90
40
80
50
0
20
40
60
gain reduction (dB)
0
1
2
3
4
VAGC (V)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1(B) = 150 kΩ (connected to VGG); fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 30.
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1(B) = 150 kΩ (connected to VGG); f = 50 MHz;
Tamb = 25 °C; see Figure 30.
Fig 22. Amplifier B: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
Fig 23. Amplifier B: typical gain reduction as a function
of AGC voltage; typical values
001aac902
20
ID
(mA)
16
12
8
4
0
0
20
40
60
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 kΩ (connected to VGG); f = 50 MHz; Tamb = 25 °C; see
Figure 30.
Fig 24. Amplifier B: drain current as a function of gain reduction; typical values
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Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
15 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac903
102
001aac904
102
−102
bis, gis
(mS)
|yfs|
|yfs|
(mS)
10
ϕfs
(deg)
bis
1
−10
10
ϕfs
gis
10−1
10−2
10
102
1
103
10
−1
103
102
f (MHz)
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
Fig 25. Amplifier B: input admittance as a function of
frequency; typical values
001aac905
103
−103
ϕrs
(deg)
|yrs|
(µS)
ϕrs
102
−102
Fig 26. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
001aac906
10
bos, gos
(mS)
bos
1
|yrs|
gos
10
1
10
102
103
−10
10−1
−1
10−2
10
102
103
f (MHz)
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
Fig 27. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
Fig 28. Amplifier B: output admittance as a function of
frequency; typical values
9397 750 14955
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
16 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2.2 Scattering parameters for amplifier B
Table 11: Scattering parameters for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 14 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
s21
Magnitude
(ratio)
Angle
(deg)
50
0.993
−3.018 3.07
100
0.992
200
300
Magnitude
(ratio)
s12
Angle
(deg)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
176.04 0.0004
95.97
0.991
−1.39
−6.186 3.07
172.05 0.0011
90.33
0.990
−2.79
0.987
−12.43 3.09
164.13 0.0024
85.03
0.988
−5.49
0.979
−18.60 3.02
156.28 0.0036
82.94
0.986
−8.21
400
0.969
−24.62 2.99
148.48 0.0046
81.97
0.983
−10.91
500
0.957
−30.72 2.95
140.69 0.0056
81.03
0.980
−13.63
600
0.943
−36.71 2.90
132.87 0.0065
79.77
0.977
−16.40
700
0.927
−42.77 2.86
125.21 0.0074
79.04
0.973
−19.13
800
0.907
−48.91 2.79
117.22 0.0082
79.42
0.969
−21.93
900
0.885
−54.77 2.736
109.29 0.0086
75.47
0.964
−24.85
1000
0.858
−61.01 2.675
101.18 0.0092
73.48
0.958
−27.75
9397 750 14955
Product data sheet
s22
Magnitude
(ratio)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
17 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
9. Test information
VDS(B)
VAGC
5V
4.7 nF
10 kΩ
4.7 nF
50 Ω
DB
G1B
4.7 nF
G2
4.7 nF
RGEN
50 Ω
L1
2.2 µH
BF1207
G1A
50 Ω
S
4.7 nF
DA
L2
2.2 µH
RG1
RL
50 Ω
4.7 nF
Vi
VDS(A)
VGG
5V
5V
001aac907
Fig 29. Cross-modulation test set-up for amplifier A
VDS(B)
VAGC
5V
4.7 nF
10 kΩ
4.7 nF
RGEN
50 Ω
50 Ω
4.7 nF
G2
BF1207
G1A
50 Ω
4.7 nF
DB
G1B
4.7 nF
Vi
L1
2.2 µH
RG1
RL
50 Ω
S
DA
L2
2.2 µH
4.7 nF
VGG
VDS(A)
0V
5V
001aac908
Fig 30. Cross-modulation test set-up for amplifier B
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Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
18 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
10. Package outline
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
SOT363
JEDEC
JEITA
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-11-08
Fig 31. Package outline SOT363
9397 750 14955
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
19 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
11. Revision history
Table 12:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BF1207_1
20050728
Product data sheet
-
9397 750 14955
-
9397 750 14955
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
20 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
14. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14955
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 28 July 2005
21 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
17. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.1.1
8.1.2
8.2
8.2.1
8.2.2
9
10
11
12
13
14
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics for amplifier A. . . . . . . 6
Graphs for amplifier A . . . . . . . . . . . . . . . . . . . . 7
Scattering parameters for amplifier A . . . . . . . 11
Dynamic characteristics for amplifier B. . . . . . 12
Graphs for amplifier B . . . . . . . . . . . . . . . . . . . 13
Scattering parameters for amplifier B . . . . . . . 17
Test information . . . . . . . . . . . . . . . . . . . . . . . . 18
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Contact information . . . . . . . . . . . . . . . . . . . . 21
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 28 July 2005
Document number: 9397 750 14955
Published in The Netherlands
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