Freescale MRF6S9060N Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S9060N
Rev. 4, 8/2008
RF Power Field Effect Transistors
MRF6S9060NR1
MRF6S9060NBR1
N - Channel Enhancement - Mode Lateral MOSFETs
LIFETIME BUY
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9060NR1
CASE 1337 - 04, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, + 12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
MRF6S9060NR1 MRF6S9060NBR1
1
Table 2. Thermal Characteristics
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 80°C, 14 W CW
RθJC
Unit
°C/W
0.77
0.88
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
LIFETIME BUY
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test)
VGS(Q)
—
2.9
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
—
0.18
0.4
Vdc
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
33
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.4
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
106
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
Gps
20.5
21.4
23.5
dB
Drain Efficiency
ηD
30.5
32.1
—
%
ACPR
—
- 47.6
- 45
dBc
IRL
—
- 15.3
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
Characteristic
(continued)
MRF6S9060NR1 MRF6S9060NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 ohm system)
VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 ohm system) VDD = 28 Vdc,
IDQ = 500 mA, Pout = 60 W, f = 921 - 960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
63
—
%
IRL
—
- 12
—
dB
P1dB
—
67
—
W
LIFETIME BUY
Input Return Loss
Pout @ 1 dB Compression Point
(f = 940 MHz)
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
Characteristic
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
3
B2
R1
VBIAS
+
+
C9
RF
INPUT
C15
R3
R2
C7
C8
Z2
Z3
Z4
Z5
L1
Z6
Z7
Z8
+
+
C16
C17
C19
Z11
Z12
Z13
C10
C12
C13
VSUPPLY
C18
RF
Z15 OUTPUT
Z14
C6 Z9
C1
C14
DUT
C2
LIFETIME BUY
+
C11 L2
Z10
Z1
R4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.215″
0.221″
0.500″
0.460″
0.040″
0.280″
0.087″
0.435″
x 0.065″
x 0.065″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.525″
x 0.525″
C3
C4
C5
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.530″ Taper
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.057″ x 0.525″ Microstrip
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.170″ x 0.065″ Microstrip
0.880″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
Taconic RF - 35 0.030″, εr = 3.5
Figure 1. MRF6S9060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S9060NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair - Rite
B2
Ferrite Bead
2743021447
Fair - Rite
C1, C8, C14, C15
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C4, C13
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27290
Johanson
C3
3.0 pF Chip Capacitor
ATC100B3R0JT500XT
ATC
C5, C6
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C7, C16, C17
10 μF, 35 V Tantalum Capacitors
T491D106K035AT
Kemet
C9
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB - 1017 - RH
Multicomp
C10, C11
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C12
3.9 pF Chip Capacitor
ATC100B3R9JT500XT
ATC
C18
0.56 μF Chip Capacitor
ATC700A561MT150XT
ATC
C19
470 μF, 63 V Electrolytic Capacitor
477KXM063M
Illinois Capacitor
L1, L2
12.5 nH Inductor
A04T - 5
Coilcraft
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3
12 Ω, 1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
R4
27 W, 1/4 W Chip Resistor
CRCW120627R0FKEA
Vishay
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
B1
MRF6S9060NR1 MRF6S9060NBR1
4
RF Device Data
Freescale Semiconductor
VGG
R2
R1
C19
B1
R3
C8
C15
C9
C2
C3
C5
R4
C18
L2
CUT OUT AREA
C6
L1
C1
VDD
C16 C17
B2
C11
C10
C12
C13
C14
LIFETIME BUY
C4
TO−270/272
Surface /
Bolt down
Figure 2. MRF6S9060NR1(NBR1) Test Circuit Component Layout
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
C7
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
5
35
ηD
30
21.6
Gps
−45
ACPR
21.2
−50
IRL
21
−55
−60
20.8
ALT1
−65
920
20.6
840
850
860
870
880
890
900
910
−8
ACPR (dBc), ALT1 (dBc)
21.4
−12
−16
−20
−24
48
ηD
46
44
21
20.8
−32
ACPR
20.6
−40
20.4
IRL
−48
ALT1
20
840
850
860
870
880
890
900
910
−56
−64
920
ACPR (dBc), ALT1 (dBc)
Gps
−4
−8
−12
−16
−20
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 450 mA
21.4 N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
21.2
20.2
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg.
23
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
IDQ = 675 mA
22
Gps, POWER GAIN (dB)
50
21.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg.
Gps, POWER GAIN (dB)
LIFETIME BUY
f, FREQUENCY (MHz)
550 mA
450 mA
21
350 mA
20
225 mA
19
18
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30
IDQ = 225 mA
−40
350 mA
−50
450 mA
550 mA
675 mA
−60
17
1
10
100
300
1
10
100
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
21.8
Gps, POWER GAIN (dB)
40
VDD = 28 Vdc, Pout = 14 W (Avg.), IDQ = 450 mA
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
IRL, INPUT RETURN LOSS (dB)
22
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9060NR1 MRF6S9060NBR1
6
RF Device Data
Freescale Semiconductor
−30
−40
3rd Order
−60
5th Order
−70
7th Order
−80
10
100
300
VDD = 28 Vdc, Pout = 60 W (PEP)
IDQ = 450 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−10
−20
−30
3rd Order
−40
5th Order
−50
−60
7th Order
−70
0.05 0.1
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
56
55
54
Ideal
P3dB = 50 dBm (150 W)
53
52
51
50
49
P1dB = 49.1 dBm (100 W)
Actual
48
47
VDD = 28 Vdc, IDQ = 450 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
46
45
44
22
23
24
25
26
27
28
29
30
31
32
33
34
Pin, INPUT POWER (dBm)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
55
−25
ηD
VDD = 28 Vdc, IDQ = 450 mA
f = 880 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
45
ALT1
85_C
−45
−30_C
25_C
ACPR
−55
35
25
Gps
15
TC = 25_C
−35
25_C
85_C
−65
−30_C
25_C
5
−5
−75
−85
1
10
Pout, OUTPUT POWER (WATTS) AVG.
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
−50
0
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
VDD = 28 Vdc, IDQ = 450 mA, f1 = 880 MHz
−20 f2 = 880.1 MHz, Two−Tone Measurements
1
LIFETIME BUY
IMD, INTERMODULATION DISTORTION (dBc)
−10
Pout, OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
22
25_C
25_C
60
85_C
50
20.5
85_C
20
40
19.5
30
19
20
ηD
18.5
VDD = 28 Vdc
IDQ = 450 mA
f = 880 MHz
18
1
10
0
10
100
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
22
21
20
19
18
17
28 V
32 V
VDD = 24 V
16
15
14
13
12
11
10
IDQ = 450 mA
f = 880 MHz
0
10
20 30 40 50 60
70 80 90 100 110 120 130 140
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
108
MTTF (HOURS)
LIFETIME BUY
Pout, OUTPUT POWER (WATTS) CW
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 32.1%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
21
70
Gps
ηD, DRAIN EFFICIENCY (%)
TC = −30_C
21.5
Gps, POWER GAIN (dB)
80
−30_C
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9060NR1 MRF6S9060NBR1
8
RF Device Data
Freescale Semiconductor
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
...
.
..
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
.
..
.
Integrated BW
Integrated BW
..................
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... −ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
......
...........
......
...
..........
...........
−100
LIFETIME BUY
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
3.6
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
N - CDMA TEST SIGNAL
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
9
f = 910 MHz
f = 910 MHz
Zload
Zsource
f = 850 MHz
f = 850 MHz
VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.44 - j0.20
2.28 + j0.23
865
0.44 - j0.07
2.18 + j0.33
880
0.45 + j0.50
2.20 + j0.47
895
0.48 + j0.18
2.15 + j0.61
910
0.52 + j0.29
2.00 + j0.68
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
LIFETIME BUY
Zo = 5 Ω
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9060NR1 MRF6S9060NBR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
11
MRF6S9060NR1 MRF6S9060NBR1
12
RF Device Data
Freescale Semiconductor
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
13
MRF6S9060NR1 MRF6S9060NBR1
14
RF Device Data
Freescale Semiconductor
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
15
MRF6S9060NR1 MRF6S9060NBR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
4
Aug. 2008
Description
• Listed replacement part and Device Migration notification reference number, p. 1
• Listed MRF6S9060NBR1 as no longer manufactured, p. 1
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 11 - 13. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Replaced Case Outline 1337 - 03 with 1337 - 04, p. 1, 14 - 16. Issue D: Removed Drain - ID label from View
Y - Y on Sheet 2. Renamed E2 to E3. Added cross - hatch region dimensions D2 and E2. Added JEDEC
Standard Package Number. Issue E: Corrected document number 98ASA99191D on Sheet 3.
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
• Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 8
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
• Added Product Documentation and Revision History, p. 17
MRF6S9060NR1 MRF6S9060NBR1
RF Device Data
Freescale Semiconductor
17
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MRF6S9060NR1 MRF6S9060NBR1
Document Number: MRF6S9060N
Rev. 4, 8/2008
18
RF Device Data
Freescale Semiconductor
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