Fairchild FJE3303H1 High voltage switch mode application Datasheet

High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Regulator
TO-126
1
1. Emitter
Absolute Maximum Ratings
Symbol
2.Collector
3.Base
TC = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
1.5
A
ICP
Collector Current (Pulse) *
3
A
IB
Base Current (DC)
0.75
A
IBP
Base Current (Pulse) *
1.5
A
PC
Collector Dissipation (TC = 25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
* Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
©2005 Fairchild Semiconductor Corporation
FJE3303 Rev. B
1
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FJE3303 High Voltage Fast-Switching NPN Power Transistor
FJE3303
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
BVCBO
Collector-Base Breakdwon Voltage
IC = 500µA, IE = 0
700
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
400
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 500µA, IC = 0
ICBO
Collector Cut-off Current
VCB = 700V, IE = 0
9
V
10
µA
10
µA
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE1
hFE2
DC Current Gain *
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1.0A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.25A
IC = 1.5A, IB = 0.5A
0.5
1.0
3.0
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.25A
1.0
1.2
V
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.1A
Cob
Output Capacitance
VCB = 10V, f = 0.1MHz
VCC = 125V, IC = 1A
IB1 = 0.2A, IB2 = -0.2A
RL = 125Ω
tON
Turn On Time
tSTG
Storge Time
tF
Fall Time
8
5
21
4
MHz
21
pF
1.1
µs
4.0
µs
0.7
µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
hFE Classification
Classification
H1
H2
hFE1
8 ~ 16
14 ~ 21
2
FJE3303 Rev. B
www.fairchildsemi.com
FJE3303 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1.6
100
VCE = 2V
1.4
1.2
IB = 120 mA
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
o
Ta = 75 C
o
Ta = 125 C
1.0
0.8
IB = 40 mA
0.6
IB = 20 mA
0.4
o
Ta = - 25 C
o
Ta = 25 C
10
0.2
0.0
0
1
2
3
4
5
6
7
8
9
1
1E-3
10
0.01
0.1
1
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
10
o
VCE(sat) [V], SATURATION VOLTAGE
o
o
Ta = 25 C
1
o
Ta = - 25 C
0.1
0.01
0.01
0.1
IC = 4 IB
Ta = 75 C
VBE(sat) [V], SATURATION VOLTAGE
Ta = 125 C
IC = 4 IB
1
o
o
1
o
o
Ta = 125 C
0.1
0.01
10
Ta = 25 C
Ta = - 25 C
IC [A], COLLECTOR CURRENT
Ta = 75 C
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Resistive Load Switching Time
10
tSTG & tF [µ s], SWITCHING TIME
tSTG & tF [µ s], SWITCHING TIME
10
tSTG
1
tF
0.1
IB1 = - IB2 = 0.2A
VCC = 125V
0.01
0.1
1
tF
0.1
IB1 = 120mA, IB2 = - 40mA
VCC = 310V
0.01
0.1
1
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
3
FJE3303 Rev. B
tSTG
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FJE3303 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Forward Biased Safe Operating Area
Figure 8. Reverse Biased Safe Operating Area
10
10
1ms
100µs
5ms
IC [A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
IC (Pulse)
IC (DC)
1
0.1
o
1
TC = 25 C
Single Pulse
IB1 = 1A, RB2 = 0
VCC = 50V, L =1 mH
0.01
1
10
100
0.1
100
1000
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
PC [W], COLLECTOR POWER DISSIPATION
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
Ta [ C], AMBIENT TEMPERATURE
4
FJE3303 Rev. B
www.fairchildsemi.com
FJE3303 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
FJE3303 High Voltage Fast-Switching NPN Power Transistor
Mechanical Dimensions
8.00 ±0.30
±0.20
3.25 ±0.20
ø3.20 ±0.10
11.00
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
13.06
0.75 ±0.10
16.10
±0.30
±0.20
1.60 ±0.10
#1
2.28TYP
[2.28±0.20]
+0.10
0.50 –0.05
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
5
FJE3303 Rev. B
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design.
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Rev. I15
6
FJE3303 Rev. B
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FJE3303 High Voltage Fast-Switching NPN Power Transistor
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