ZSELEC EMB4S Super fast surface mount glass passivated bridge rectifier Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
EMB1S – EMB6S
1.0A SUPER FAST SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
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G
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Flammability 94V-O
B
-
+
~
~
H
D
C
A
MB-S
Dim
Min
Max
4.50
4.95
A
3.60
4.10
B
0.15
0.35
C
—
0.20
D
7.00
6.40
E
0.50
1.10
G
1.30
1.70
H
2.30
2.70
J
2.30
2.70
K
—
3.00
L
All Dimensions in mm
L
Mechanical Data
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J
Case: MB-S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight: 0.22 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
K
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @TA = 40°C
Average Rectified Output Current (Note 2) @TA = 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I2t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
Symbol
EMB1S
EMB2S
VRRM
VRWM
VR
100
200
VR(RMS)
70
140
EMB6S
Unit
400
600
V
280
560
V
EMB4S
IO
1.0
A
IFSM
35
A
I2t
5.0
A2s
@IF = 1.0A
VFM
@TA = 25°C
@TA = 125°C
IRM
5.0
500
µA
Reverse Recovery Time (Note 4)
trr
35
nS
Typical Junction Capacitance per leg (Note 3)
Cj
13
pF
Typical Thermal Resistance per leg (Note 1)
RJA
RJL
62.5
25
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Peak Reverse Current
At Rated DC Blocking Voltage
0.95
1.25
1.7
V
Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
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1.0
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)
EMB1S – EMB6S
0.8
0.6
0.4
0.2
Single phase half-wave
60 Hz resistive or inductive load
0
25
50
75
100
125
150
175
Tj = 25°C
Pulse width = 300µs
10
1.0
0.1
0.01
0
200
TA, AMBIENT TEMPERATURE ( C)
Fig. 1 Forward Derating Curve
40
0.4
0.6
0.8
100
1.0
1.2
1.4
Tj = 25 C
f = 1MHz
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
20
10
1
10
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
1
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
5 Reverse Recovery Time Characteristic and Test Circuit
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