Fairchild FDMS9600S Dual n-channel powertrenchâ® mosfet Datasheet

FDMS9600S
tm
Dual N-Channel PowerTrench® MOSFET
Q1: 30V, 32A, 8.5mΩ Q2: 30V, 30A, 5.5mΩ
Features
General Description
Q1: N-Channel
This device includes two specialized MOSFETs in a unique dual
„ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 12A
Power 56 package.
It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
„ Max rDS(on) = 12.4mΩ at VGS = 4.5V, ID = 10A
utilization. The low switching loss "High Side" MOSFET is com-
Q2: N-Channel
plemented by a Low Conduction Loss "Low Side" SyncFET.
„ Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 16A
Applications
„ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 14A
Synchronous Buck Converter for:
„ Low Qg high side MOSFET
„ Low rDS(on) low side MOSFET
„ Notebook System Power
„ Thermally efficient dual Power 56 package
„ General Purpose Point of Load
„ Pinout optimized for simple PCB design
„ RoHS Compliant
G1
D1
D1
G2
D1
S1/D2
S2
Q2
5
D1
S2
6
3
7
2
8
S2
4
Q1
1
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Drain to Source Voltage
Parameter
Q1
30
Q2
30
Units
V
Gate to Source Voltage
±20
±20
V
Drain Current
32
30
55
108
12
16
-Continuous (Package limited) TC = 25°C
TC = 25°C
-Continuous (Silicon limited)
ID
TA = 25°C
-Continuous
-Pulsed
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
60
60
(Note 1a)
2.5
(Note 1b)
1.0
Operating and Storage Junction Temperature Range
A
W
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
120
RθJC
Thermal Resistance, Junction to Case
3
°C/W
1.2
Package Marking and Ordering Information
Device Marking
FDMS9600S
Device
FDMS9600S
©2008 Fairchild Semiconductor Corporation
FDMS9600S Rev.D1
Package
Power 56
1
Reel Size
13”
Tape Width
12mm
Quantity
3000 units
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FDMS9600S Dual N-Channel PowerTrench® MOSFET
September 2008
Symbol
Parameter
Test Conditions
Type
Min
Q1
Q2
30
30
Typ
Max
Units
Off Characteristics
ID = 250µA, VGS = 0V
ID = 1mA, VGS = 0V
V
BVDSS
Drain to Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
Q1
Q2
1
500
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS= 0V
Q1
Q2
±100
±100
nA
nA
VGS = VDS, ID = 250µA
VGS = VDS, ID = 1mA
Q1
Q2
3
3
V
ID = 250µA, referenced to 25°C
ID = 1mA, referenced to 25°C
Q1
Q2
35
29
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
ID = 250µA, referenced to 25°C
ID = 1mA, referenced to 25°C
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 12A , TJ = 125°C
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 14A
VGS = 10V, ID = 16A , TJ = 125°C
VDD = 10V, ID = 12A
VDD = 10V, ID = 16A
1
1
1.5
1.8
Q1
Q2
-4.5
-6.0
Q1
7.0
9.2
8.6
8.5
12.4
13.0
Q2
4.5
5.3
5.4
5.5
7.0
8.3
Q1
Q2
54
68
Q1
Q2
1280
2300
1705
3060
pF
Q1
Q2
525
1545
700
2055
pF
Q1
Q2
80
250
120
375
pF
Q1
Q2
1.0
1.7
Q1
Q2
13
17
23
31
ns
Q1
Q2
6
11
12
20
ns
Q1
Q2
42
54
67
86
ns
Q1
Q2
12
32
22
51
ns
Q1
Q2
9
21
13
29
nC
Q1
Q2
3
8
nC
Q1
Q2
2.7
6.5
nC
mV/°C
mΩ
S
FDMS9600S Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15V, VGS = 0V, f= 1MHz
f = 1MHz
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
FDMS9600S Rev.D1
VDD = 10V, ID = 1A,
VGS = 10V, RGEN = 6Ω
Q1
VDD = 15V, VGS = 4.5V, ID = 12A
Q2
VDD = 15V, VGS = 4.5V, ID = 16A
2
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Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
2.1
3.5
A
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
VGS = 0V, IS = 2.1A
V = 0V, IS = 3.5A
Source to Drain Diode Forward Voltage GS
VGS = 0V, IS = 8.2A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Q1
IF = 12A, di/dt = 100A/µs
Q2
IF = 16A, di/dt = 300A/µs
Q1
Q2
(Note 2)
(Note 2)
(Note 2)
Q1
Q2
Q2
0.7
0.4
0.5
1.2
1.0
1.0
Q1
Q2
33
27
ns
Q1
Q2
20
33
nC
V
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a.50°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 120°C/W when mounted on a
minimum pad of 2 oz copper
FDMS9600S Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMS9600S Rev.D1
3
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VGS = 10V
50
ID, DRAIN CURRENT (A)
2.8
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
VGS = 3.5V
40
30
VGS = 3V
VGS = 6V
VGS = 4.5V
20
VGS = 4V
10
0
0.0
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.6
2.4
2.2
1.4
1.0
0.8
1.1
1.0
0.9
0.8
0
25
50
75
100
125
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDD = 5V
40
30
TJ =125oC
TJ = 25oC
10
TJ = -55oC
3.5
Figure 5. Transfer Characteristics
FDMS9600S Rev.D1
50
60
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
TJ = 125oC
10
5
TJ = 25oC
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
1.5
2.0
2.5
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 6A
15
0
60
0
1.0
20
30
40
ID, DRAIN CURRENT(A)
20
150
Figure 3. Normalized On-Resistance
vs Junction Temperature
20
10
25
TJ, JUNCTION TEMPERATURE (oC)
50
0
30
1.2
-25
VGS = 6V
1.2
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.3
0.7
-50
VGS = 4V
VGS = 10V
1.6
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.4
VGS =3.5V
1.8
2.0
ID = 12A
VGS =10V
1.5
VGS = 4.5V
2.0
Figure 1. On-Region Characteristics
1.6
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = 3V
FDMS9600S Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
60
VGS = 0V
10
TJ = 125oC
1
TJ = 25oC
0.1
0.01
TJ = -55oC
1E-3
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
4
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VGS, GATE TO SOURCE VOLTAGE(V)
10
2000
ID = 12A
8
1000
CAPACITANCE (pF)
VDD =10V
6
VDD = 15V
4
VDD = 20V
2
0
0
5
10
15
20
Coss
100
f = 1MHz
VGS = 0V
30
0.1
25
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
1ms
10ms
SINGLE PULSE
TJ = MAX RATE
100ms
o
RθJA = 120 C/W
0.1
1s
TA = 25oC
10s
DC
THIS AREA IS LIMITED
BY rDS(ON)
0.01
0.1
1
10
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance vs Drain
to Source Voltage
100
1
Ciss
100
300
100
VGS = 10V
o
TA = 25 C
10
1
0.5
-3
10
-2
-1
10
0
1
10
10
10
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
SINGLE PULSE
o
RθJA = 120 C/W
FDMS9600S Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
2
10
3
10
Figure 10. Single Pulse Maximum
Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
0.002
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
FDMS9600S Rev.D1
5
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2.8
VGS = 10V
VGS = 3.5V
50
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
VGS = 4V
VGS = 4.5V
40
VGS = 6V
30
VGS = 3V
20
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
10
0
0.0
0.2
0.4
0.6
0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
1.8
1.4
1.2
1.0
0.8
0.6
-50
-25
2.4
2.2
2.0
1.8
0
25
50
75
100
125
1.4
1.2
1.0
0.8
150
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VDD = 5V
40
30
TJ =125oC
TJ
= 25oC
10
TJ
= -55oC
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
10
20
30
40
ID, DRAIN CURRENT(A)
50
60
ID = 8A
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
10
8
TJ = 125oC
6
4
TJ = 25oC
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
60
VGS = 0V
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 17. Source to Drain Diode
Forward Voltage vs Source Current
Figure 16. Transfer Characteristics
FDMS9600S Rev.D1
0
Figure 15. On-Resistance vs Gate to
Source Voltage
60
0
1.0
VGS = 10V
12
2
Figure 14. Normalized On-Resistance
vs Junction Temperature
20
VGS = 3.5V
VGS = 4V
1.6
TJ, JUNCTION TEMPERATURE (oC)
50
VGS = 6V
VGS = 4.5V
14
ID = 16A
VGS =10V
1.6
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS =3V
Figure 13. Normalized on-Resistance vS Drain
Current and Gate Voltage
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 12. On-Region Characteristics
2.6
FDMS9600S Dual N-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 SyncFET)
6
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5000
ID = 16A
8
Ciss
VDD =10V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = 15V
4
VDD = 20V
2
0
0
10
20
30
40
f = 1MHz
VGS = 0V
100
0.1
50
Qg, GATE CHARGE(nC)
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 19. Capacitance vs Drain
to Source Voltage
Figure 18. Gate Charge Characteristics
FDMS9600S Rev.D1
Coss
1000
7
30
FDMS9600S Dual N-Channel PowerTrench® MOSFET
Typical Characteristics
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FDMS9600S Dual N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMS9600S Rev.D1
8
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later date.
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Datasheet contains specifications on a product that is discontinued by Fairchild
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Rev. I36
FDMS9600S Dual N-Channel PowerTrench® MOSFET
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