To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................. 75mΩ ¡ID ........................................................................................ 10A ¡Integrated Fast Recovery Diode (TYP.) ............ 35ns q GATE w DRAIN e SOURCE r DRAIN q e MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 30 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 10 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 40 10 A A IS ISM Source current Source current (Pulsed) 10 40 A A PD Tch Maximum power dissipation Channel temperature 20 –55 ~ +150 W °C –55 ~ +150 °C 0.26 g Tstg — Parameter Conditions L = 30µH Storage temperature Weight Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Typ. Max. 30 — — — — ±0.1 V µA — 1.0 — 1.5 0.1 2.0 mA V — 58 75 mΩ — — 90 0.29 150 0.375 mΩ V — — 7.5 360 — — S pF — — 160 55 — — pF pF — — 11 25 — — ns ns — 35 — ns — — 23 1.0 — 1.5 ns V — — — 35 6.25 — °C/W ns ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V Unit Min. ID = 5A, V GS = 4V ID = 5A, V GS = 10V ID = 5A, V DS = 5V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, I D = 5A, V GS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case IS = 5A, dis/dt = –50A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) 32 24 16 8 0 0 DRAIN CURRENT ID (A) 20 50 100 150 100ms 1ms 100 7 5 3 2 DC TC = 25°C Single Pulse 10ms 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) Tc = 25°C Pulse Test 8V 6V 4V 12 PD = 20W 8 3V 4 0.4 0.8 1.2 1.6 6V 10 5V VGS = 10V 0 tw = 10ms 101 7 5 3 2 10–1 7 5 200 16 0 MAXIMUM SAFE OPERATING AREA 5 3 2 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 40 8V Tc = 25°C Pulse Test 8 5V 4V VGS = 10V 6 3V 4 2.5V 2 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.2 ID = 15A 0.8 10A 0.4 5A 0 2 4 6 8 60 10V 40 20 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) Tc = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 16 8 102 7 5 4 3 VDS = 5V Pulse Test 2 TC = 25°C 75°C 101 7 5 4 3 125°C 2 0 2 4 6 8 100 0 10 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 Tch = 25°C f = 1MHZ VGS = 0V 104 7 5 3 2 103 102 7 5 3 2 80 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 24 7 5 3 2 VGS = 4V DRAIN CURRENT ID (A) 32 0 Tc = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 40 DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) 1.6 0 CAPACITANCE Ciss, Coss, Crss (pF) 100 Tc = 25°C Pulse Test Ciss Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 td(off) tf tr 101 7 5 4 3 td(on) Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) 6 VDS = 10V 4 20V 25V 2 0 4 8 12 16 24 16 8 0 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 75°C 25°C GATE CHARGE Qg (nC) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 32 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 Tch = 25°C ID = 10A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 D = 1.0 0.5 0.2 PDM 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999