Renesas HAT2038R Silicon n channel power mos fet high speed power switching Datasheet

Preliminary
HAT2038R, HAT2038RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G1167-0600
Rev.6.00
Aug 25, 2009
Features
•
•
•
•
For Automotive Application (at Type Code “J”)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
65
87
2
G
12
5 6
D D
4
G
1, 3
2, 4
5, 6, 7, 8
34
S1
MOS1
Source
Gate
Drain
S3
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT2038R
HAT2038RJ
Avalanche energy
HAT2038R
HAT2038RJ
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
ID
Note 1
ID (pulse)
IDR
IAP Note 4
EAR Note 4
Pch Note 2
Note 3
Pch
Tch
Tstg
Value
60
±20
5
Unit
V
V
A
40
5
—
5
—
2.14
2
A
A
—
A
—
mJ
W
3
150
–55 to +150
W
°C
°C
PW ≤ 10 μs, duty cycle ≤ 1%
1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1167-0600 Rev.6.00 Aug 25, 2009
Page 1 of 7
HAT2038R, HAT2038RJ
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
HAT2038R
Zero gate voltage drain
current
HAT2038RJ
Zero gate voltage drain
current
HAT2038R
HAT2038RJ
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
5. Pulse test
REJ03G1167-0600 Rev.6.00 Aug 25, 2009
Page 2 of 7
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
Min
60
±20
—
—
—
—
—
1.2
—
—
6
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
0.043
0.056
9
520
270
100
11
40
110
Max
—
—
±10
1
0.1
—
10
2.2
0.058
0.084
—
—
—
—
—
—
—
Unit
V
V
μA
μA
μA
μA
μA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
tf
VDF
trr
—
—
—
80
0.84
40
—
1.1
—
ns
V
ns
IDSS
IDSS
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 μA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 48 V, VGS = 0
Ta = 125°C
VDS = 10 V, ID = 1 mA
ID = 3 A, VGS = 10 V Note 5
ID = 3 A, VGS = 4 V Note 5
ID = 3 A, VDS = 10 V Note 5
VDS = 10 V
VGS = 0
f = 1 MHz
VGS = 10 V, ID = 3 A,
VDD ≅ 30 V
IF = 5 A, VGS = 0 Note 5
IF = 5 A, VGS = 0
diF/dt = 50 A/μs
HAT2038R, HAT2038RJ
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
3.0
ive
Op
er
ion
at
Dr
ive
1.0
er
Op
1
0
Drain Current
Dr
2.0
0
50
at
ion
100
Ambient Temperature
10
10
PW
DC
3
Op
er
1
0.3
0.1
=
10
ion
(P
3
ms
W
(1
s
s
sh
No
≤1
0
10
Drain to Source Voltage
Ta (°C)
0μ
1m
at
Operation in
this area is
limited by RDS (on)
0.03 Ta = 25°C
1 shot Pulse
0.01
0.1 0.3
1
200
150
10 μs
30
ID (A)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2
Channel Dissipation
Pch (W)
4.0
ot)
te
6
s)
30
100
VDS (V)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
4V
3.5 V
3V
10
VDS = 10 V
Pulse Test
(A)
Pulse Test
8
ID
8
10 V
6
6
4
2.5 V
2
Drain Current
Drain Current
ID
(A)
10
25°C
4
Tc = 75°C
–25°C
2
VGS = 2 V
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
0.4
0.3
ID = 5 A
0.2
2A
0.1
1A
0
0
4
8
12
Gate to Source Voltage
16
20
VGS (V)
REJ03G1167-0600 Rev.6.00 Aug 25, 2009
Page 3 of 7
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
0.5
1
1.0
Pulse Test
0.5
0.2
0.1
VGS = 4 V
0.05
10 V
0.02
0.01
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAT2038R, HAT2038RJ
0.20
Pulse Test
0.16
1, 2 A
0.12
ID = 5 A
VGS = 4 V
0.08
1, 2, 5 A
0.04
10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
50
VDS = 10 V
Pulse Test
20
Tc = –25°C
10
5
25°C
75°C
2
1
0.5
0.1
2
5
10
2000
1000
Capacitance C (pF)
200
100
50
20
10
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
0.5
1
2
5
Crss
50
VGS = 0
f = 1 MHz
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
16
12
VDS
VDD = 10 V
25 V
50 V
40
20
8
4
VDD = 50 V
25 V
10 V
0
0
8
16
Gate Charge
24
32
Qg (nc)
REJ03G1167-0600 Rev.6.00 Aug 25, 2009
Page 4 of 7
40
1000
Switching Time t (ns)
VGS
VGS (V)
Reverse Drain Current IDR (A)
80
0
100
10
ID = 5 A
60
Coss
200
10
0.2
20
100
Ciss
500
20
Gate to Source Voltage
Reverse Recovery Time trr (ns)
1
Typical Capacitance vs.
Drain to Source Voltage
500
5
0.1
VDS (V)
0.5
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
0.2
300
td(off)
100
tf
tr
30
td(on)
10
3
1
0.1
VGS = 10 V, VDD = 30 V
PW = 5 μs, duty ≤ 1 %
0.2
0.5
1
Drain Current
2
ID (A)
5
10
HAT2038R, HAT2038RJ
Preliminary
Reverse Drain Current IDR (A)
10
8
6
10 V
5V
4
VGS = 0, –5 V
2
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
2.0
2.5
IAP = 5 A
VDD = 25 V
L = 100 μH
duty < 0.1 %
Rg ≥ 50 Ω
2.0
1.5
1.0
0.5
0
25
50
75
100
125
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.001
ot
pu
D=
PDM
lse
PW
T
PW
T
h
1s
0.0001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.0001
10 μ
D=
PDM
e
uls
0.001
tp
PW
T
PW
T
o
sh
1
100 μ
1m
10 m
100 m
1
Pulse Width PW (S)
REJ03G1167-0600 Rev.6.00 Aug 25, 2009
Page 5 of 7
150
10
100
1000
10000
HAT2038R, HAT2038RJ
Preliminary
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
1
• L • IAP2 •
2
EAR =
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDD
D.U.T
VDS
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
10 V
50 Ω
VDD
= 30 V
10%
90%
td(on)
REJ03G1167-0600 Rev.6.00 Aug 25, 2009
Page 6 of 7
10%
tr
90%
td(off)
tf
HAT2038R, HAT2038RJ
Preliminary
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
* 3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
A1
A
L1
L
y
HE
e
x
y
Z
L
L1
Detail F
Ordering Information
Part Name
HAT2038R-EL-E
HAT2038RJ-EL-E
Quantity
2500 pcs
2500 pcs
REJ03G1167-0600 Rev.6.00 Aug 25, 2009
Page 7 of 7
Shipping Container
Taping
Taping
D
E
A2
A1
A
bp
b1
c
c1
Dimension in Millimeters
Min
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
8°
0°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
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