Rohm MMSTA28 Npn general purpose transistor Datasheet

SSTA28 / MMSTA28
Transistors
NPN general purpose transistor
SSTA28 / MMSTA28
zFeatures
1) BVCES < 80V (Ic=100µA)
zExternal dimensions (Unit : mm)
SSTA28
2.9±0.2
MMSTA28
SMT3
RAT
T146
3000
2.9±0.2
1.1 +0.2
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
Unit
V
V
V
A
W
°C
°C
(1) Emitter
(2) Base
(3) Collector
All terminals have same dimensions
MMSTA28
(1)
(2)
0.2
1.6 +
−0.1
0~0.1
(3)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
+0.1
0.15 −0.06
0.4 +0.1
−0.05
All terminals have same dimensions
0.3Min.
Limits
80
80
12
0.3
0.2
150
−55 to +150
0.2Min.
+0.1
0.15 −0.06
0.4 +0.1
−0.05
zAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
0~0.1
(3)
ROHM : SST3
JEDEC : SOT-23
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
0.45±0.1
(2)
0.2
1.3 +
−0.1
(1)
2.4±0.2
SSTA28
SST3
RAT
T116
3000
0.95 0.95
2.8±0.2
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
0.95 +0.2
−0.1
1.9±0.2
zPackage, marking and packaging specifications
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BVCBO
BVCES
BVEBO
ICBO
Min.
80
80
12
−
Typ.
−
−
−
−
Max.
−
0.1
Unit
V
V
V
µA
IEBO
−
−
−
−
µA
µA
VEB = 10V
ICES
0.1
0.5
VCE(sat) 1
−
0.7
1.2
V
IC/IB = 10mA/10µA
VCE(sat) 2
−
0.8
1.5
V
IC/IB = 100mA/0.1mA
VBE(on)
−
10000
10000
1.4
2.0
−
−
−
8.0
V
DC current transfer ratio
hFE
Transition frequency
fT
COb
Output Capecitance
125
−
−
200
−
5.0
−
−
−
MHz
pF
Conditions
IC = 100µA
IC = 100µA
IE = 10µA
VCB = 60V
VCE = 10V
VCE/IB = 5V/100mA
VCE = 5V , IC = 10mA
VCE = 5V , IC = 100mA
VCE = 5V , IE = 10mA , f = 100MHz
VCB = 10V , IE = 0 , f = 1MHz
Rev.A
1/2
SSTA28 / MMSTA28
Transistors
zElectrical characteristic curves
100
50
45
40
35
30
25
20
15
300
250
10
200
5
150
100
50
0
70
60
0.8
50
0.6
30
0.4
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
100k
hFE-DC CURRENT GAIN
25°C
50k
−40°C
20k
10k
5k
2k
1
2
5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (mA)
1.4
1.2
1.0
Ta= −40°C
0.8
25°C
0.6
125°C
0.4
0.2
0
1
2
5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (mA)
100
VCE=5V
f=1MHz
Ta=25°C
50
1.8
Ta= −40°C
1.4
25°C
1.2
1.0
125°C
20
10
5
Cib
0.8
2
0.6
0.4
1
2
5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (mA)
Fig.7 Base emitter "ON" voltage
vs collector current
1
2
1
0.5
Cob
1
2
5
10
20
REVERSE BIAS VOLTAGE (V)
5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs. collector
current ( ΙΙ )
2.2
Ic/IB=1000
2.0
1.8
Ta= −40°C
1.6
1.4
25°C
1.2
1.0
125°C
0.8
0.6
0.4
1
2
5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (mA)
Fig.6 Base emitter saturation voltage
vs collector current
Fig.5 Collecor emitter saturation
voltage vs collector current
CAPACITANCE (pF)
VBE(ON) BASE EMITTER VOLTAGE (V)
Ic/IB=1000
1.6
2.0
1.6
2k
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1.8
Fig.4 DC current gain vs. collector
current
2.2
5k
Fig.2 Typical output characteristics
VCE(SAT) COLLECTOR EMITTER SATURATION
VOLTAGE (V)
VCE=5V
1V
10k
VCE-COLLECTOR-EMITTER VOLTAGE (V)
Fig.1 Grounded emitter output
characteristics
Ta=25°C
3V
20k
IB=0µA
0
VCE-COLLECTOR-EMITTER VOLTAGE (V)
200k
VCE=5V
50k
0.2
10
IB=0µA
0
1.0
40
Ta=25°C
100k
1.2
80
VCE(SAT) COLLECTOR EMITTER SATURATION
VOLTAGE (V)
350
200k
Ta=25°C
1.4
50
Fig.8 Capacitance
vs reverse bias voltage
1000
CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
400
1.6
90
hFE-DC CURRENT GAIN
Ta=25°C
450
IC-COLLECTOR CURRENT (mA)
IC-COLLECTOR CURRENT (mA)
500
Ta=25°C
VCE=10V
500
200
100
50
20
10
1
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.9 Current gain-bandwdth product
vs collector current
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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