Fairchild MMBD1204 Small signal diode Datasheet

Connection Diagrams
1201
3
3
24
1
1204 3
2
1
2
3
3 1203
2NC
1
2
3 1205
1
2
1
MARKING
MMBD1201 24
MMBD1203 26
MMBD1204 27
MMBD1205 28
SOT-23
1
2
Small Signal Diodes
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Tstg
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
1.0
2.0
-55 to +150
A
A
°C
TJ
Operating Junction Temperature
150
°C
Value
Units
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Electrical Characteristics
Symbol
Parameter
VR
Breakdown Voltage
VF
Forward Voltage
IR
Reverse Current
CT
Total Capacitance
trr
Reverse Recovery Time
2001 Fairchild Semiconductor Corporation
TA = 25°C unless otherwise noted
Test Conditions
IR = 100 µA
IF = 1.0 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
VR = 20 V
VR = 50 V
VR = 50 V, TA = 150°C
VR = 0, f = 1.0 MHz
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω
Min
100
550
660
820
0.87
-
Max
Units
600
740
920
1.0
1.1
25
50
5.0
2.0
mV
mV
mV
V
V
nA
nA
µA
pF
4.0
ns
V
MMBD1200 series, Rev. C
MMBD1201 / 1203 / 1204 / 1205
MMBD1201 / 1203 / 1204 / 1205
(continued)
Typical Characteristics
150
140
130
120
110
1
Ta= 25 ° C
300
Reverse Current, IR [nA]
Reverse Voltage, V R [V]
Ta= 25 °C
2
3
5
10
20
30
50
250
200
150
100
50
0
100
Reverse Current, IR [uA]
10
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
30
50
70
100
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Ta= 25 °C
Ta= 25 ° C
700
Forward Voltage, VF [mV]
450
Forward Voltage, VF [mV]
20
Reverse Voltage, V R [V]
400
350
300
650
600
550
500
250
1
2
3
5
10
20
30
50
450
100
0.1
0.2
Forward Current, IF [uA]
0.3
0.5
1
2
3
5
10
Forward Current, IF [mA]
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.3
Ta= 25 ° C
Ta= 25 ° C
Total Capacitance [pF]
Forward Voltage, VF [V]
1.4
1.2
1.0
0.8
0.6
1.2
1.1
1.0
10
20
30
50
100
200
300
500
Forw ard C urrent, I F [m A ]
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
0
2
4
6
8
10
12
14
R everse V oltage [V ]
Figure 6. Total Capacitance vs Reverse Voltage
MMBD1200 series, Rev. C
MMBD1201 / 1203 / 1204 / 1205
Small Signal Diode
(continued)
Typical Characteristics
400
4.0
Ta= 25 °C
3.5
Current [mA]
300
3.0
2.5
2.0
IF
200
(AV
)
-A
V
100
ER
AG
ER
E
CT
IF IE
1.5
DC
U
RR
EN
TmA
0
1.0
10
20
30
40
50
0
60
50
100
150
Ambient Temperature, T A [ ° C]
Reverse Current [mA]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectified Current (IF(AV))
versus Ambient Temperature (TA)
500
Power Dissipation, PD [mW ]
Reverse Recovery Time [nS]
(continued)
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average T em perature, I O [ ° C ]
Figure 9. Power Derating Curve
MMBD1200 series, Rev. C
MMBD1201 / 1203 / 1204 / 1205
Small Signal Diode
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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