Si4420BDY Vishay Siliconix New Product N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 13.5 0.0110 at VGS = 4.5 V 11 • TrenchFET® Power MOSFET • 100 % Rg Tested Pb-free RoHS COMPLIANT SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Conduction)a Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa IS L = 0.1 mH TA = 25 °C TA = 70 °C 9.5 10.8 7.5 50 1.26 IAS 20 20 mJ 2.5 1.4 1.6 0.9 TJ, Tstg Operating Junction and Storage Temperature Range A 2.3 EAS PD V 13.5 IDM Pulsed Drain Current Continuous Source Current (Diode ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t < 10 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 90 23 28 Unit °C/W Notes: a. Surface Mounted on FR4 Board, t ≤ 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. Document Number: 73067 S-61013-Rev. B, 12-Jun-06 www.vishay.com 1 Si4420BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min 1.0 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 µA 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Gate Threshold Voltage Forward Transconductancea VDS ≥ 5 V, VGS = 10 V µA 30 A VGS = 10 V, ID = 13.5 A 0.007 0.0085 VGS = 4.5 V, ID = 11 A 0.009 0.0110 gfs VDS = 15 V, ID = 13.5 A 50 VSD IS = 2.3 A, VGS = 0 V 0.75 1.1 Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 13.5 A 16 25 31 50 VDS = 15 V, VGS = 10 V, ID = 13.5 A 6.6 Diode Forward Voltage a Ω S V Dynamicb Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.0 Rg Gate Resistance 0.5 td(on) Turn-On Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = 2.3 A, di/dt = 100 A/µs 1.0 1.5 15 25 11 18 40 60 12 20 30 50 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 50 40 45 VGS = 10 thru 4 V 35 40 I D - Drain Current (A) I D - Drain Current (A) 30 35 30 25 20 15 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 15 TC = 125 °C 10 25 °C - 55 °C 0 0 20 5 3V 5 25 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 73067 S-61013-Rev. B, 12-Jun-06 Si4420BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 3000 2500 Capacitance (pF) 0.016 0.012 VGS = 4.5 V - 0.008 VGS = 10 V C r DS(on) - On-Resistance (Ω) 0.020 0.004 Ciss 2000 1500 1000 Coss 500 Crss 0 0.000 0 10 20 ID - 30 40 0 50 5 10 VDS Drain Current (A) - 25 30 Capacitance 10 1.6 VDS = 15 V ID = 13.5 A VGS = 10 V ID = 13.5 A 1.4 rDS(on) - On-Resistance (Normalized) 8 6 4 - Gate-to-Source Voltage (V) 20 Drain-to-Source Voltage (V) On-Resistance vs. Drain Current V GS 15 2 1.2 1.0 0.8 0 0 5 10 Qg - 15 20 25 0.6 - 50 30 - 25 0 Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.05 50 On-Resistance (Ω) TJ = 150 °C 10 0.02 0.01 0.00 1 0.00 ID = 13.5 A 0.03 - TJ = 25 °C r DS(on) I S - Source Current (A) 0.04 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 73067 S-61013-Rev. B, 12-Jun-06 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4420BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.4 50 ID = 250 µA 40 0.0 30 Power (W) V GS(th) Variance (V) 0.2 - 0.2 TA = 25 °C 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10- 2 150 10- 1 1 TJ - Temperature (°C) 10 100 600 Time (sec) Single Pulse Power Threshold Voltage 100 Limited by rDS(on) 100 µs, 10 µs 10 1 ms 1 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse 10 s dc, 100 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73067 S-61013-Rev. B, 12-Jun-06 Si4420BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73067 Document Number: 73067 S-61013-Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1