KEC MJD117L Epitaxial planar pnp transistor (monolithic construction with built in base-emitter shunt resistors industrial use.) Datasheet

SEMICONDUCTOR
MJD117/L
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A
FEATURES
I
C
J
Low Collector-Emitter Saturation Voltage.
K
Q
Straight Lead (IPAK, "L" Suffix)
O
Complementary to MJD112/L.
M
B
VCE=-4V, IC=-1A.
E
: hFE=1000(Min.),
D
High DC Current Gain.
H
MAXIMUM RATING (Ta=25
P
F
)
2
L
3
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-100
V
1. BASE
Collector-Emitter Voltage
VCEO
-100
V
3. EMITTER
Emitter-Base Voltage
VEBO
-5
V
Collector Current
DC
Pulse
DC
Collector Power
Ta=25
Dissipation
Tc=25
-50
mA
1.0
PC
DPAK
A
-4
IB
2. COLLECTOR
I
A
C
J
W
20
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
Storage Temperature Range
Tj
150
Tstg
-55 150
K
Junction Temperature
Q
B
Base Current
-2
IC
P
H
E
G
C
F
B
1
R1
R2
= 10kΩ
= 0.6kΩ
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_ 0.2
5.0 +
_
1.10 + 0.2
_ 0.2
2.70 +
_ 0.1
2.30 +
1.00 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.20
2.00 +
_ 0.10
0.50 +
_ 0.10
0.91+
_ 0.1
0.90 +
_ 0.10
1.00 +
0.95 MAX
D
CHARACTERISTIC
1
F
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
F
2
L
3
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_
5.0 + 0.2
_ 0.2
1.10 +
_ 0.6
9.50 +
_ 0.1
2.30 +
_ 0.1
0.76 +
1.0 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_
2.0 + 0.2
_ 0.1
0.50 +
_ 0.1
1.0 +
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
E
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
VCEO(SUS)
IC=-30mA, IB=0
-100
-
-
ICEO
VCE=-50V, IB=0
-
-
-20
ICBO
VCB=-100V, IE=0
-
-
-20
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-2
DC Current Gain
hFE
500
-
-
VCE=-3V, IC=-2A
1,000
12,000
-
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
VCE=-3V, IC=-0.5A
A
mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-2A, IB=-8mA
-
-
-2.0
V
Base-Emitter On Voltage
VBE(ON)
VCE=-3V, IC=-2A
-
-
-2.8
V
25
-
-
MHz
-
-
200
pF
Current Gain Bandwidth Product
Collector Output Capacitance
2003. 3. 27
Revision No : 4
fT
Cob
VCE=-10V, IC=0.75A, f=1MHz
VCB=-10V, IE=0, f=0.1MHz
1/2
MJD117/L
VCE(sat) , V BE(sat) - I C
h FE - I C
5k
SATURATION VOLTAGE
VCE(sat) , V BE(sat) (V)
3k
DC CURRENT GAIN h FE
-10
VCE =-3V
1k
500
300
100
50
-0.01
-0.03
-0.1
-0.3
-1
-3
-3
VBE(sat)
-1
VCE(sat)
-0.5
-0.3
-0.1
-0.01
-5
-0.03
-0.1
-0.3
COLLECTOR CURRENT I C (A)
C ob - VCB
P C - Ta
POWER DISSIPATION P C (W)
25
300
100
50
30
10
-0.1
-1
COLLECTOR CURRENT I C (mA)
500
CAPACITANCE C ob (pF)
I C/IB =250
-5
-0.3
-1
-3
-10
-30 -50
COLLECTOR-BASE VOLTAGE VCB (V)
-3 -5
1 Tc=25 C
2 Ta=25 C
1
20
15
10
5
2
0
0
50
100
150
200
CASE TEMPERATURE Ta ( C)
SAFE OPERATING AREA
COLLECTOR CURRENT I C (A)
-10
I C MAX.(PULSED) *
-5
-3
10
I C MAX.
(CONTINUOUS)
DC OPERATION
Tc=25 C
-1
1m
5m
S*
0µ
50
0µ
S*
S*
S*
-0.5
-0.3
-0.1
* SINGLE NONREPETIVE
PULSE Tc=25 C
-0.05
-0.03
-0.01
CURVES MUST BE DREATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-1
-3
-10
-30
-100 -200
COLLECTOR-EMITTER VOLTAGE V CE (V)
2003. 3. 27
Revision No : 4
2/2
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