Infineon IPP057N08N3G Optimos 3 power-transistor features n-channel, normal level Datasheet

IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
OptiMOS®3 Power-Transistor
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
V DS
80
V
R DS(on),max (SMD)
5.4
mΩ
ID
80
A
• Very low on-resistance R DS(on)
previous engineering
sample codes:
IPP06CN08N
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
Package
PG-TO220-3
PG-TO262-3
PG-TO263-3
Marking
057N08N
057N08N
054N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
80
T C=100 °C
80
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 Ω
210
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
150
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
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2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
80
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=90 µA
2
2.8
3.5
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=80 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=80 A
-
4.9
5.7
mΩ
V GS=6 V, I D=40 A
-
6.3
9.9
V GS=10 V, I D=80 A,
(SMD)
-
4.6
5.4
V GS=6 V, I D=40 A,
(SMD)
-
6.0
9.6
-
2.2
-
Ω
52
103
-
S
Drain-source on-state resistance
R DS(on)
Gate resistance
RG
Transconductance
g fs
1)
2)
|V DS|>2|I D|R DS(on)max,
I D=80 A
J-STD20 and JESD22
See figure 3
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 2
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
3570
4750
-
963
1280
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
36
54
Turn-on delay time
t d(on)
-
18
-
Rise time
tr
-
66
-
Turn-off delay time
t d(off)
-
38
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
19
25
Gate to drain charge
Q gd
-
11
16
-
19
27
V GS=0 V, V DS=40 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=80 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 4)
V DD=40 V, I D=80 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
52
69
Gate plateau voltage
V plateau
-
5.2
-
Output charge
Q oss
-
70
93
nC
-
-
80
A
-
-
320
-
1.0
1.2
V
-
72
-
ns
-
130
-
nC
V DD=40 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
Rev. 1.0
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
V R=40 V, I F=I S,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
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2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
180
100
150
80
120
I D [A]
P tot [W]
60
90
40
60
20
30
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
100
Z thJC [K/W]
I D [A]
100 µs
1 ms
0.5
0.2
0.1
10 ms
101
10-1
DC
0.05
0.02
0.01
single pulse
100
10
10-2
-1
10
0
10
1
10
2
V DS [V]
Rev. 1.0
10-5
10-4
10-3
10-2
10-1
100
t p [s]
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2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
320
20
10 V
8V
7V
280
16
6.5 V
240
R DS(on) [mΩ]
I D [A]
200
6V
160
120
5.5 V
5V
4.5 V
12
8
6V
5.5 V
6.5 V
7V
8V
80
10 V
4
5V
40
4.5 V
0
0
0
1
2
3
4
5
0
40
V DS [V]
80
120
160
120
160
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
180
160
150
120
g fs [S]
I D [A]
120
90
80
60
175 °C
40
25 °C
30
0
0
0
2
4
6
8
Rev. 1.0
0
40
80
I D [A]
V GS [V]
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2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=80 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
12
4
10
3
900 µA
90 µA
98 %
V GS(th) [V]
R DS(on) [mΩ]
8
6
typ
2
4
1
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
25 °C
Coss
I F [A]
102
25 °C, 98%
101
Crss
101
100
0
20
40
60
80
V DS [V]
Rev. 1.0
175 °C, 98%
175 °C
102
C [pF]
103
0
0.5
1
1.5
2
V SD [V]
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2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=80 A pulsed
parameter: T j(start)
parameter: V DD
100
12
25 °C
40 V
10
20 V
60 V
8
V GS [V]
I AV [A]
100 °C
10
6
150 °C
4
2
1
0
0.1
1
10
100
1000
0
20
t AV [µs]
40
60
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
90
V GS
Qg
85
V BR(DSS) [V]
80
75
V g s(th)
70
65
Q g(th)
Q sw
Q gs
60
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.0
page 7
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO263-3 (D²-Pak)
Rev. 1.0
page 8
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO262-3 (I²-Pak)
Rev. 1.0
page 9
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO220-3
Rev. 1.0
page 10
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
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Rev. 1.0
page 11
2008-01-25
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