Fairchild FQH18N50V2 500v n-channel mosfet Datasheet

®
FQH18N50V2
500V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
•
•
•
•
•
•
20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
Low gate charge ( typical 42 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
"
! "
"
"
G!
TO-247
G D
S
Absolute Maximum Ratings
Symbol
VDSS
ID
!
FQH Series
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQH18N50V2
500
Units
V
20
A
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
12.7
A
80
A
± 30
V
330
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
20
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
27.7
4.5
277
2.22
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2003 Fairchild Semiconductor Corporation
Max
0.45
Units
°C/W
0.24
--
°C/W
--
40
°C/W
Rev. A, December 2003
FQH18N50V2
QFET
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
500
--
--
V
--
0.5
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = 500 V, VGS = 0 V
--
--
1
µA
VDS = 400 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
0.225
0.265
Ω
--
16
--
S
--
2530
3290
pF
--
300
390
pF
--
11
14.3
pF
--
76
--
pF
--
150
--
pF
ns
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 10 A
gFS
Forward Transconductance
VDS = 40 V, ID = 10 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 400 V, VGS = 0 V,
f = 1.0 MHz
VDS = 0V to 400 V, VGS = 0 V
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 18 A,
RG = 25 Ω
(Note 4, 5)
VDS = 400 V, ID = 18 A,
VGS = 10 V
(Note 4, 5)
--
40
90
--
150
310
ns
--
95
200
ns
--
110
230
ns
--
42
55
nC
--
12
--
nC
--
14
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
20
ISM
--
--
80
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 20 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
420
--
ns
Qrr
Reverse Recovery Charge
--
5.4
--
µC
VGS = 0 V, IS = 18 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.5mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQH18N50V2
Electrical Characteristics
FQH18N50V2
Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
1
1
7.0 V
ID , Drain Current [A]
ID, Drain Current [A]
10
6.5 V
6.0 V
Bottom :
10
5.5 V
0
※ Notes :
10
150℃
25℃
-55℃
0
10
※ Notes :
1. 250μ s Pulse Test
1. VDS = 40V
2. TC = 25℃
10
2. 250μ s Pulse Test
-1
-1
10
-1
10
0
10
10
1
2
4
VDS, Drain-Source Voltage [V]
6
8
10
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
IDR , Reverse Drain Current [A]
R DS(ON) [Ω ],
Drain-Source On-Resistance
1.0
0.8
0.6
VGS = 10V
0.4
V GS = 20V
0.2
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃
2. 250μ s Pulse Test
-1
0.0
0
10
20
30
40
50
60
10
70
0.2
0.4
0.6
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
7000
12
C iss = C gs + Cgd (Cds = shorted)
VDS = 100V
C oss = Cds + Cgd
6000
10
4000
3000
Ciss
Coss
2000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
0
-1
10
V GS , Gate-Source Voltage [V]
C rss = C gd
5000
Capacitance [pF]
0.8
ID, Drain Current [A]
VDS = 250V
VDS = 400V
8
6
4
2
※ Note : ID = 18A
0
10
0
10
1
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, December 2003
(Continued)
3.0
R DS(ON) , (Normalized)
1.1
1.0
※ Notes :
0.9
1. VGS = 0 V
2. ID = 250 μ A
Drain-Source On-Resistance
1.2
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
FQH18N50V2
Typical Characteristics
2.5
2.0
1.5
1.0
※ Notes :
0.5
1. VGS = 10 V
2. ID = 10 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
20
Operation in This Area
is Limited by R
10
DS(on)
2
ID, Drain Current [A]
ID , Drain Current [A]
15
100 us
1 ms
10
1
10 ms
DC
10
※ Notes :
0
10
5
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
10
0
25
-1
10
0
10
1
10
2
10
3
50
75
Figure 9.. Maximum Safe Operating Area
Zθ
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
10
-1
※ N o te s :
0 .2
1. Zθ
JC
( t ) = 0 .4 5 ℃ /W M a x .
2 . D u t y F a c to r , D = t 1 /t 2
0 .1
3 . T JM - T C = P DM * Z θ
JC
(t)
0 .0 5
JC
( t) , T h e r m a l R e s p o n s e
10
100
TC, Case Temperature [℃]
VDS , Drain-Source Voltage [V]
10
PDM
0 .0 2
0 .0 1
-2
t1
t2
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u l s e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQH18N50V2
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2003 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. A, December 2003
FQH18N50V2
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQH18N50V2
Package Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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The datasheet is printed for reference information only.
Rev. I6
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