ON MMBT6520LT1G High voltage transistor Datasheet

MMBT6520LT1G
High Voltage Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−350
Vdc
Collector −Base Voltage
VCBO
−350
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Base Current
IB
−250
mA
Collector Current − Continuous
IC
−500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2Z M G
G
1
2Z = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT6520LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBT6520LT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 5
1
Publication Order Number:
MMBT6520LT1/D
MMBT6520LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = −1.0 mA)
V(BR)CEO
−350
−
Vdc
Collector−Base Breakdown Voltage
(IC = −100 mA)
V(BR)CBO
−350
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mA)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current
(VCB = −250 V)
ICBO
−
−50
nA
Emitter Cutoff Current
(VEB = −4.0 V)
IEBO
−
−50
nA
20
30
30
20
15
−
−
200
200
−
−
−
−
−
−0.30
−0.35
−0.50
−1.0
−
−
−
−0.75
−0.85
−0.90
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −30 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −100 mA, VCE = −10 V)
hFE
−
Collector−Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −20 mA, IB = −2.0 mA)
(IC = −30 mA, IB = −3.0 mA)
(IC = −50 mA, IB = −5.0 mA)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −20 mA, IB = −2.0 mA)
(IC = −30 mA, IB = −3.0 mA)
VBE(sat)
Base−Emitter On Voltage
(IC = −100 mA, VCE = −10 V)
VBE(on)
−
−2.0
Vdc
fT
40
200
MHz
Collector−Base Capacitance
(VCB= −20 V, f = 1.0 MHz)
Ccb
−
6.0
pF
Emitter−Base Capacitance
(VEB= −0.5 V, f = 1.0 MHz)
Ceb
−
100
pF
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −20 V, f = 20 MHz)
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2
h FE , DC CURRENT GAIN
200
VCE = 10 V
TJ = 125°C
100
25°C
70
-55°C
50
30
20
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
f,
T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
MMBT6520LT1G
100
70
50
TJ = 25°C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
1.4
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
IC
+ 10
IB
2.0
1.5
25°C to 125°C
1.0
0.5
0
-1.5
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
RqVC for VCE(sat)
-55°C to 25°C
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
100
70
50
-2.5
1.0
70 100
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
Figure 4. Temperature Coefficients
1.0k
700
500
TJ = 25°C
Ceb
30
-55°C to 125°C
RqVB for VBE
-2.0
Figure 3. “On” Voltages
td @ VBE(off) = 2.0 V
300
20
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25°C
200
t, TIME (ns)
C, CAPACITANCE (pF)
100
-1.0
0.2
10
7.0
5.0
Ccb
tr
100
70
50
3.0
30
2.0
20
1.0
0.2
50 70
2.5
-0.5
0.4
0
1.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain — Bandwidth Product
RθV, TEMPERATURE COEFFICIENTS (mV/ °C)
Figure 1. DC Current Gain
2.0
10
0.5
1.0 2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
50 100 200
1.0
Figure 5. Capacitance
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn−On Time
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3
50
70 100
MMBT6520LT1G
IC, COLLECTOR CURRENT (A)
1
10k
7.0k
5.0k
ts
3.0k
t, TIME (ns)
2.0k
1.0k
700
500
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
tf
300
200
100
1.0 s
0.01
0.001
1.0
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
10 ms
0.1
70 100
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 7. Turn−Off Time
1.0
0.7
0.5
1000
100
Figure 8. Safe Operating Area
D = 0.5
0.2
0.3
0.2
0.1
SINGLE PULSE
0.05
P(pk)
0.1
0.07
0.05
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
SINGLE PULSE
t1
ZqJC(t) = r(t) • RqJC
ZqJA(t) = r(t) • RqJA
0.03
0.02
t2
DUTY CYCLE, D = t1/t2
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
Figure 9. Thermal Response
+VCC
VCC ADJUSTED
FOR VCE(off) = 100 V
+10.8 V
2.2 k
20 k
50 W SAMPLING SCOPE
1.0 k
50
1/2MSD7000
-9.2 V
PULSE WIDTH ≈ 100 ms
tr, tf ≤ 5.0 ns
DUTY CYCLE ≤ 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
APPROXIMATELY
-1.35 V
(ADJUST FOR V(BE)off = 2.0 V)
Figure 10. Switching Time Test Circuit
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4
5.0k 10k
MMBT6520LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT6520LT1/D
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