ON NSS1C200LT1G Pnp transistor Datasheet

NSS1C200L, NSV1C200L
100 V, 2.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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−100 VOLTS, 2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
2
EMITTER
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
1
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−100
Vdc
Collector-Base Voltage
VCBO
−140
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
IC
−2.0
A
ICM
−3.0
A
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
490
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
255
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
176
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Rating
Collector Current − Continuous
Collector Current − Peak
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
VL MG
G
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2007
October, 2016 − Rev. 6
1
1
VL = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS1C200LT1G,
NSV1C200LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C200L/D
NSS1C200L, NSV1C200L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −140 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
−100
Vdc
−140
Vdc
−7.0
nAdc
−100
nAdc
−50
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
150
120
80
50
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.01 A)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.100 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
240
360
V
−0.040
−0.080
−0.115
−0.250
V
−0.950
V
−0.850
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz)
Cibo
200
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
22
pF
120
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
PD, POWER DISSIPATION (W)
0.60
0.50
Note 2
0.40
0.30
Note 1
0.20
0.10
0
0
20
40
60
80
100
120
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
NSS1C200L, NSV1C200L
500
500
VCE = 2 V
150°C
25°C
200
−55°C
100
0.01
0.1
1
25°C
200
−55°C
100
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
Figure 3. DC Current Gain
1
0.1
150°C
25°C
−55°C
0.01
0.001
300
0
0.001
10
0.01
0.1
IC/IB = 10
1
10
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
0
0.001
VBE(sat), BASE−EMITTER VOLTAGE (V)
DC, CURRENT GAIN
300
400
10
1
150°C
0.1
25°C
−55°C
0.01
0.001
IC/IB = 50
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
Figure 5. Collector−Emitter Saturation Voltage
1.2
1.0
VBE(sat), BASE−EMITTER VOLTAGE (V)
DC, CURRENT GAIN
400
VCE = 4 V
150°C
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
IC/IB = 10
0.01
0.1
1
10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
IC/IB = 50
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
Figure 7. Base−Emitter Saturation Voltage
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3
10
VBE(on), BASE−EMITTER VOLTAGE (V)
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
VCE = 2 V
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
NSS1C200L, NSV1C200L
1.00
TJ = 25°C
3A
1A
0.10
0.5 A
IC = 0.1 A
0.01
1.0E−04
1.0E−02
1.0E−01
1.0E+00
Figure 9. Collector Saturation Region
400
80
COBO, OUTPUT CAPACITANCE (pF)
TJ = 25°C
fTEST = 1 MHz
300
200
100
0
0
1
2
3
4
5
6
7
8
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
100
10
TJ = 25°C
fTEST = 1 MHz
VCE = 10 V
10 ms
100
80
60
40
20
0
0.001
60
Figure 10. Input Capacitance
140
120
TJ = 25°C
fTEST = 1 MHz
70
VCE, EMITTER BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
CIBO, INPUT CAPACITANCE (pF)
1.0E−03
IB, BASE CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
fTau, CURRENT−GAIN BANDWIDTH PRODUCT
(MHz)
2A
0.01
0.1
IC, COLLECTOR CURRENT (A)
1
1 ms
1
100 ms
Thermal Limit
0.1
0.01
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13.
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4
100
NSS1C200L, NSV1C200L
1000
D = 0.5
R(t), (°C/W)
100
D = 0.2
D = 0.1
D = 0.05
10
D = 0.02
D = 0.01
1
0.1
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 14. Transient Thermal Resistnce
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5
1.0
10
100
1000
NSS1C200L, NSV1C200L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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