Fairchild FDJ129 P-channel -2.5 vgs specified powertrench mosfet Datasheet

FDJ129P
P-Channel -2.5 Vgs Specified PowerTrench MOSFET
General Description
Features
This P-Channel -2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –4.2 A, –20 V.
Applications
• Low gate charge
• Battery management
• High performance trench technology for extremely
RDS(ON) = 70 mΩ @ VGS = –4.5 V
RDS(ON) = 120 mΩ @ VGS = –2.5 V
low RDS(ON)
• Load switch
• Compact industry standard SC75-6 surface mount
package
S
G
Bottom Drain
S
SC75-6 FLMP
S
S
S
Absolute Maximum Ratings
Symbol
4
3
5
2
6
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
–4.2
A
– Continuous
(Note 1a)
– Pulsed
–16
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
1.6
W
–55 to +150
°C
77
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.A
FDJ129P
7’’
8mm
3000 units
2004 Fairchild Semiconductor Corporation
FDJ129P Rev F1 W)
FDJ129P
July 2004
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
ID = –250 µA
–20
Typ
Max
Units
Off Characteristics
V
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA,Referenced to 25°C
VDS = –16 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–100
nA
On Characteristics
–18
mV/°C
(Note 2)
ID = –250 µA
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA,Referenced to 25°C
3
54
91
72
ID(on)
On–State Drain Current
VGS = –4.5 V, ID = –4.2 A
ID = –3.3 A
VGS = –2.5 V,
VGS = –4.5 V, ID = –4.2,TJ=125°C
VGS = –4.5 V, VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
–0.6
–1.1
–1.5
V
mV/°C
70
120
100
–8
mΩ
A
ID = –4.2 A
11
S
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
585
pF
124
pF
61
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
(Note 2)
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
10
20
ns
9
18
ns
td(off)
Turn–Off Delay Time
17
30
ns
tf
Turn–Off Fall Time
10
20
ns
Qg
Total Gate Charge
4
6
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –10 V, ID = –4.2 A,
VGS = –4.5 V
1.1
nC
1.2
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forwar Voltage
VGS = 0 V,
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
IF = –4.2 A,
diF/dt = 100 A/µs
IS = –1.5 A
–0.7
(Note 2)
–1.2
V
16
nS
13
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
77°C/W when mounted
on a 1in2 pad of 2 oz
copper.
b)
110°C/W when mounted
on a minimum pad of 2 oz
copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDJ129P Rev F1 (W)
FDJ129P
Electrical Characteristics
FDJ129P
Typical Characteristics
1.8
-3.5V
-ID, DRAIN CURRENT (A)
VGS=-4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
16
-3.0V
12
-2.5V
8
4
-2.0V
0
VGS=-2.5V
1.6
1.4
-3.0V
-3.5V
1.2
-4.0V
-4.5V
1
0.8
0
1
2
3
4
0
4
8
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
0.22
ID = -4.2A
VGS = -4.5V
1.3
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
16
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1.1
1
0.9
0.8
0.7
ID = -2.1A
0.18
0.14
o
TA = 125 C
0.1
o
TA = 25 C
0.06
0.02
-50
-25
0
25
50
75
100
125
1
150
2
Figure 3. On-Resistance Variation
withTemperature.
100
TA = -55 C
-IS, REVERSE DRAIN CURRENT (A)
o
o
25 C
9
o
125 C
6
3
0
0.5
1
1.5
2
4
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
12
VDS = -5V
3
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
-ID, DRAIN CURRENT (A)
12
-ID, DRAIN CURRENT (A)
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
VGS = 0V
10
o
TA = 125 C
1
o
25 C
0.1
o
-55 C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDJ129P Rev F1 (W)
FDJ129P
Typical Characteristics
800
VDS = -5V
ID = -4.2A
-10V
4
-15V
3
2
1
600
400
COSS
200
CRSS
0
0
0
1
2
3
4
5
0
5
Qg, GATE CHARGE (nC)
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
RDS(ON) LIMIT
10
P(pk), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
f = 1 MHz
VGS = 0 V
CISS
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
100µs
1ms
10ms
100ms
1s
10s
DC
1
VGS = -4.5V
SINGLE PULSE
RθJA = 110oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 110°C/W
TA = 25°C
8
6
4
2
0
0.01
0.1
1
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
10
100
1000
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
o
RθJA = 110 C/W
0.
0.1
0.1
P(pk)
0.0
5
0.0
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDJ129P Rev F1 (W)
FDJ129P
Dimensional Outline and Pad Layout
FDJ129P Rev F1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ActiveArray™
FASTr™
Bottomless™ FPS™
CoolFET™
FRFET™
CROSSVOLT™ GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™ HiSeC™
E2CMOS™
I2C™
EnSigna™
i-Lo™
FACT™
ImpliedDisconnect™
FACT Quiet Series™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
Across the board. Around the world.™ OPTOPLANAR™
PACMAN™
The Power Franchise
POP™
Programmable Active Droop™
Power247™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
Similar pages