Infineon IDB04E120 Fast switching emcon diode Datasheet

IDB04E120
Fast Switching EmCon Diode
Product Summary
Feature
VRRM
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
1200
V
IF
4
A
VF
1.65
V
T jmax
150
°C
PG-TO263-3-2
• Low forward voltage
• Easy paralleling
2
1
* RoHS compliant
3
Type
Package
IDB04E120
PG-TO263-3-2
Ordering Code
-
Marking
Pin 1
D04E120
NC
PIN 2
PIN 3
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continous forward current
IF
A
TC=25°C
11.2
TC=90°C
7.1
Surge non repetitive forward current
I FSM
28
I FRM
16.5
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
W
Ptot
TC=25°C
43.1
TC=90°C
20.6
Operating and storage temperature
Soldering temperature
Tj , Tstg
TS
-55...+150
245
°C
°C
reflow soldering, MSL1
Rev.2.2
Page 1
2007-09-01
IDB04E120
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
2.9
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm 2 cooling area 1)
-
35
-
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Reverse leakage current
IR
µA
V R=1200V, T j=25°C
-
-
100
V R=1200V, T j=150°C
-
-
350
Forward voltage drop
VF
V
IF=4A, Tj=25°C
-
1.65
2.15
IF=4A, Tj=150°C
-
1.7
-
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.2
Page 2
2007-09-01
IDB04E120
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Reverse recovery time
ns
t rr
V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C
-
115
-
V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C
-
180
-
V R=800V, IF=4A, di F/dt=750A/µs, Tj=150°C
-
185
-
Peak reverse current
A
I rrm
V R=800V, IF = 4 A, diF/dt=750A/µs, Tj=25°C
-
7.15
-
V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C
-
8
-
V R=800V, IF =4A, diF /dt=750A/µs, T j=150°C
-
8.1
-
Reverse recovery charge
nC
Q rr
V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C
-
330
-
V R=800V, IF =4A, diF /dt=750A/µs, T j=125°C
-
575
-
V R=800V, IF =4A, diF /dt=750A/µs, T j=150°C
-
630
-
V R=800V, IF=4A, di F/dt=750A/µs, Tj=25°C
-
6
-
V R=800V, IF=4A, di F/dt=750A/µs, Tj=125°C
-
7.8
-
V R=800V, IF=4A, di F/dt=750A/µs, Tj=150°C
-
7.8
-
Reverse recovery softness factor
Rev.2.2
S
Page 3
2007-09-01
IDB04E120
1 Power dissipation
2 Diode forward current
Ptot = f (TC)
IF = f(TC)
parameter: Tj ≤ 150°C
parameter: Tj≤ 150°C
45
12
A
W
10
9
30
8
IF
P tot
35
7
25
6
20
5
15
4
3
10
2
5
0
25
1
50
75
100
0
25
150
°C
50
75
100
150
°C
TC
TC
3 Typ. diode forward current
4 Typ. diode forward voltage
IF = f (VF)
VF = f (Tj)
2.4
12
A
8A
V
-55°C
25°C
100°C
150°C
10
9
2
IF
VF
8
7
1.8
4A
6
1.6
5
2A
4
1.4
3
2
1.2
1
0
0
0.5
1
1.5
2
1
-60
3
V
VF
Rev.2.2
Page 4
-20
20
60
100
160
°C
Tj
2007-09-01
IDB04E120
5 Typ. reverse recovery time
6 Typ. reverse recovery charge
trr = f (diF/dt)
Qrr =f(diF/dt)
parameter: V R = 800V, T j = 125°C
parameter: VR = 800V, Tj = 125 °C
500
900
ns
nC
400
800
8A
4A
2A
750
Q rr
350
trr
8A
300
700
250
650
200
600
150
550
100
500
50
450
0
200
300
400
500
600
700
800
400
200
A/µs 1000
di F/dt
4A
2A
300
400
500
600
700
800
A/µs 1000
diF/dt
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
Irr = f (diF/dt)
S = f(diF /dt)
parameter: V R = 800V, T j = 125°C
parameter: VR = 800V, Tj = 125°C
20
12
A
8A
4A
2A
16
8A
4A
2A
10
9
S
Irr
14
12
10
8
8
7
6
6
4
5
4
200
Rev.2.2
2
300
400
500
600
700
800
0
200
A/µs 1000
di F/dt
Page 5
300
400
500
600
700
800
A/µs 1000
diF/dt
2007-09-01
IDB04E120
9 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = t p/T
10 1
IDP04E120
K/W
ZthJC
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
single pulse
0.05
0.02
10 -3
0.01
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2.2
Page 6
2007-09-01
IDB04E120
Rev.2.2
Page 7
2007-09-01
IDB04E120
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
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Rev.2.2
Page 8
2007-09-01
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